Tim Veal

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	همهٔ موارد	از 2019
نقل‌‏قول‌‏ها	10819	4476
شاخص h	61	38
شاخص i10	144	96

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نویسندگان مشترک

Chris McConvillePro Vice-Chancellor Research, Deakin Universityایمیل تأیید شده در warwick.ac.uk
Phil D C KingSchool of Physics and Astronomy, University of St Andrewsایمیل تأیید شده در st-andrews.ac.uk
Louis PiperProfessor of Battery Innovationایمیل تأیید شده در warwick.ac.uk
Wojciech M. LinhartWroclaw University of Science and Technologyایمیل تأیید شده در pwr.edu.pl
David ScanlonChair in Computational Chemistry at University of Birminghamایمیل تأیید شده در bham.ac.uk
Paul JeffersonUniversity of Warwickایمیل تأیید شده در alumni.warwick.ac.uk
V.R.DhanakPhysics Department, University of Liverpoolایمیل تأیید شده در liverpool.ac.uk
Leanne A. H. JonesUniversity of Oxfordایمیل تأیید شده در materials.ox.ac.uk
Ken DuroseDepartment of Physics, University of Liverpoolایمیل تأیید شده در liverpool.ac.uk
Imran MahboobNTT Basic Research Labsایمیل تأیید شده در lab.ntt.co.jp
Steven M. DurbinUniversity of Hawaii at Manoaایمیل تأیید شده در hawaii.edu
Max BirkettResearch Associate, Stephenson Institute for Renewable Energy, University of Liverpoolایمیل تأیید شده در liv.ac.uk
Jonathan MajorEPSRC Research Fellowایمیل تأیید شده در liverpool.ac.uk
Mohana RajpalkeSenior Researcher at Microsoft, Copenhagenایمیل تأیید شده در microsoft.com
Pardeep K. ThakurStaff Scientist, Diamond Light Sourceایمیل تأیید شده در diamond.ac.uk
Laurie PhillipsDepartment of Physics, University of Liverpoolایمیل تأیید شده در liverpool.ac.uk
Zuniga-Perez JMajulab/CRHEA, CNRS-NTU, School of Physical and Mathematical Sciences, 21 Nanyang Link, SINGAPOREایمیل تأیید شده در crhea.cnrs.fr
Matthew SmilesPhD Student of Physics, University of Liverpoolایمیل تأیید شده در liverpool.ac.uk
Friedhelm BechstedtProfessor für Festkörpertheorie, Friedrich Schiller Universität Jenaایمیل تأیید شده در ifto.physik.uni-jena.de
Thomas J FeatherstonePhD student, University of Liverpoolایمیل تأیید شده در liverpool.ac.uk

دنبال کردن

Tim Veal

Professor of Materials Physics, Stephenson Inst. for Ren. Energy and Physics, Univ. of Liverpool

ایمیل تأیید شده در liverpool.ac.uk - صفحهٔ اصلی

Semiconductors Photovoltaics Solar Energy Materials Nitrides Transparent Conducting Oxides


عنوان به‌ترتیب نقل قول‌ها به‌ترتیب سال به‌ترتیب عنوان	نقل شده توسط نقل شده توسط	سال
Intrinsic electron accumulation at clean InN surfaces‏ I Mahboob, TD Veal, CF McConville, H Lu, WJ Schaff‏ Physical review letters 92 (3), 036804, 2004‏	600	2004
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral ‏ PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ...‏ Physical Review B—Condensed Matter and Materials Physics 79 (20), 205211, 2009‏	539	2009
Conductivity in transparent oxide semiconductors‏ PDC King, TD Veal‏ Journal of Physics: Condensed Matter 23 (33), 334214, 2011‏	350	2011
Electronic and optical properties of single crystal SnS 2: an earth-abundant disulfide photocatalyst‏ LA Burton, TJ Whittles, D Hesp, WM Linhart, JM Skelton, B Hou, ...‏ Journal of Materials Chemistry A 4 (4), 1312-1318, 2016‏	321	2016
Surface Electron Accumulation and the Charge Neutrality Level in ‏ PDC King, TD Veal, DJ Payne, A Bourlange, RG Egdell, CF McConville‏ Physical review letters 101 (11), 116808, 2008‏	312	2008
Origin of electron accumulation at wurtzite InN surfaces‏ I Mahboob, TD Veal, LFJ Piper, CF McConville, H Lu, WJ Schaff, ...‏ Physical Review B 69 (20), 201307, 2004‏	247	2004
Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS₂, and Sn₂S₃: Experiment and Theory‏ TJ Whittles, LA Burton, JM Skelton, A Walsh, TD Veal, VR Dhanak‏ Chemistry of Materials 28 (11), 3718-3726, 2016‏	233	2016
Bandgap and effective mass of epitaxial cadmium oxide‏ PH Jefferson, SA Hatfield, TD Veal, PDC King, CF McConville, ...‏ Applied physics letters 92 (2), 2008‏	220	2008
Origin of the n-type conductivity of InN: The role of positively charged dislocations‏ LFJ Piper, TD Veal, CF McConville, H Lu, WJ Schaff‏ Applied physics letters 88 (25), 2006‏	188	2006
Shallow donor state of hydrogen in and : Implications for conductivity in transparent conducting oxides‏ PDC King, RL Lichti, YG Celebi, JM Gil, RC Vilão, HV Alberto, ...‏ Physical Review B—Condensed Matter and Materials Physics 80 (8), 081201, 2009‏	185	2009
Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations‏ PDC King, TD Veal, A Schleife, J Zúñiga-Pérez, B Martel, PH Jefferson, ...‏ Physical Review B 79 (20), 205205, 2009‏	179	2009
InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements‏ PDC King, TD Veal, CE Kendrick, LR Bailey, SM Durbin, CF McConville‏ Physical Review B—Condensed Matter and Materials Physics 78 (3), 033308, 2008‏	164	2008
Growth, disorder, and physical properties of ZnSnN2‏ N Feldberg, JD Aldous, WM Linhart, LJ Phillips, K Durose, PA Stampe, ...‏ Applied Physics Letters 103 (4), 2013‏	151	2013
Bulk transport measurements in ZnO: The effect of surface electron layers‏ MW Allen, CH Swartz, TH Myers, TD Veal, CF McConville, SM Durbin‏ Physical Review B—Condensed Matter and Materials Physics 81 (7), 075211, 2010‏	146	2010
Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors‏ PDC King, TD Veal, PH Jefferson, SA Hatfield, LFJ Piper, CF McConville, ...‏ Physical Review B—Condensed Matter and Materials Physics 77 (4), 045316, 2008‏	143	2008
Universality of electron accumulation at wurtzite c-and a-plane and zinc-blende InN surfaces‏ PDC King, TD Veal, CF McConville, F Fuchs, J Furthmüller, F Bechstedt, ...‏ Applied Physics Letters 91 (9), 2007‏	143	2007
Quantized Electron Accumulation States in Indium Nitride Studied<? format?> by Angle-Resolved Photoemission Spectroscopy‏ L Colakerol, TD Veal, HK Jeong, L Plucinski, A DeMasi, T Learmonth, ...‏ Physical review letters 97 (23), 237601, 2006‏	137	2006
Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber‏ TD Veal, N Feldberg, NF Quackenbush, WM Linhart, DO Scanlon, ...‏ Advanced Energy Materials 5 (24), 201501462, 2015‏	129	2015
Self‐Compensation in Transparent Conducting F‐Doped SnO₂‏ JEN Swallow, BAD Williamson, TJ Whittles, M Birkett, TJ Featherstone, ...‏ Advanced Functional Materials 28 (4), 1701900, 2018‏	126	2018
Surface band-gap narrowing in quantized electron accumulation layers‏ PDC King, TD Veal, CF McConville, J Zúñiga-Pérez, V Muñoz-Sanjosé, ...‏ Physical Review Letters 104 (25), 256803, 2010‏	121	2010

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