مقاله‌های دارای تعهدات انتشار عمومی - Tarek T. Aliبیشتر بدانید
جای دیگری دردسترس نیست: ۱۱
مرور
Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices‏
F Ali, T Ali, D Lehninger, A Sünbül, A Viegas, R Sachdeva, A Abbas, ...‏
Advanced Functional Materials 32 (27), 2201737, 2022‏
تعهدات: European Commission‏
مرور
Optimizing ferroelectric and interface layers in HZO-based FTJs for neuromorphic applications‏
A Sünbül, T Ali, K Mertens, R Revello, D Lehninger, F Müller, M Lederer, ...‏
IEEE Transactions on Electron Devices 69 (2), 808-815, 2021‏
تعهدات: European Commission‏
مرور
Integration of BEoL compatible 1T1C FeFET memory into an established CMOS technology‏
D Lehninger, H Mähne, T Ali, R Hoffmann, R Olivo, M Lederer, K Mertens, ...‏
2022 IEEE International Memory Workshop (IMW), 1-4, 2022‏
تعهدات: European Commission‏
مرور
Impact of stack structure control and ferroelectric material optimization in novel laminate HSO and HZO MFMIS FeFET‏
T Ali, K Mertens, R Olivo, D Lehninger, M Lederer, F Müller, M Rudolph, ...‏
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022‏
تعهدات: European Commission‏
مرور
Influence of microstructure on the variability and current percolation paths in ferroelectric hafnium oxide based neuromorphic FeFET synapses‏
M Lederer, F Muller, A Varanasi, R Olivo, K Mertens, D Lehninger, ...‏
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021‏
تعهدات: European Commission‏
مرور
Impact of the ferroelectric and interface layer optimization in an MFIS HZO based ferroelectric tunnel junction for neuromorphic based synaptic storage‏
T Ali, A Sünbül, K Mertens, R Revello, M Lederer, D Lehninger, F Müller, ...‏
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021‏
تعهدات: European Commission‏
مرور
Endurance study of silicon-doped hafnium oxide (HSO) and zirconium-doped hafnium oxide (HZO)-based FeFET memory‏
P Duhan, T Ali, P Khedgarkar, K Kühnel, M Czernohorsky, M Rudolph, ...‏
IEEE Transactions on Electron Devices 70 (11), 5645-5650, 2023‏
تعهدات: European Commission‏
مرور
Multi-level operation of ferroelectric fet memory arrays for compute-in-memory applications‏
F Müller, S De, M Lederer, R Hoffmann, R Olivo, T Kämpfe, K Seidel, T Ali, ...‏
2023 IEEE International Memory Workshop (IMW), 1-4, 2023‏
تعهدات: European Commission‏
مرور
Microstructural implications for neuromorphic synapses based on ferroelectric hafnium oxide‏
F Muller, M Lederer, R Olivo, A Reck, T Ali, K Seidel, T Kämpfe‏
2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF), 1-4, 2021‏
تعهدات: European Commission‏
مرور
Impact of temperature on reliability of mfis hzo-based ferroelectric tunnel junctions‏
A Sünbül, T Ali, R Hoffmann, R Revello, Y Raffel, P Duhan, D Lehninger, ...‏
2022 IEEE International Reliability Physics Symposium (IRPS), P11-1-P11-5, 2022‏
تعهدات: European Commission‏
مرور
Integration of hafnium oxide-based ferroelectric data storage devices into BEoL for low-power applications‏
K Seidel, D Lehninger, R Olivo, T Ali, M Lederer, T Kaempfe, K Mertens, ...‏
MikroSystemTechnik Congress 2021; Congress, 1-4, 2021‏
تعهدات: Federal Ministry of Education and Research, Germany‏
جای دیگری دردسترس است: ۲۱
مرور
Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD‏
M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ...‏
Applied Physics Letters 115 (22), 2019‏
تعهدات: European Commission‏
مرور
Back‐end‐of‐line compatible low‐temperature furnace anneal for ferroelectric hafnium zirconium oxide formation‏
D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, C Mart, K Biedermann, ...‏
physica status solidi (a) 217 (8), 1900840, 2020‏
تعهدات: European Commission‏
مرور
Ultra-low power flexible precision FeFET based analog in-memory computing‏
T Soliman, F Müller, T Kirchner, T Hoffmann, H Ganem, E Karimov, T Ali, ...‏
2020 IEEE International Electron Devices Meeting (IEDM), 29.2. 1-29.2. 4, 2020‏
تعهدات: European Commission‏
مرور
Ferroelectric field effect transistors as a synapse for neuromorphic application‏
M Lederer, T Kämpfe, T Ali, F Müller, R Olivo, R Hoffmann, N Laleni, ...‏
IEEE Transactions on Electron Devices 68 (5), 2295-2300, 2021‏
تعهدات: European Commission‏
مرور
Structural and electrical comparison of Si and Zr doped hafnium oxide thin films and integrated FeFETs utilizing transmission Kikuchi diffraction‏
M Lederer, T Kämpfe, N Vogel, D Utess, B Volkmann, T Ali, R Olivo, ...‏
Nanomaterials 10 (2), 384, 2020‏
تعهدات: European Commission‏
مرور
A fully integrated ferroelectric thin‐film‐transistor–influence of device scaling on threshold voltage compensation in displays‏
D Lehninger, M Ellinger, T Ali, S Li, K Mertens, M Lederer, R Olivio, ...‏
Advanced Electronic Materials 7 (6), 2100082, 2021‏
تعهدات: German Research Foundation, Fraunhofer-Gesellschaft‏
مرور
Read-optimized 28nm hkmg multibit fefet synapses for inference-engine applications‏
S De, F Müller, HH Le, M Lederer, Y Raffel, T Ali, D Lu, T Kämpfe‏
IEEE Journal of the Electron Devices Society 10, 637-641, 2022‏
تعهدات: European Commission‏
مرور
Review on the microstructure of ferroelectric hafnium oxides‏
M Lederer, D Lehninger, T Ali, T Kämpfe‏
physica status solidi (RRL)–Rapid Research Letters 16 (10), 2200168, 2022‏
تعهدات: European Commission‏
مرور
Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability‏
D Lehninger, A Prabhu, A Sünbül, T Ali, F Schöne, T Kämpfe, ...‏
Advanced Physics Research 2 (9), 2200108, 2023‏
تعهدات: European Commission‏
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