| Emerging low-power semiconductor devices: Applications for future technology nodes S Tayal, AK Upadhyay, D Kumar, SB Rahi CRC Press, 2022 | 44 | 2022 |
| 10 nm Trigate high k underlap finFETs: scaling effects and analog performance JKK Bha, PA Priya, HB Joseph, DJ Thiruvadigal Silicon 12, 2111-2119, 2020 | 27 | 2020 |
| Hetero structure PNPN tunnel FET: analysis of scaling effects on counter doping HB Joseph, SK Singh, RM Hariharan, PA Priya, NM Kumar, ... Applied Surface Science 449, 823-828, 2018 | 17 | 2018 |
| Performance investigation of solar still integrated to solar pond MI Ali, J Bijo, R Karthikeyan, R Yuvaraj Bonfring International Journal of Power Systems and Integrated Circuits 2 (1), 1, 2012 | 14 | 2012 |
| Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance SK Singh, RK Kakkerla, HB Joseph, A Gupta, D Anandan, V Nagarajan, ... Materials Science in Semiconductor Processing 101, 247-252, 2019 | 12 | 2019 |
| Characterization and optimization of MIS-HEMTs device of high~ k dielectric material on quaternary barrier of Al0. 42ln0. 03Ga0. 55N/UID-AIN/GaN/GaN heterostructure for high … YU Tarauni, DJ Thiruvadigal, HB Joseph Applied Surface Science 488, 427-433, 2019 | 12 | 2019 |
| Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap HB Joseph, SK Singh, RM Hariharan, Y Tarauni, DJ Thiruvadigal Materials Science in Semiconductor Processing 103, 104605, 2019 | 10 | 2019 |
| Optimization of enhancement mode P-type Mg-doped In0. 2Ga0. 8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits YU Tarauni, DJ Thiruvadigal, B Joseph, A Mohanbabu Materials Science in Semiconductor Processing 103, 104624, 2019 | 7 | 2019 |
| Gated single molecular device and logic gate design RM Hariharan, C Preferencial Kala, K Janani, H Bijo Joseph, ... Electronics Letters 53 (1), 46-48, 2017 | 3 | 2017 |
| Spin-dependent electron transport analysis of benzyl alcohol and p-cresol based single molecular junction: a DFT-NEGF approach A Arivazhagan, JM Jasmine, H Rajalakshmi Mohanraj, KJ Sivasankar, ... Journal of Materials Science: Materials in Electronics 33 (12), 9490-9497, 2022 | 1 | 2022 |
| Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET HB Joseph, SK Singh, V Nagarajan, D Anandan, EY Chang, RK Kakkerla, ... ECS Journal of Solid State Science and Technology 10 (6), 061004, 2021 | 1 | 2021 |