دنبال کردن
Giovanni Ghione
Giovanni Ghione
Professore ordinario di elettronica, Politecnico di Torino
ایمیل تأیید شده در polito.it
عنوان
نقل شده توسط
نقل شده توسط
سال
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries‏
M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ...‏
IEEE Transactions on electron devices 48 (3), 535-542, 2001‏
6042001
Coplanar waveguides for MMIC applications: Effect of upper shielding, conductor backing, finite-extent ground planes, and line-to-line coupling‏
G Ghione, CU Naldi‏
IEEE transactions on Microwave Theory and Techniques 35 (3), 260-267, 1987‏
4891987
Analytical formulas for coplanar lines in hybrid and monolithic MICs‏
G Ghione, C Naldi‏
Electronics letters 20 (4), 179-181, 1984‏
2761984
Semiconductor devices for high-speed optoelectronics‏
G Ghione‏
Cambridge University Press, 2009‏
2752009
Noise in semiconductor devices‏
F Bonani, G Ghione, F Bonani, G Ghione‏
Noise in Semiconductor Devices: Modeling and Simulation, 1-38, 2001‏
2142001
3–3.6-GHz wideband GaN Doherty power amplifier exploiting output compensation stages‏
JM Rubio, J Fang, V Camarchia, R Quaglia, M Pirola, G Ghione‏
IEEE Transactions on Microwave Theory and Techniques 60 (8), 2543-2548, 2012‏
1842012
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN‏
M Goano, E Bellotti, E Ghillino, G Ghione, KF Brennan‏
Journal of Applied Physics 88 (11), 6467-6475, 2000‏
1802000
Parameters of coplanar waveguides with lower ground plane‏
G Ghione, C Naldi‏
Electronics Letters 19 (18), 734-735, 1983‏
1771983
An efficient approach to noise analysis through multidimensional physics-based models‏
F Bonani, G Ghione, MR Pinto, RK Smith‏
IEEE Transactions on Electron Devices 45 (1), 261-269, 1998‏
1741998
A CAD-oriented analytical model for the losses of general asymmetric coplanar lines in hybrid and monolithic MICs‏
G Ghione‏
IEEE Transactions on Microwave Theory and Techniques 41 (9), 1499-1510, 1993‏
1741993
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes‏
M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ...‏
physica status solidi (a) 212 (5), 947-953, 2015‏
1272015
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys and ‏
M Goano, E Bellotti, E Ghillino, C Garetto, G Ghione, KF Brennan‏
Journal of Applied Physics 88 (11), 6476-6482, 2000‏
1262000
On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal …‏
F Bonani, G Ghione‏
Solid-State Electronics 38 (7), 1409-1412, 1995‏
1141995
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation‏
F Bonani, SD Guerrieri, G Ghione, M Pirola‏
IEEE Transactions on Electron Devices 48 (5), 966-977, 2001‏
842001
Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations‏
F Bonani, G Ghione‏
Solid-State Electronics 43 (2), 285-295, 1999‏
821999
Physics-based electron device modelling and computer-aided MMIC design‏
F Filicori, G Ghione, CU Naldi‏
IEEE Transactions on Microwave Theory and Techniques 40 (7), 1333-1352, 1992‏
781992
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated lithium niobate substrates for electrooptical applications‏
G Ghione, M Goano, GL Madonna, G Omegna, M Pirola, S Bosso, ...‏
IEEE Transactions on microwave theory and techniques 47 (12), 2287-2293, 1999‏
761999
A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices‏
G Ghione, F Filicori‏
IEEE transactions on computer-aided design of integrated circuits and …, 1993‏
681993
Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: considerations on ink composition, nanoparticle size distribution and …‏
A Chiolerio, M Cotto, P Pandolfi, P Martino, V Camarchia, M Pirola, ...‏
Microelectronic Engineering 97, 8-15, 2012‏
672012
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study‏
F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti‏
Applied Physics Letters 103 (8), 2013‏
652013
سیستم در حال حاضر قادر به انجام عملکرد نیست. بعداً دوباره امتحان کنید.
مقاله‌ها 1–20