| The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0. 53Ga0. 47As metal-oxide-semiconductor … HD Trinh, EY Chang, PW Wu, YY Wong, CT Chang, YF Hsieh, CC Yu, ... Applied Physics Letters 97 (4), 2010 | 131 | 2010 |
| Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage CT Chang, TH Hsu, EY Chang, YC Chen, HD Trinh, KJ Chen Electronics letters 46 (18), 1280-1281, 2010 | 58 | 2010 |
| Fabrication and characterization of n-In0. 4Ga0. 6N/p-Si solar cell BT Tran, EY Chang, HD Trinh, CT Lee, KC Sahoo, KL Lin, MC Huang, ... Solar Energy Materials and Solar Cells 102, 208-211, 2012 | 54 | 2012 |
| Oxide film scheme for RRAM structure TH Dang, HL Lin, CY Tsai, CS Tsai, RL Lee US Patent 9,431,609, 2016 | 48 | 2016 |
| Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer QH Luc, EY Chang, HD Trinh, YC Lin, HQ Nguyen, YY Wong, HB Do, ... IEEE Transactions on electron devices 61 (8), 2774-2778, 2014 | 47 | 2014 |
| High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate SH Tang, EY Chang, M Hudait, JS Maa, CW Liu, GL Luo, HD Trinh, YH Su Applied Physics Letters 98 (16), 2011 | 45 | 2011 |
| Effects of wet chemical and trimethyl aluminum treatments on the interface properties in atomic layer deposition of Al2O3 on InAs HD Trinh, EY Chang, YY Wong, CC Yu, CY Chang, YC Lin, HQ Nguyen, ... Japanese Journal of Applied Physics 49 (11R), 111201, 2010 | 42 | 2010 |
| Electrical Characterization of /n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments HD Trinh, G Brammertz, EY Chang, CI Kuo, CY Lu, YC Lin, HQ Nguyen, ... IEEE electron device letters 32 (6), 752-754, 2011 | 38 | 2011 |
| Resistive random access memory (RRAM) structure HD Trinh, CS Tsai, CW Liang, CY Tsai, HL Lin, Y Chin-Chieh, WT Chu US Patent 9,647,207, 2017 | 36 | 2017 |
| High K scheme to improve retention performance of resistive random access memory (RRAM) TH Dang, HL Lin, CW Liang, CY Tsai, CS Tsai US Patent 10,193,065, 2019 | 32 | 2019 |
| Resistive ram structure and method of fabrication thereof HD Trinh, CY Tsai, HL Lin US Patent 9,978,938, 2018 | 32 | 2018 |
| Effect of postdeposition annealing temperatures on electrical characteristics of molecular-beam-deposited HfO2 on n-InAs/InGaAs metal–oxide–semiconductor capacitors HD Trinh, YC Lin, HC Wang, CH Chang, K Kakushima, H Iwai, ... Applied Physics Express 5 (2), 021104, 2012 | 29 | 2012 |
| Cap structure for trench capacitors YW Chang, HD Trinh US Patent 11,088,239, 2021 | 27 | 2021 |
| Crystalline layer for passivation of III-N surface HC Chiu, TH Dang, HL Lin, CY Tsai, CS Tsai, X Chen US Patent 9,130,026, 2015 | 27 | 2015 |
| Band alignment parameters of Al2O3/InSb metal–oxide–semiconductor structure and their modification with oxide deposition temperatures HD Trinh, MT Nguyen, YC Lin, Q Van Duong, HQ Nguyen, EY Chang Applied Physics Express 6 (6), 061202, 2013 | 27 | 2013 |
| Electrical Characteristics of MOSCAPs and the Effect of Postdeposition Annealing Temperatures HD Trinh, YC Lin, EY Chang, CT Lee, SY Wang, HQ Nguyen, YS Chiu, ... IEEE transactions on electron devices 60 (5), 1555-1560, 2013 | 20 | 2013 |
| Switching layer scheme to enhance RRAM performance HD Trinh, CY Tsai, HL Lin, WT Chu US Patent 10,164,182, 2018 | 18 | 2018 |
| Image device having multi-layered refractive layer on back surface CY Lai, MY Tsai, YL Tu, HD Trinh, CY Tsai US Patent 10,163,949, 2018 | 17 | 2018 |
| Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In0. 5Ga0. 5As and In0. 3Ga0. 7As on GaAs substrate by using metal organic chemical vapor … HQ Nguyen, EY Chang, HW Yu, HD Trinh, CF Dee, YY Wong, CH Hsu, ... Applied Physics Express 5 (5), 055503, 2012 | 17 | 2012 |
| Electrical Characterization and Materials Stability Analysis ofComposite Oxides on n-MOS Capacitors With Different Annealing Temperatures YC Lin, HD Trinh, TW Chuang, H Iwai, K Kakushima, P Ahmet, CH Lin, ... IEEE electron device letters 34 (10), 1229-1231, 2013 | 16 | 2013 |