Control of graphene's properties by reversible hydrogenation: evidence for graphane DC Elias, RR Nair, TMG Mohiuddin, SV Morozov, P Blake, MP Halsall, ... Science 323 (5914), 610-613, 2009 | 5002 | 2009 |
Investigation into the deformation of carbon nanotubes and their composites through the use of Raman spectroscopy CA Cooper, RJ Young, M Halsall Composites Part A: Applied Science and Manufacturing 32 (3-4), 401-411, 2001 | 622 | 2001 |
High-pressure Raman spectroscopy of graphene JE Proctor, E Gregoryanz, KS Novoselov, M Lotya, JN Coleman, ... Physical Review B—Condensed Matter and Materials Physics 80 (7), 073408, 2009 | 255 | 2009 |
Variations in the Raman peak shift as a function of hydrostatic pressure for various carbon nanostructures: A simple geometric effect J Sandler, MSP Shaffer, AH Windle, MP Halsall, MA Montes-Moran, ... Physical Review B 67 (3), 035417, 2003 | 167 | 2003 |
CdS/CdSe intrinsic stark superlattices MP Halsall, JE Nicholls, JJ Davies, B Cockayne, PJ Wright Journal of applied physics 71 (2), 907-915, 1992 | 80 | 1992 |
THz operation of asymmetric-nanochannel devices C Balocco, M Halsall, NQ Vinh, AM Song Journal of Physics: Condensed Matter 20 (38), 384203, 2008 | 76 | 2008 |
Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells WM Zheng, MP Halsall, P Harmer, P Harrison, MJ Steer Journal of applied physics 92 (10), 6039-6042, 2002 | 68 | 2002 |
Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN MP Halsall, P Harmer, PJ Parbrook, SJ Henley Physical Review B—Condensed Matter and Materials Physics 69 (23), 235207, 2004 | 64 | 2004 |
Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells M Vaqueiro-Contreras, VP Markevich, J Coutinho, P Santos, IF Crowe, ... Journal of Applied Physics 125 (18), 2019 | 62 | 2019 |
Effective-mass approximation and statistical description of luminescence line shape in porous silicon G Fishman, I Mihalcescu, R Romestain Physical Review B 48 (3), 1464, 1993 | 62 | 1993 |
Hydrogenation of graphene by reaction at high pressure and high temperature D Smith, RT Howie, IF Crowe, CL Simionescu, C Muryn, V Vishnyakov, ... ACS nano 9 (8), 8279-8283, 2015 | 61 | 2015 |
Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy IF Crowe, MP Halsall, O Hulko, AP Knights, RM Gwilliam, M Wojdak, ... Journal of Applied Physics 109 (8), 2011 | 60 | 2011 |
Graphene oxide films for field effect surface passivation of silicon for solar cells M Vaqueiro-Contreras, C Bartlam, RS Bonilla, VP Markevich, MP Halsall, ... Solar Energy Materials and Solar Cells 187, 189-193, 2018 | 56 | 2018 |
Excitonic and impurity-related optical transitions in Be -doped multiple quantum wells: Fractional-dimensional space approach J Kundrotas, A Čerškus, S Ašmontas, G Valušis, B Sherliker, MP Halsall, ... Physical Review B—Condensed Matter and Materials Physics 72 (23), 235322, 2005 | 50 | 2005 |
Graphene oxide integrated silicon photonics for detection of vapour phase volatile organic compounds HC Leo Tsui, O Alsalman, B Mao, A Alodhayb, H Albrithen, AP Knights, ... Scientific Reports 10 (1), 9592, 2020 | 49 | 2020 |
Towards substrate engineering of graphene–silicon Schottky diode photodetectors H Selvi, N Unsuree, E Whittaker, MP Halsall, EW Hill, A Thomas, ... Nanoscale 10 (7), 3399-3409, 2018 | 49 | 2018 |
Picosecond far-infrared studies of intra-acceptor dynamics in bulk GaAs and δ-doped AlAs/GaAs quantum wells MP Halsall, P Harrison, JPR Wells, IV Bradley, H Pellemans Physical Review B 63 (15), 155314, 2001 | 46 | 2001 |
Photoluminescence of wide bandgap II–VI superlattices KP O'Donnell, PJ Parbrook, B Henderson, C Trager-Cowan, X Chen, ... Journal of crystal growth 101 (1-4), 554-558, 1990 | 40 | 1990 |
Growth and assessment of CdS and CdSe layers produced on GaAs by metalorganic chemical vapour deposition MP Halsall, JJ Davies, JE Nicholls, B Cockayne, PJ Wright, GJ Russell Journal of crystal growth 91 (1-2), 135-140, 1988 | 38 | 1988 |
Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach J Kundrotas, A Čerškus, S Ašmontas, G Valušis, MP Halsall, ... Semiconductor science and technology 22 (9), 1070, 2007 | 37 | 2007 |