دنبال کردن
Matthew Halsall
Matthew Halsall
Professor of Photonics at The University of Manchester
ایمیل تأیید شده در manchester.ac.uk
عنوان
نقل شده توسط
نقل شده توسط
سال
Control of graphene's properties by reversible hydrogenation: evidence for graphane
DC Elias, RR Nair, TMG Mohiuddin, SV Morozov, P Blake, MP Halsall, ...
Science 323 (5914), 610-613, 2009
50022009
Investigation into the deformation of carbon nanotubes and their composites through the use of Raman spectroscopy
CA Cooper, RJ Young, M Halsall
Composites Part A: Applied Science and Manufacturing 32 (3-4), 401-411, 2001
6222001
High-pressure Raman spectroscopy of graphene
JE Proctor, E Gregoryanz, KS Novoselov, M Lotya, JN Coleman, ...
Physical Review B—Condensed Matter and Materials Physics 80 (7), 073408, 2009
2552009
Variations in the Raman peak shift as a function of hydrostatic pressure for various carbon nanostructures: A simple geometric effect
J Sandler, MSP Shaffer, AH Windle, MP Halsall, MA Montes-Moran, ...
Physical Review B 67 (3), 035417, 2003
1672003
CdS/CdSe intrinsic stark superlattices
MP Halsall, JE Nicholls, JJ Davies, B Cockayne, PJ Wright
Journal of applied physics 71 (2), 907-915, 1992
801992
THz operation of asymmetric-nanochannel devices
C Balocco, M Halsall, NQ Vinh, AM Song
Journal of Physics: Condensed Matter 20 (38), 384203, 2008
762008
Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells
WM Zheng, MP Halsall, P Harmer, P Harrison, MJ Steer
Journal of applied physics 92 (10), 6039-6042, 2002
682002
Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN
MP Halsall, P Harmer, PJ Parbrook, SJ Henley
Physical Review B—Condensed Matter and Materials Physics 69 (23), 235207, 2004
642004
Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells
M Vaqueiro-Contreras, VP Markevich, J Coutinho, P Santos, IF Crowe, ...
Journal of Applied Physics 125 (18), 2019
622019
Effective-mass approximation and statistical description of luminescence line shape in porous silicon
G Fishman, I Mihalcescu, R Romestain
Physical Review B 48 (3), 1464, 1993
621993
Hydrogenation of graphene by reaction at high pressure and high temperature
D Smith, RT Howie, IF Crowe, CL Simionescu, C Muryn, V Vishnyakov, ...
ACS nano 9 (8), 8279-8283, 2015
612015
Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy
IF Crowe, MP Halsall, O Hulko, AP Knights, RM Gwilliam, M Wojdak, ...
Journal of Applied Physics 109 (8), 2011
602011
Graphene oxide films for field effect surface passivation of silicon for solar cells
M Vaqueiro-Contreras, C Bartlam, RS Bonilla, VP Markevich, MP Halsall, ...
Solar Energy Materials and Solar Cells 187, 189-193, 2018
562018
Excitonic and impurity-related optical transitions in Be -doped multiple quantum wells: Fractional-dimensional space approach
J Kundrotas, A Čerškus, S Ašmontas, G Valušis, B Sherliker, MP Halsall, ...
Physical Review B—Condensed Matter and Materials Physics 72 (23), 235322, 2005
502005
Graphene oxide integrated silicon photonics for detection of vapour phase volatile organic compounds
HC Leo Tsui, O Alsalman, B Mao, A Alodhayb, H Albrithen, AP Knights, ...
Scientific Reports 10 (1), 9592, 2020
492020
Towards substrate engineering of graphene–silicon Schottky diode photodetectors
H Selvi, N Unsuree, E Whittaker, MP Halsall, EW Hill, A Thomas, ...
Nanoscale 10 (7), 3399-3409, 2018
492018
Picosecond far-infrared studies of intra-acceptor dynamics in bulk GaAs and δ-doped AlAs/GaAs quantum wells
MP Halsall, P Harrison, JPR Wells, IV Bradley, H Pellemans
Physical Review B 63 (15), 155314, 2001
462001
Photoluminescence of wide bandgap II–VI superlattices
KP O'Donnell, PJ Parbrook, B Henderson, C Trager-Cowan, X Chen, ...
Journal of crystal growth 101 (1-4), 554-558, 1990
401990
Growth and assessment of CdS and CdSe layers produced on GaAs by metalorganic chemical vapour deposition
MP Halsall, JJ Davies, JE Nicholls, B Cockayne, PJ Wright, GJ Russell
Journal of crystal growth 91 (1-2), 135-140, 1988
381988
Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach
J Kundrotas, A Čerškus, S Ašmontas, G Valušis, MP Halsall, ...
Semiconductor science and technology 22 (9), 1070, 2007
372007
سیستم در حال حاضر قادر به انجام عملکرد نیست. بعداً دوباره امتحان کنید.
مقاله‌ها 1–20