| Ultrahigh Performance Nanoengineered Graphene–Concrete Composites for Multifunctional Applications D Dimov, I Amit, O Gorrie, MD Barnes, NJ Townsend, AIS Neves, ... Advanced Functional Materials 28 (23), 1705183, 2018 | 275 | 2018 |
| High-Mobility and High-Optical Quality Atomically Thin WS2 F Reale, P Palczynski, I Amit, GF Jones, JD Mehew, A Bacon, N Ni, ... Scientific Reports 7 (1), 14911, 2017 | 97 | 2017 |
| Laser-writable high-k dielectric for van der Waals nanoelectronics N Peimyoo, MD Barnes, JD Mehew, A De Sanctis, I Amit, J Escolar, ... Science Advances 5 (1), eaau0906, 2019 | 69 | 2019 |
| Specific and label-free femtomolar biomarker detection with an electrostatically formed nanowire biosensor G Shalev, G Landman, I Amit, Y Rosenwaks, I Levy NPG Asia Materials 5 (3), e41-e41, 2013 | 67 | 2013 |
| Contact Doping of Silicon Wafers and Nanostructures with Phosphine Oxide Monolayers O Hazut, A Agarwala, I Amit, T Subramani, S Zaidiner, Y Rosenwaks, ... ACS nano 6 (11), 10311-10318, 2012 | 66 | 2012 |
| Role of charge traps in the performance of atomically thin transistors I Amit, TJ Octon, NJ Townsend, F Reale, CD Wright, C Mattevi, ... Advanced Materials 29 (19), 1605598, 2017 | 65 | 2017 |
| Spatially resolved correlation of active and total doping concentrations in VLS grown nanowires I Amit, U Givan, JG Connell, DF Paul, JS Hammond, LJ Lauhon, ... Nano letters 13 (6), 2598-2604, 2013 | 53 | 2013 |
| Strain-engineered inverse charge-funnelling in layered semiconductors A De Sanctis, I Amit, SP Hepplestone, MF Craciun, S Russo Nature communications 9 (1), 1652, 2018 | 47 | 2018 |
| Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing A Henning, N Swaminathan, A Godkin, G Shalev, I Amit, Y Rosenwaks Nano Research 8, 2206-2215, 2015 | 38 | 2015 |
| Parallel p–n Junctions across Nanowires by One-Step Ex Situ Doping O Hazut, BC Huang, A Pantzer, I Amit, Y Rosenwaks, A Kohn, CS Chang, ... ACS nano 8 (8), 8357-8362, 2014 | 37 | 2014 |
| Barrier Height Measurement of Metal Contacts to Si Nanowires Using Internal Photoemission of Hot Carriers KH Yoon, JK Hyun, JG Connell, I Amit, Y Rosenwaks, LJ Lauhon Nano letters 13 (12), 6183-6188, 2013 | 35 | 2013 |
| Sub 20 meV Schottky barriers in metal/MoTe2 junctions NJ Townsend, I Amit, MF Craciun, S Russo 2D Materials 5 (2), 025023, 2018 | 26 | 2018 |
| Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire I Amit, D Englander, D Horvitz, Y Sasson, Y Rosenwaks Nano letters 14 (11), 6190-6194, 2014 | 21 | 2014 |
| Functionalised hexagonal-domain graphene for position-sensitive photodetectors A De Sanctis, MD Barnes, I Amit, MF Craciun, S Russo IOP Nanotechnology 28 (12), 124004, 2017 | 17 | 2017 |
| Boron Monolayer Doping: Role of Oxide Capping Layer, Molecular Fragmentation, and Doping Uniformity at the Nanoscale A Tzaguy, P Karadan, K Killi, O Hazut, I Amit, Y Rosenwaks, R Yerushalmi Advanced Materials Interfaces 7 (5), 1902198, 2020 | 15 | 2020 |
| Multiple state electrostatically formed nanowire transistors G Segev, I Amit, A Godkin, A Henning, Y Rosenwaks IEEE Electron Device Letters 36 (7), 651-653, 2015 | 15 | 2015 |
| Multiple state electrostatically formed nanowire transistors G Segev, I Amit, A Godkin, A Henning, Y Rosenwaks IEEE Electron Device Letters 36 (7), 651-653, 2015 | 15 | 2015 |
| Multiple state electrostatically formed nanowire transistors G Segev, I Amit, A Godkin, A Henning, Y Rosenwaks IEEE Electron Device Letters 36 (7), 651-653, 2015 | 15 | 2015 |
| Multiple state electrostatically formed nanowire transistors G Segev, I Amit, A Henning, Y Rosenwaks US Patent 20170243983A1, 2015 | 15 | 2015 |
| Impact of Dopant Compensation on Graded p–n Junctions in Si Nanowires I Amit, N Jeon, LJ Lauhon, Y Rosenwaks ACS applied materials & interfaces 8 (1), 128-134, 2016 | 10 | 2016 |
Monica Felicia CraciunProfessor in Nanoscience and Nanotechnology, University of Exeterایمیل تأیید شده در exeter.ac.uk