| Effect of carrier trapping on the hysteretic current-voltage characteristics in heterostructures DS Shang, Q Wang, LD Chen, R Dong, XM Li, WQ Zhang Physical Review B—Condensed Matter and Materials Physics 73 (24), 245427, 2006 | 450 | 2006 |
| All‐solid‐state synaptic transistor with ultralow conductance for neuromorphic computing CS Yang, DS Shang, N Liu, EJ Fuller, S Agrawal, AA Talin, YQ Li, ... Advanced Functional Materials 28 (42), 1804170, 2018 | 432 | 2018 |
| A synaptic transistor based on quasi‐2D molybdenum oxide CS Yang, DS Shang, N Liu, G Shi, X Shen, RC Yu, YQ Li, Y Sun Advanced Materials 29 (27), 1700906, 2017 | 407 | 2017 |
| A highly CMOS compatible hafnia-based ferroelectric diode Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ... Nature communications 11 (1), 1391, 2020 | 217 | 2020 |
| Oxide‐based electrolyte‐gated transistors for spatiotemporal information processing Y Li, J Lu, D Shang, Q Liu, S Wu, Z Wu, X Zhang, J Yang, Z Wang, H Lv, ... Advanced Materials 32 (47), 2003018, 2020 | 139 | 2020 |
| Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode R Cao, B Song, D Shang, Y Yang, Q Luo, S Wu, Y Li, Y Wang, H Lv, Q Liu, ... IEEE Electron Device Letters 40 (11), 1744-1747, 2019 | 138 | 2019 |
| Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites K Zhai, Y Wu, S Shen, W Tian, H Cao, Y Chai, BC Chakoumakos, ... Nature communications 8 (1), 519, 2017 | 136 | 2017 |
| A reliable all‐2D materials artificial synapse for high energy‐efficient neuromorphic computing J Tang, C He, J Tang, K Yue, Q Zhang, Y Liu, Q Wang, S Wang, N Li, ... Advanced Functional Materials 31 (27), 2011083, 2021 | 119 | 2021 |
| Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing DS Shang, L Shi, JR Sun, BG Shen, F Zhuge, RW Li, YG Zhao Applied Physics Letters 96 (7), 2010 | 113 | 2010 |
| Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing C He, J Tang, DS Shang, J Tang, Y Xi, S Wang, N Li, Q Zhang, JK Lu, ... ACS applied materials & interfaces 12 (10), 11945-11954, 2020 | 101 | 2020 |
| Room‐temperature nonvolatile memory based on a single‐phase multiferroic hexaferrite K Zhai, DS Shang, YS Chai, G Li, JW Cai, BG Shen, Y Sun Advanced Functional Materials 28 (9), 1705771, 2018 | 95 | 2018 |
| Mimicking synaptic plasticity and neural network using memtranstors JX Shen, DS Shang, YS Chai, SG Wang, BG Shen, Y Sun Advanced Materials 30 (12), 1706717, 2018 | 94 | 2018 |
| Resistive switching properties in oxygen-deficient Pr0. 7Ca0. 3MnO3 junctions with active Al top electrodes SL Li, DS Shang, J Li, JL Gang, DN Zheng Journal of Applied Physics 105 (3), 2009 | 92 | 2009 |
| Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks X Zhang, J Lu, Z Wang, R Wang, J Wei, T Shi, C Dou, Z Wu, J Zhu, ... Science Bulletin 66 (16), 1624-1633, 2021 | 90 | 2021 |
| Low power flexible monolayer MoS2 integrated circuits J Tang, Q Wang, J Tian, X Li, N Li, Y Peng, X Li, Y Zhao, C He, S Wu, J Li, ... Nature Communications 14 (1), 3633, 2023 | 84 | 2023 |
| One transistor one electrolyte‐gated transistor based spiking neural network for power‐efficient neuromorphic computing system Y Li, Z Xuan, J Lu, Z Wang, X Zhang, Z Wu, Y Wang, H Xu, C Dou, Y Kang, ... Advanced Functional Materials 31 (26), 2100042, 2021 | 84 | 2021 |
| Bipolar resistance switching in fully transparent ZnO: Mg-based devices L Shi, D Shang, J Sun, B Shen Applied physics express 2 (10), 101602, 2009 | 82 | 2009 |
| Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag–La0. 7Ca0. 3MnO3–Pt sandwiches R Dong, Q Wang, LD Chen, DS Shang, TL Chen, XM Li, WQ Zhang Applied Physics Letters 86 (17), 2005 | 80 | 2005 |
| Nonvolatile memory based on nonlinear magnetoelectric effects J Shen, J Cong, Y Chai, D Shang, S Shen, K Zhai, Y Tian, Y Sun Physical Review Applied 6 (2), 021001, 2016 | 77 | 2016 |
| Electrochemical-reaction-induced synaptic plasticity in MoO x-based solid state electrochemical cells CS Yang, DS Shang, YS Chai, LQ Yan, BG Shen, Y Sun Physical Chemistry Chemical Physics 19 (6), 4190-4198, 2017 | 73 | 2017 |
Young SunInstitute of Physics, Chinese Academy of Sciences, Chinaایمیل تأیید شده در iphy.ac.cn