| Optical and transport properties of ultrathin NbN films and nanostructures A Semenov, B Günther, U Böttger, HW Hübers, H Bartolf, A Engel, ... Physical Review B—Condensed Matter and Materials Physics 80 (5), 054510, 2009 | 238 | 2009 |
| Current-assisted thermally activated flux liberation in ultrathin nanopatterned NbN superconducting meander structures H Bartolf, A Engel, A Schilling, K Il’in, M Siegel, HW Hübers, A Semenov Physical Review B—Condensed Matter and Materials Physics 81 (2), 024502, 2010 | 195 | 2010 |
| Ultra-thin NbN films on Si: crystalline and superconducting properties K Ilin, R Schneider, D Gerthsen, A Engel, H Bartolf, A Schilling, ... Journal of Physics: Conference Series 97 (1), 012045, 2008 | 60 | 2008 |
| Robust 3.3 kV silicon carbide MOSFETs with surge and short circuit capability L Knoll, A Mihaila, F Bauer, V Sundaramoorthy, E Bianda, R Minamisawa, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 35 | 2017 |
| Development of a 60 Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures H Bartolf, A Mihaila, I Nistor, M Jurisch, B Leibold, M Zimmermann IEEE transactions on semiconductor manufacturing 26 (4), 529-541, 2013 | 35 | 2013 |
| Current-induced critical state in NbN thin-film structures K Il’in, M Siegel, A Engel, H Bartolf, A Schilling, A Semenov, HW Huebers Journal of Low Temperature Physics 151, 585-590, 2008 | 32 | 2008 |
| Study of 4H-SiC Schottky diode designs for 3.3 kV applications H Bartolf, V Sundaramoorthy, A Mihaila, M Berthou, P Godignon, J Millan Materials Science Forum 778, 795-799, 2014 | 28 | 2014 |
| Fluctuation mechanisms in superconductors H Bartolf Fluctuation Mechanisms in Superconductors: Nanowire Single-Photon Counters …, 2015 | 25 | 2015 |
| Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET D Dutta, DS De, D Fan, S Roy, G Alfieri, M Camarda, M Amsler, ... Applied Physics Letters 115 (10), 2019 | 24 | 2019 |
| Temperature-and field-dependence of critical currents in NbN microbridges A Engel, H Bartolf, A Schilling, K Il'in, M Siegel, A Semenov, HW Hübers Journal of Physics: Conference Series 97 (1), 012152, 2008 | 22 | 2008 |
| A novel edge termination for high voltage SiC devices A Mihaila, VK Sundaramoorthy, R Minamisawa, L Knoll, H Bartolf, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 19 | 2016 |
| Dopant imaging of power semiconductor device cross sections U Gysin, E Meyer, T Glatzel, G Günzburger, HR Rossmann, TA Jung, ... Microelectronic Engineering 160, 18-21, 2016 | 16 | 2016 |
| Nanoscale fabrication by intrinsic suppression of proximity-electron exposures and general considerations for easy and effective top–down fabrication H Bartolf, K Inderbitzin, LB Gómez, A Engel, A Schilling Journal of Micromechanics and Microengineering 20 (12), 125015, 2010 | 16 | 2010 |
| Fabrication of metallic structures with lateral dimensions less than 15 nm and Jc (T)-measurements in NbN micro-and nanobridges H Bartolf, A Engel, A Schilling, K Il’in, M Siegel Physica C: Superconductivity and its applications 468 (7-10), 793-796, 2008 | 16 | 2008 |
| Hall effect across the quantum phase transition of CeCu6-xAux H Bartolf, C Pfleiderer, O Stockert, M Vojta, HV Löhneysen Physica B: Condensed Matter 359, 86-88, 2005 | 13 | 2005 |
| Fabrication and characterization of superconducting nanowire highspeed single-photon detectors H Bartolf Verlag nicht ermittelbar, 2011 | 11 | 2011 |
| Magnetic vortices in superconducting photon detectors A Engel, H Bartolf, A Schilling, A Semenov, HW Hübers, K Il'in, M Siegel Journal of Modern Optics 56 (2-3), 352-357, 2009 | 10 | 2009 |
| Study on transient light emission of SiC power MOSFETs regarding the sensing of source-drain currents in hard-switched power electronic applications J Winkler, J Homoth, H Bartolf, I Kallfass PCIM Europe 2019; International Exhibition and Conference for Power …, 2019 | 9 | 2019 |
| Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices U Gysin, T Glatzel, T Schmölzer, A Schöner, S Reshanov, H Bartolf, ... Beilstein journal of nanotechnology 6 (1), 2485-2497, 2015 | 9 | 2015 |
| Multi-project wafer scale process for productive research and development H Bartolf, A Engel, L Gómez, A Schilling Raith Application Note, 2008 | 9 | 2008 |
Andreas SchillingUniversity of Zurichایمیل تأیید شده در physik.uzh.ch
