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| Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory X Ding, Y Feng, P Huang, L Liu, J Kang Nanoscale research letters 14, 1-7, 2019 | 81 | 2019 |
| Scalable Synthesis of Highly Crystalline MoSe2 and Its Ambipolar Behavior Y Li, K Zhang, F Wang, Y Feng, Y Li, Y Han, D Tang, B Zhang ACS applied materials & interfaces 9 (41), 36009-36016, 2017 | 59 | 2017 |
| Spin transport properties based on spin gapless semiconductor CoFeMnSi J Han, Y Feng, K Yao, GY Gao Applied Physics Letters 111 (13), 2017 | 56 | 2017 |
| Synthesis of Large-Area Highly Crystalline Monolayer Molybdenum Disulfide with Tunable Grain Size in a H2 Atmosphere Y Feng, K Zhang, F Wang, Z Liu, M Fang, R Cao, Y Miao, Z Yang, W Mi, ... ACS applied materials & interfaces 7 (40), 22587-22593, 2015 | 53 | 2015 |
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| Half-metals and half-semiconductors in a transition metal doped SnSe 2 monolayer: a first-principles study X Wu, J Han, Y Feng, G Li, C Wang, G Ding, G Gao RSC advances 7 (70), 44499-44504, 2017 | 47 | 2017 |
| Controlled Growth of Bilayer‐MoS2 Films and MoS2‐Based Field‐Effect Transistor (FET) Performance Optimization M Fang, F Wang, Y Han, Y Feng, T Ren, Y Li, D Tang, Z Song, K Zhang Advanced Electronic Materials 4 (4), 1700524, 2018 | 44 | 2018 |
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| Memristor-based storage system with convolutional autoencoder-based image compression network Y Feng, Y Zhang, Z Zhou, P Huang, L Liu, X Liu, J Kang Nature Communications 15 (1), 1132, 2024 | 28 | 2024 |
| Negative differential resistance effect in Ru-based RRAM device fabricated by atomic layer deposition Y Feng, P Huang, Z Zhou, X Ding, L Liu, X Liu, J Kang Nanoscale Research Letters 14, 1-5, 2019 | 28 | 2019 |
| Understanding of the volatile and nonvolatile switching in Ag-based memristors X Ding, P Huang, Y Zhao, Y Feng, L Liu IEEE Transactions on Electron Devices 69 (3), 1034-1040, 2022 | 23 | 2022 |
| Optimization of the annealing process and nanoscale piezoelectric properties of (002) AlN thin films B Fu, F Wang, R Cao, Y Han, Y Miao, Y Feng, F Xiao, K Zhang Journal of Materials Science: Materials in Electronics 28, 9295-9300, 2017 | 19 | 2017 |
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| Field effect properties of single-layer MoS2(1−x)Se2x nanosheets produced by a one-step CVD process D Tang, F Wang, B Zhang, Y Li, Y Li, Y Feng, Y Han, J Ma, T Ren, ... Journal of Materials Science 53 (20), 14447-14455, 2018 | 13 | 2018 |
| A seamless, reconfigurable, and highly parallel in-memory stochastic computing approach with resistive random access memory array W Shen, P Huang, M Fan, Y Zhao, Y Feng, L Liu, X Liu, X Zhang, J Kang IEEE Transactions on Electron Devices 68 (1), 103-108, 2020 | 10 | 2020 |
| High-performance FET arrays enabled by improved uniformity of wafer-scale MoS2 synthesized via thermal vapor sulfurization J Wei, F Wang, B Zhang, X Shan, X Di, Y Li, Y Feng, K Zhang Applied Surface Science 483, 1136-1141, 2019 | 10 | 2019 |
| Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance … X Guo, F Wang, Z Ma, X Shan, X Lin, Y Ji, X Zhao, Y Feng, Y Han, Y Xie, ... ACS Applied Materials & Interfaces 15 (26), 31617-31626, 2023 | 8 | 2023 |
