| Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy H Murakami, K Nomura, K Goto, K Sasaki, K Kawara, QT Thieu, ... Applied Physics Express 8 (1), 015503, 2014 | 443 | 2014 |
| Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide … M Higashiwaki, K Konishi, K Sasaki, K Goto, K Nomura, QT Thieu, ... Applied Physics Letters 108 (13), 2016 | 354 | 2016 |
| Anisotropy, phonon modes, and free charge carrier parameters in monoclinic -gallium oxide single crystals M Schubert, R Korlacki, S Knight, T Hofmann, S Schöche, V Darakchieva, ... Physical Review B 93 (12), 125209, 2016 | 227 | 2016 |
| Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy K Nomura, K Goto, R Togashi, H Murakami, Y Kumagai, A Kuramata, ... Journal of crystal growth 405, 19-22, 2014 | 149 | 2014 |
| Electronic properties of the residual donor in unintentionally doped β-Ga2O3 NT Son, K Goto, K Nomura, QT Thieu, R Togashi, H Murakami, ... Journal of Applied Physics 120 (23), 2016 | 107 | 2016 |
| Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2 Y Kumagai, K Akiyama, R Togashi, H Murakami, M Takeuchi, T Kinoshita, ... Journal of crystal growth 305 (2), 366-371, 2007 | 84 | 2007 |
| Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy T Kinoshita, T Nagashima, T Obata, S Takashima, R Yamamoto, ... Applied Physics Express 8 (6), 061003, 2015 | 81 | 2015 |
| Crystal growth, surfaces, interfaces, thin films, and bulk materials-055501 Carrier Gas Dependence at Initial Processes for a-Plane AIN Growth on r-Plane Sapphire Substrates by … J Tajima, C Echizen, R Togashi, H Murakami, Y Kumagai, K Takada, ... Japanese Journal of Applied Physics 50 (5), 2011 | 62 | 2011 |
| Ga2O3Schottky barrier diodes with n−-Ga2O3drift layers grown by HVPE M Higashiwaki, K Sasaki, K Goto, K Nomura, QT Thieu, R Togashi, ... 2015 73rd Annual Device Research Conference (DRC), 29-30, 2015 | 60 | 2015 |
| Thermal stability of β-Ga2O3 in mixed flows of H2 and N2 R Togashi, K Nomura, C Eguchi, T Fukizawa, K Goto, QT Thieu, ... Japanese Journal of Applied Physics 54 (4), 041102, 2015 | 51 | 2015 |
| Theoretical analysis for surface reconstruction of AlN and InN in the presence of hydrogen H Suzuki, R Togashi, H Murakami, Y Kumagai, A Koukitu Japanese Journal of Applied Physics 46 (8R), 5112, 2007 | 42 | 2007 |
| Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy K Konishi, K Goto, R Togashi, H Murakami, M Higashiwaki, A Kuramata, ... Journal of Crystal Growth 492, 39-44, 2018 | 35 | 2018 |
| Experimental and ab‐initio studies of temperature dependent InN decomposition in various ambient R Togashi, T Kamoshita, Y Nishizawa, H Murakami, Y Kumagai, A Koukitu physica status solidi c 5 (6), 1518-1521, 2008 | 25 | 2008 |
| Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor H Murakami, N Takekawa, A Shiono, QT Thieu, R Togashi, Y Kumagai, ... Journal of Crystal Growth 456, 140-144, 2016 | 23 | 2016 |
| Investigation of polarity dependent InN{0001} decomposition in N2 and H2 ambient R Togashi, T Kamoshita, H Adachi, H Murakami, Y Kumagai, A Koukitu physica status solidi c 6 (S2 2), S372-S375, 2009 | 20 | 2009 |
| Control of in‐plane epitaxial relationship of c ‐plane AlN layers grown on a ‐plane sapphire substrates by hydride vapor phase epitaxy J Tajima, R Togashi, H Murakami, Y Kumagai, K Takada, A Koukitu physica status solidi c 8 (7‐8), 2028-2030, 2011 | 19 | 2011 |
| Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates Y Kumagai, F Satoh, R Togashi, H Murakami, K Takemoto, J Iihara, ... Journal of crystal growth 296 (1), 11-14, 2006 | 18 | 2006 |
| Influence of high-temperature processing on the surface properties of bulk AlN substrates S Tojo, R Yamamoto, R Tanaka, QT Thieu, R Togashi, T Nagashima, ... Journal of Crystal Growth 446, 33-38, 2016 | 15 | 2016 |
| High rate growth of In2O3 at 1000 C by halide vapor phase epitaxy R Togashi, S Numata, M Hayashida, T Suga, K Goto, A Kuramata, ... Japanese Journal of Applied Physics 55 (12), 1202B3, 2016 | 14 | 2016 |
| Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2 Y Kumagai, T Igi, M Ishizuki, R Togashi, H Murakami, K Takada, A Koukitu Journal of crystal growth 350 (1), 60-65, 2012 | 14 | 2012 |
