مقاله‌های دارای تعهدات انتشار عمومی - Francesco Montalentiبیشتر بدانید
جای دیگری دردسترس نیست: ۶
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si (001)
R Bergamaschini, M Brehm, M Grydlik, T Fromherz, G Bauer, F Montalenti
Nanotechnology 22 (28), 285704, 2011
تعهدات: Austrian Science Fund
Dynamics of crosshatch patterns in heteroepitaxy
F Rovaris, MH Zoellner, P Zaumseil, A Marzegalli, L Di Gaspare, ...
Physical Review B 100 (8), 085307, 2019
تعهدات: European Commission, Federal Ministry of Education and Research, Germany
Strain engineering in highly mismatched SiGe/Si heterostructures
F Isa, A Jung, M Salvalaglio, YAR Dasilva, I Marozau, M Meduňa, ...
Materials Science in Semiconductor Processing 70, 117-122, 2017
تعهدات: Swiss National Science Foundation
Controlling the relaxation mechanism of low strain Si1− xGex/Si (001) layers and reducing the threading dislocation density by providing a preexisting dislocation source
L Becker, P Storck, T Schulz, MH Zoellner, L Di Gaspare, F Rovaris, ...
Journal of Applied Physics 128 (21), 2020
تعهدات: European Commission
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects
M De Donno, M Albani, R Bergamaschini, F Montalenti
Physical Review Materials 6 (2), 023401, 2022
تعهدات: Government of Italy
New insights into the electronic states of the Ge (0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation
F Reichmann, E Scalise, AP Becker, EVS Hofmann, J Dabrowski, ...
Applied Surface Science 571, 151264, 2022
تعهدات: UK Engineering and Physical Sciences Research Council, Government of Italy
جای دیگری دردسترس است: ۵۰
Monolithic growth of ultrathin Ge nanowires on Si (001)
JJ Zhang, G Katsaros, F Montalenti, D Scopece, RO Rezaev, C Mickel, ...
Physical review letters 109 (8), 085502, 2012
تعهدات: German Research Foundation
Key role of the wetting layer in revealing the hidden path of Ge/Si (001) Stranski-Krastanow growth onset
M Brehm, F Montalenti, M Grydlik, G Vastola, H Lichtenberger, N Hrauda, ...
Physical Review B—Condensed Matter and Materials Physics 80 (20), 205321, 2009
تعهدات: Austrian Science Fund
Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si (001) substrates
TU Schülli, G Vastola, MI Richard, A Malachias, G Renaud, F Uhlík, ...
Physical review letters 102 (2), 025502, 2009
تعهدات: Austrian Science Fund
Faceting of equilibrium and metastable nanostructures: a phase-field model of surface diffusion tackling realistic shapes
M Salvalaglio, R Backofen, R Bergamaschini, F Montalenti, A Voigt
Crystal Growth & Design 15 (6), 2787-2794, 2015
تعهدات: German Research Foundation, Fondazione Cariplo
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds<? format?> to a Perfectly Faceted Wetting Layer
G Chen, B Sanduijav, D Matei, G Springholz, D Scopece, MJ Beck, ...
Physical review letters 108 (5), 055503, 2012
تعهدات: Austrian Science Fund
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates
G Vastola, M Grydlik, M Brehm, T Fromherz, G Bauer, F Boioli, L Miglio, ...
Physical Review B—Condensed Matter and Materials Physics 84 (15), 155415, 2011
تعهدات: Austrian Science Fund
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment
M Albani, L Ghisalberti, R Bergamaschini, M Friedl, M Salvalaglio, A Voigt, ...
Physical Review Materials 2 (9), 093404, 2018
تعهدات: Swiss National Science Foundation, European Commission, Government of Italy
Temperature-Dependent Stability of Polytypes and Stacking Faults in : Reconciling Theory and Experiments
E Scalise, A Marzegalli, F Montalenti, L Miglio
Physical Review Applied 12 (2), 021002, 2019
تعهدات: European Commission, Government of Italy
Morphological evolution of pit-patterned Si (001) substrates driven by surface-energy reduction
M Salvalaglio, R Backofen, A Voigt, F Montalenti
Nanoscale research letters 12, 1-8, 2017
تعهدات: Government of Italy
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si (001) Substrates:<? format?> A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing
JJ Zhang, F Montalenti, A Rastelli, N Hrauda, D Scopece, H Groiss, ...
Physical review letters 105 (16), 166102, 2010
تعهدات: Austrian Science Fund, German Research Foundation
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading
O Skibitzki, MH Zoellner, F Rovaris, MA Schubert, Y Yamamoto, ...
Physical Review Materials 4 (10), 103403, 2020
تعهدات: European Commission
Photodetection in hybrid single-layer graphene/fully coherent germanium island nanostructures selectively grown on silicon nanotip patterns
G Niu, G Capellini, G Lupina, T Niermann, M Salvalaglio, A Marzegalli, ...
ACS applied materials & interfaces 8 (3), 2017-2026, 2016
تعهدات: German Research Foundation
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures
M Salvalaglio, F Montalenti
Journal of Applied Physics 116 (10), 2014
تعهدات: Fondazione Cariplo
Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si
M Salvalaglio, R Bergamaschini, F Isa, A Scaccabarozzi, G Isella, ...
ACS applied materials & interfaces 7 (34), 19219-19225, 2015
تعهدات: Swiss National Science Foundation
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