| Design and fabrication of GaN p-n junction diodes with negative beveled-mesa termination T Maeda, T Narita, H Ueda, M Kanechika, T Uesugi, T Kachi, T Kimoto, ... IEEE Electron Device Letters 40 (6), 941-944, 2019 | 112 | 2019 |
| Impact ionization coefficients and critical electric field in GaN T Maeda, T Narita, S Yamada, T Kachi, T Kimoto, M Horita, J Suda Journal of Applied Physics 129 (18), 2021 | 90 | 2021 |
| Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode T Maeda, M Okada, M Ueno, Y Yamamoto, T Kimoto, M Horita, J Suda Applied Physics Express 10 (5), 051002, 2017 | 83 | 2017 |
| Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric properties J Casamento, H Lee, T Maeda, V Gund, K Nomoto, L van Deurzen, ... Applied Physics Letters 120 (15), 2022 | 50 | 2022 |
| GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020 | 45 | 2020 |
| Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition T Maeda, M Okigawa, Y Kato, I Takahashi, T Shinohe AIP Advances 10 (12), 2020 | 33 | 2020 |
| Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination T Maeda, T Narita, H Ueda, M Kanechika, T Uesugi, T Kachi, T Kimoto, ... Applied Physics Letters 115 (14), 2019 | 31 | 2019 |
| Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1− xN/GaN heterostructures J Casamento, H Lee, CS Chang, MF Besser, T Maeda, DA Muller, ... APL Materials 9 (9), 2021 | 30 | 2021 |
| Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage T Maeda, T Narita, M Kanechika, T Uesugi, T Kachi, T Kimoto, M Horita, ... Applied Physics Letters 112 (25), 2018 | 30 | 2018 |
| Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n+ junction diodes T Maeda, T Narita, H Ueda, M Kanechika, T Uesugi, T Kachi, T Kimoto, ... Japanese Journal of Applied Physics 58 (SC), SCCB14, 2019 | 27 | 2019 |
| Parallel-plane breakdown fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n junction diodes with double-side-depleted shallow bevel termination T Maeda, T Narita, H Ueda, M Kanechika, T Uesugi, T Kachi, T Kimoto, ... 2018 IEEE International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2018 | 27 | 2018 |
| Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage T Maeda, M Okada, M Ueno, Y Yamamoto, M Horita, J Suda Applied Physics Express 9 (9), 091002, 2016 | 26 | 2016 |
| Experimental determination of impact ionization coefficients along <11-20> in 4H-SiC D Stefanakis, X Chi, T Maeda, M Kaneko, T Kimoto IEEE Transactions on Electron Devices 67 (9), 3740-3744, 2020 | 25 | 2020 |
| AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer T Maeda, R Page, K Nomoto, M Toita, HG Xing, D Jena Applied Physics Express 15 (06), 061007, 2022 | 23 | 2022 |
| Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces M Hara, S Asada, T Maeda, T Kimoto Applied Physics Express 13 (4), 041001, 2020 | 22 | 2020 |
| Impact ionization coefficients in GaN measured by above-and sub-E g illuminations for p−/n+ junction T Maeda, T Narita, S Yamada, T Kachi, T Kimoto, M Horita, J Suda 2019 IEEE International Electron Devices Meeting (IEDM), 4.2.1-4.2. 4, 2019 | 22* | 2019 |
| FerroHEMTs: High-current and high-speed all-epitaxial AlScN/GaN ferroelectric transistors J Casamento, K Nomoto, TS Nguyen, H Lee, C Savant, L Li, A Hickman, ... 2022 International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2022 | 19 | 2022 |
| Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering A Kobayashi, Y Honda, T Maeda, T Okuda, K Ueno, H Fujioka Applied Physics Express 17 (1), 011002, 2023 | 13 | 2023 |
| Phonon-assisted optical absorption due to Franz–Keldysh effect in 4H-SiC p–n junction diode under high reverse bias voltage T Maeda, X Chi, M Horita, J Suda, T Kimoto Applied Physics Express 11 (9), 091302, 2018 | 11 | 2018 |
| Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes with Various Doping Concentrations T Maeda, T Narita, S Yamada, T Kachi, T Kimoto, M Horita, J Suda IEEE Electron Device Letters 43 (1), 96-99, 2021 | 10 | 2021 |