مقاله‌های دارای تعهدات انتشار عمومی - Samuel James Baderبیشتر بدانید
جای دیگری دردسترس نیست: ۲
A New Holistic Model of 2-D Semiconductor FETs
EG Marin, SJ Bader, D Jena
IEEE Transactions on Electron Devices 65 (3), 1239-1245, 2018
تعهدات: US National Science Foundation, US Department of Defense
Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two‐Dimensional Hole Gas Heterostructures
Ł Janicki, R Chaudhuri, SJ Bader, HG Xing, D Jena, R Kudrawiec
physica status solidi (RRL)–Rapid Research Letters 15 (4), 2000573, 2021
تعهدات: US National Science Foundation, US Department of Defense, Narodowe Centrum Nauki
جای دیگری دردسترس است: ۱۴
Coherence and Decay of Higher Energy Levels of a Superconducting Transmon Qubit
MJ Peterer, SJ Bader, X Jin, F Yan, A Kamal, TJ Gudmundsen, PJ Leek, ...
Physical Review Letters 114 (1), 010501, 2015
تعهدات: UK Engineering and Physical Sciences Research Council
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
R Chaudhuri, SJ Bader, Z Chen, DA Muller, HG Xing, D Jena
Science 365 (6460), 1454-1457, 2019
تعهدات: US National Science Foundation, US Department of Defense
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
SJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ...
IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020
تعهدات: US National Science Foundation, US Department of Defense
High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs
A Hickman, R Chaudhuri, SJ Bader, K Nomoto, K Lee, HG Xing, D Jena
IEEE Electron Device Letters 40 (8), 1293-1296, 2019
تعهدات: US National Science Foundation, US Department of Defense
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ...
IEEE Electron Device Letters 41 (5), 689-692, 2020
تعهدات: US National Science Foundation, US Department of Defense
Next generation electronics on the ultrawide-bandgap aluminum nitride platform
AL Hickman, R Chaudhuri, SJ Bader, K Nomoto, L Li, JCM Hwang, ...
Semiconductor Science and Technology 36 (4), 044001, 2021
تعهدات: US National Science Foundation, US Department of Defense
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
SJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ...
IEEE Electron Device Letters 39 (12), 1848-1851, 2018
تعهدات: US National Science Foundation, US Department of Defense
First RF Power Operation of AlN/GaN/AlN HEMTs With> 3 A/mm and 3 W/mm at 10 GHz
A Hickman, R Chaudhuri, L Li, K Nomoto, SJ Bader, JCM Hwang, ...
IEEE Journal of the Electron Devices Society 9, 121-124, 2020
تعهدات: US National Science Foundation, US Department of Defense
High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107 (23), 232101, 2015
تعهدات: US Department of Energy
GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX
K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ...
2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020
تعهدات: US National Science Foundation, US Department of Defense
GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current
SJ Bader, R Chaudhuri, A Hickman, K Nomoto, S Bharadwaj, HW Then, ...
2019 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2019
تعهدات: US National Science Foundation, US Department of Defense
Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas
SJ Bader, R Chaudhuri, MF Schubert, HW Then, HG Xing, D Jena
Applied Physics Letters 114 (25), 2019
تعهدات: US National Science Foundation, US Department of Defense
Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells
H Condori Quispe, SM Islam, S Bader, A Chanana, K Lee, R Chaudhuri, ...
Applied Physics Letters 111 (7), 2017
تعهدات: US National Science Foundation, US Department of Defense
Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures
R Chaudhuri, SJ Bader, Z Chen, D Muller, HG Xing, D Jena
physica status solidi (b) 257 (4), 1900567, 2020
تعهدات: US National Science Foundation, US Department of Defense
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