دنبال کردن
Saurabh V. Suryavanshi
Saurabh V. Suryavanshi
Synopsys
ایمیل تأیید شده در suryavanshi.me - صفحهٔ اصلی
عنوان
نقل شده توسط
نقل شده توسط
سال
Energy Dissipation in Monolayer MoS2 Electronics‏
E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ...‏
Nano letters 17 (6), 3429-3433, 2017‏
2432017
Low Variability in Synthetic Monolayer MoS2 Devices‏
KKH Smithe, SV Suryavanshi, M Muñoz Rojo, AD Tedjarati, E Pop‏
ACS nano 11 (8), 8456-8463, 2017‏
2272017
High Current Density in Monolayer MoS2 Doped by AlOx‏
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop‏
ACS nano 15 (1), 1587-1596, 2021‏
2202021
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices‏
KKH Smithe, CD English, SV Suryavanshi, E Pop‏
2D Materials 4 (1), 011009, 2016‏
1972016
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry‏
E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ...‏
ACS applied materials & interfaces 9 (49), 43013-43020, 2017‏
1892017
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2‏
KKH Smithe, CD English, SV Suryavanshi, E Pop‏
Nano letters 18 (7), 4516-4522, 2018‏
1632018
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials‏
S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ...‏
Science advances 5 (8), eaax1325, 2019‏
1422019
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities‏
SV Suryavanshi, E Pop‏
Journal of Applied Physics 120 (22), 2016‏
1182016
Effective n-type doping of monolayer MoS2 by AlOx‏
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop‏
2017 75th annual device research conference (DRC), 1-2, 2017‏
652017
Thermal boundary conductance of two-dimensional MoS2 interfaces‏
SV Suryavanshi, AJ Gabourie, A Barati Farimani, E Pop‏
Journal of Applied Physics 126 (5), 2019‏
512019
Reduced thermal conductivity of supported and encased monolayer and bilayer MoS2‏
AJ Gabourie, SV Suryavanshi, AB Farimani, E Pop‏
2D Materials 8 (1), 011001, 2020‏
462020
Real-time* multiple object tracking (MOT) for autonomous navigation‏
A Agarwal, S Suryavanshi‏
Technical report, 2017‏
262017
2D Device Trends‏
CJ McClellan, SV Suryavanshi, CD English, KKH Smithe, CS Bailey, ...‏
unpublished 3, 3824-3830, 2023‏
162023
Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices‏
SV Suryavanshi, E Pop‏
2015 73rd Annual Device Research Conference (DRC), 235-236, 2015‏
152015
Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs‏
CA Paz de Araujo, J Celinska, CR McWilliams, L Shifren, G Yeric, ...‏
Apl Materials 10 (4), 2022‏
82022
Enhanced Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices‏
KKH Smithe, CD English, SV Suryavanshi, E Pop‏
arXiv preprint arXiv:1608.00987, 2016‏
62016
Thermal boundary conductance of the MOS2-SiO2interface‏
SV Suryavanshi, AJ Gabourie, AB Farimani, E Yalon, E Pop‏
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 26-29, 2017‏
52017
Scaling theory of two-dimensional field effect transistors‏
SV Suryavanshi, CD English, HSP Wong, E Pop‏
arXiv preprint arXiv:2105.10791, 2021‏
42021
Stanford 2D Semiconductor (S2DS) Transistor Model‏
SV Suryavanshi, E Pop‏
Version 1.1. 0). nanoHUB. doi: 10.4231/D3ZC7RV9X, 2016‏
42016
High mobility in monolayer MoS2 devices grown by chemical vapor deposition‏
KKH Smithe, CD English, SV Suryavanshi, E Pop‏
2015 73rd Annual Device Research Conference (DRC), 239-240, 2015‏
42015
سیستم در حال حاضر قادر به انجام عملکرد نیست. بعداً دوباره امتحان کنید.
مقاله‌ها 1–20