| Atomically precise placement of single dopants in Si SR Schofield, NJ Curson, MY Simmons, FJ Rueß, T Hallam, L Oberbeck, ... Physical review letters 91 (13), 136104, 2003 | 507 | 2003 |
| Towards the fabrication of phosphorus qubits for a silicon quantum computer JL O’Brien, SR Schofield, MY Simmons, R Clark, AS Dzurak, NJ Curson, ... Physical Review B 64, 161401R, 2001 | 289 | 2001 |
| Toward atomic-scale device fabrication in silicon using scanning probe microscopy FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ... Nano Letters 4 (10), 1969-1973, 2004 | 216 | 2004 |
| Quantum engineering at the silicon surface using dangling bonds SR Schofield, P Studer, CF Hirjibehedin, NJ Curson, G Aeppli, DR Bowler Nature communications 4 (1), 1649, 2013 | 201 | 2013 |
| Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer L Oberbeck, NJ Curson, MY Simmons, R Brenner, AR Hamilton, ... Applied physics letters 81 (17), 3197-3199, 2002 | 124 | 2002 |
| Charge density waves in the graphene sheets of the superconductor CaC6 KC Rahnejat, CA Howard, NE Shuttleworth, SR Schofield, K Iwaya, ... Nature communications 2 (1), 558, 2011 | 91 | 2011 |
| Progress in silicon-based quantum computing RG Clark, R Brenner, TM Buehler, V Chan, NJ Curson, AS Dzurak, ... Philosophical Transactions of the Royal Society of London. Series A …, 2003 | 90 | 2003 |
| Thermal dissociation and desorption of PH3 on Si(001): A reinterpretation of spectroscopic data HF Wilson, O Warschkow, NA Marks, NJ Curson, SR Schofield, ... Physical Review B 74 (19), 195310, 2006 | 85 | 2006 |
| Phosphine dissociation on the Si(001) surface HF Wilson, O Warschkow, NA Marks, SR Schofield, NJ Curson, PV Smith, ... Physical review letters 93 (22), 226102, 2004 | 81 | 2004 |
| Nondestructive imaging of atomically thin nanostructures buried in silicon G Gramse, A Kölker, T Lim, TJZ Stock, H Solanki, SR Schofield, ... Science advances 3 (6), e1602586, 2017 | 78 | 2017 |
| Phosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structures O Warschkow, HF Wilson, NA Marks, SR Schofield, NJ Curson, PV Smith, ... Physical Review B 72 (12), 125328, 2005 | 62 | 2005 |
| Scanning probe microscopy for silicon device fabrication MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ... Molecular Simulation 31 (6-7), 505-515, 2005 | 60 | 2005 |
| STM characterization of the Si-P heterodimer NJ Curson, SR Schofield, MY Simmons, L Oberbeck, JL O’brien, RG Clark Physical Review B 69 (19), 195303, 2004 | 60 | 2004 |
| Atomic-scale patterning of arsenic in silicon by scanning tunneling microscopy TJZ Stock, O Warschkow, PC Constantinou, J Li, S Fearn, E Crane, ... ACS nano 14 (3), 3316-3327, 2020 | 58 | 2020 |
| Reaction paths of phosphine dissociation on silicon (001) O Warschkow, NJ Curson, SR Schofield, NA Marks, HF Wilson, ... The Journal of Chemical Physics 144 (1), 2016 | 50 | 2016 |
| Water on silicon (001): defects and initial steps of surface oxidation O Warschkow, SR Schofield, NA Marks, MW Radny, PV Smith, ... Physical Review B—Condensed Matter and Materials Physics 77 (20), 201305, 2008 | 49 | 2008 |
| Valence surface electronic states on Ge(001) MW Radny, GA Shah, SR Schofield, PV Smith, NJ Curson Physical review letters 100 (24), 246807, 2008 | 46 | 2008 |
| Phosphine dissociation and diffusion on Si(001) observed at the atomic scale SR Schofield, NJ Curson, O Warschkow, NA Marks, HF Wilson, ... The Journal of Physical Chemistry B 110 (7), 3173-3179, 2006 | 45 | 2006 |
| Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy K Sinthiptharakoon, SR Schofield, P Studer, V Brázdová, CF Hirjibehedin, ... Journal of Physics: Condensed Matter 26 (1), 012001, 2013 | 42 | 2013 |
| Towards the atomic-scale fabrication of a silicon-based solid state quantum computer MY Simmons, SR Schofield, JL O’Brien, NJ Curson, L Oberbeck, T Hallam, ... Surface science 532, 1209-1218, 2003 | 41 | 2003 |
Neil CursonProfessor of Nanoelectronics, London Centre for Nanotechnology, UCLایمیل تأیید شده در ucl.ac.uk