High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ...
Applied physics letters 75 (14), 2073-2075, 1999
297 1999 Luminescence of as-grown and thermally annealed GaAsN/GaAs S Francoeur, G Sivaraman, Y Qiu, S Nikishin, H Temkin
Applied physics letters 72 (15), 1857-1859, 1998
192 1998 High quality GaN–InGaN heterostructures grown on (111) silicon substrates JW Yang, CJ Sun, Q Chen, MZ Anwar, M Asif Khan, SA Nikishin, ...
Applied physics letters 69 (23), 3566-3568, 1996
146 1996 Raman studies of nitrogen incorporation in T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu, S Nikishin, H Temkin
Applied physics letters 73 (10), 1409-1411, 1998
133 1998 Vibrational properties of AlN grown on (111)-oriented silicon T Prokofyeva, M Seon, J Vanbuskirk, M Holtz, SA Nikishin, NN Faleev, ...
Physical Review B 63 (12), 125313, 2001
121 2001 Si-doped AlxGa1− xN (0.56⩽×⩽ 1) layers grown by molecular beam epitaxy with ammonia B Borisov, V Kuryatkov, Y Kudryavtsev, R Asomoza, S Nikishin, DY Song, ...
Applied physics letters 87 (13), 2005
118 2005 H Harris, K Choi, N Mehta, A Chandolu, N Biswas, G Kipshidze, ...
Applied physics letters 81 (6), 1065-1067, 2002
118 2002 AlN/AlGaInN superlattice light-emitting diodes at 280 nm G Kipshidze, V Kuryatkov, K Zhu, B Borisov, M Holtz, S Nikishin, H Temkin
Journal of applied physics 93 (3), 1363-1366, 2003
111 2003 Excitons bound to nitrogen clusters in GaAsN S Francoeur, SA Nikishin, C Jin, Y Qiu, H Temkin
Applied physics letters 75 (11), 1538-1540, 1999
110 1999 AlGaInN-based ultraviolet light-emitting diodes grown on Si (111) G Kipshidze, V Kuryatkov, B Borisov, M Holtz, S Nikishin, H Temkin
Applied Physics Letters 80 (20), 3682-3684, 2002
109 2002 Ordering effects in Raman spectra of coherently strained GaAs 1− x N x AM Mintairov, PA Blagnov, VG Melehin, NN Faleev, JL Merz, Y Qiu, ...
Physical Review B 56 (24), 15836, 1997
106 1997 High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
100 1999 Method of epitaxial growth of high quality nitride layers on silicon substrates H Temkin, SA Nikishin
US Patent 6,391,748, 2002
97 2002 Selective growth of high quality GaN on Si (111) substrates M Seon, T Prokofyeva, M Holtz, SA Nikishin, NN Faleev, H Temkin
Applied physics letters 76 (14), 1842-1844, 2000
96 2000 The anodization voltage influence on the properties ofTiO2 nanotubes grown by electrochemical oxidation Y Alivov, M Pandikunta, S Nikishin, ZY Fan
Nanotechnology 20 (22), 225602, 2009
87 2009 Composition dependence of the optical phonon energies in hexagonal M Holtz, T Prokofyeva, M Seon, K Copeland, J Vanbuskirk, S Williams, ...
Journal of applied Physics 89 (12), 7977-7982, 2001
84 2001 Mg and O codoping in p -type GaN and G Kipshidze, V Kuryatkov, B Borisov, Y Kudryavtsev, R Asomoza, ...
Applied physics letters 80 (16), 2910-2912, 2002
74 2002 Evolution of surface roughness of AlN and GaN induced by inductively coupled K Zhu, V Kuryatkov, B Borisov, J Yun, G Kipshidze, SA Nikishin, H Temkin, ...
Journal of applied physics 95 (9), 4635-4641, 2004
73 2004 Growth of single phase Y Qiu, SA Nikishin, H Temkin, NN Faleev, YA Kudriavtsev
Applied physics letters 70 (24), 3242-3244, 1997
71 1997 Thermodynamic considerations in epitaxial growth of Y Qiu, SA Nikishin, H Temkin, VA Elyukhin, YA Kudriavtsev
Applied physics letters 70 (21), 2831-2833, 1997
71 1997 