| Flexible active-matrix electronic ink display Y Chen, J Au, P Kazlas, A Ritenour, H Gates, M McCreary Nature 423 (6936), 136-136, 2003 | 741 | 2003 |
| Backplanes for display applications, and components for use therein KR Amundson, Y Chen, KL Denis, PS Drzaic, PT Kazlas, AP Ritenour US Patent 7,116,318, 2006 | 583 | 2006 |
| Method for forming an interface between germanium and other materials A Ritenour US Patent App. 11/251,089, 2006 | 417 | 2006 |
| Processes for forming backplanes for electro-optic displays PT Kazlas, NR Kane, AP Ritenour US Patent 7,223,672, 2007 | 284 | 2007 |
| Electro-optic displays, and components for use therein KR Amundson, AP Ritenour, GM Duthaler, PS Drzaic, Y Chen, PT Kazlas US Patent 7,190,008, 2007 | 213 | 2007 |
| Backplanes for display applications, and components for use therein KR Amundson, Y Chen, KL Denis, PS Drzaic, PT Kazlas, AP Ritenour US Patent 7,605,799, 2009 | 193 | 2009 |
| Epitaxial strained germanium p-MOSFETs with HfO 2 gate dielectric and TaN gate electrode A Ritenour, S Yu, ML Lee, N Lu, W Bai, A Pitera, EA Fitzgerald, DL Kwong, ... Technical Digest-International Electron Devices Meeting, 433-436, 2003 | 192 | 2003 |
| Processes for forming backplanes for electro-optic displays KR Amundson, GM Danner, GM Duthaler, PT Kazlas, Y Chen, KL Denis, ... US Patent 7,442,587, 2008 | 174 | 2008 |
| Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric N Lu, W Bai, A Ramirez, C Mouli, A Ritenour, ML Lee, D Antoniadis, ... Applied Physics Letters 87 (5), 2005 | 162 | 2005 |
| Electro-optic displays, and components for use therein AP Ritenour, GM Duthaler US Patent 7,598,173, 2009 | 129 | 2009 |
| Ge MOS characteristics with CVD HfO/sub 2/gate dielectrics and TaN gate electrode WP Bai, N Lu, J Liu, A Ramirez, DL Kwong, D Wristers, A Ritenour, L Lee, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003 | 124 | 2003 |
| Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks KH Kim, RG Gordon, A Ritenour, DA Antoniadis Applied physics letters 90 (21), 2007 | 95 | 2007 |
| Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack A Ritenour, A Khakifirooz, DA Antoniadis, RZ Lei, W Tsai, A Dimoulas, ... Applied physics letters 88 (13), 2006 | 85 | 2006 |
| Processes for forming backplanes for electro-optic displays KR Amundson, GM Danner, GM Duthaler, PT Kazlas, Y Chen, KL Denis, ... US Patent 7,785,988, 2010 | 77 | 2010 |
| Ge n-mosfets on lightly doped substrates with high-/spl kappa/dielectric and tan gate WP Bai, N Lu, A Ritenour, ML Lee, DA Antoniadis, DL Kwong IEEE electron device letters 27 (3), 175-178, 2006 | 73 | 2006 |
| Improved two-stage DC-coupled gate driver for enhancement-mode SiC JFET R Kelley, A Ritenour, D Sheridan, J Casady 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and …, 2010 | 70 | 2010 |
| Processes for forming backplanes for electro-optic displays KR Amundson, GM Danner, GM Duthaler, PT Kazlas, Y Chen, KL Denis, ... US Patent 8,389,381, 2013 | 60 | 2013 |
| Electro-optic displays, and components for use therein KR Amundson, AP Ritenour, GM Duthaler, PS Drzaic, Y Chen, PT Kazlas US Patent App. 12/552,334, 2009 | 60 | 2009 |
| Record 2.8mΩ-cm21.9kV enhancement-mode SiC VJFETs DC Sheridan, A Ritenour, V Bondarenko, P Burks, JB Casady 2009 21st International Symposium on Power Semiconductor Devices & IC's, 335-338, 2009 | 59 | 2009 |
| Ultra-low loss 600V-1200V GaN power transistors for high efficiency applications DC Sheridan, DY Lee, A Ritenour, V Bondarenko, J Yang, C Coleman PCIM Europe 2014; International Exhibition and Conference for Power …, 2014 | 48 | 2014 |
