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Sashikanth Majety
Sashikanth Majety
Engineering Technology Development Manager, Intel Corporation
Dirección de correo verificada de intel.com - Página principal
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Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
R Dahal, J Li, S Majety, BN Pantha, XK Cao, JY Lin, HX Jiang
Applied physics letters 98 (21), 2011
2352011
Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
J Li, S Majety, R Dahal, WP Zhao, JY Lin, HX Jiang
Applied physics letters 101 (17), 2012
1712012
Epitaxial growth and demonstration of hexagonal BN/AlGaN pn junctions for deep ultraviolet photonics
S Majety, J Li, XK Cao, R Dahal, BN Pantha, JY Lin, HX Jiang
Applied Physics Letters 100 (6), 2012
1382012
Hexagonal boron nitride epitaxial layers as neutron detector materials
J Li, R Dahal, S Majety, JY Lin, HX Jiang
Nuclear instruments and methods in physics research section a: accelerators …, 2011
1312011
Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers
TC Doan, S Majety, S Grenadier, J Li, JY Lin, HX Jiang
Nuclear instruments and methods in physics research section a: accelerators …, 2014
802014
Band-edge transitions in hexagonal boron nitride epilayers
S Majety, XK Cao, J Li, R Dahal, JY Lin, HX Jiang
Applied physics letters 101 (5), 2012
642012
Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products
TC Doan, S Majety, S Grenadier, J Li, JY Lin, HX Jiang
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015
612015
Electrical transport properties of Si-doped hexagonal boron nitride epilayers
S Majety, TC Doan, J Li, JY Lin, HX Jiang
AIP Advances 3 (12), 2013
572013
Hexagonal boron nitride and 6H-SiC heterostructures
S Majety, J Li, WP Zhao, B Huang, SH Wei, JY Lin, HX Jiang
Applied Physics Letters 102 (21), 2013
542013
Layer-structured hexagonal (BN) C semiconductor alloys with tunable optical and electrical properties
MR Uddin, S Majety, J Li, JY Lin, HX Jiang
Journal of Applied Physics 115 (9), 2014
522014
Semiconducting hexagonal boron nitride for deep ultraviolet photonics
S Majety, XK Cao, R Dahal, BN Pantha, J Li, JY Lin, HX Jiang
Quantum Sensing and Nanophotonic Devices IX 8268, 607-614, 2012
372012
Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures
H Jiang, S Majety, R Dahal, J Li, J Lin
US Patent 9,093,581, 2015
202015
Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures
H Jiang, S Majety, R Dahal, J Li, J Lin
US Patent App. 13/464,977, 2013
202013
Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers
S Majety, J Li, XK Cao, R Dahal, JY Lin, HX Jiang
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV 8507, 91-99, 2012
122012
Optoelectronic properties of hexagonal boron nitride epilayers
XK Cao, S Majety, J Li, JY Lin, HX Jiang
Quantum Sensing and Nanophotonic Devices X 8631, 441-449, 2013
32013
Charge Carrier Transport Properties in Layered Structure of Hexagonal Boron Nitride (-BN) and Thermal Neutron Detection Based on -BN
T Doan, S Grenadier, S Majety, J Li, J Lin, H Jiang
Bulletin of the American Physical Society 60, 2015
2015
Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
S Majety
2014
MOCVD grown hexagonal BN epilayers for DUV photonics
S Majety, J Li, J Lin, H Jiang
APS March Meeting Abstracts 2013, Z21. 014, 2013
2013
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
HX Jiang, JY Lin, BN Pantha, XK Cao, S Majety, J Li, R Dahal
American Institute of Physics, 2011
2011
Structural and Optical properties of Si-doped AlN
S Majety, B Pantha, A Sedhain, J Li, H Jiang, J Lin
APS March Meeting Abstracts 2011, A12. 007, 2011
2011
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