| Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization J Wang, L Wang, W Zhao, Z Hao, Y Luo Applied Physics Letters 97 (20), 2010 | 143 | 2010 |
| Van der Waals epitaxy of iii‐nitride semiconductors based on 2D materials for flexible applications J Yu, L Wang, Z Hao, Y Luo, C Sun, J Wang, Y Han, B Xiong, H Li Advanced Materials 32 (15), 1903407, 2020 | 110 | 2020 |
| Integrated High-Q Crystalline AlN Microresonators for Broadband Kerr and Raman Frequency Combs X Liu, C Sun, B Xiong, L Wang, J Wang, Y Han, Z Hao, H Li, Y Luo, J Yan, ... ACS Photonics 5 (5), 1943-1950, 2018 | 95 | 2018 |
| Integrated gallium nitride nonlinear photonics Y Zheng, C Sun, B Xiong, L Wang, Z Hao, J Wang, Y Han, H Li, J Yu, ... Laser & Photonics Reviews 16 (1), 2100071, 2022 | 94 | 2022 |
| An InP-based vortex beam emitter with monolithically integrated laser J Zhang, C Sun, B Xiong, J Wang, Z Hao, L Wang, Y Han, H Li, Y Luo, ... Nature Communications 9 (1), 2652, 2018 | 70 | 2018 |
| Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN W Zhao, L Wang, J Wang, Z Hao, Y Luo Journal of Crystal Growth 327 (1), 202-204, 2011 | 68 | 2011 |
| 1.3 GHz EO bandwidth GaN-based micro-LED for multi-gigabit visible light communication L Wang, Z Wei, CJ Chen, L Wang, HY Fu, L Zhang, KC Chen, MC Wu, ... Photonics Research 9 (5), 792-802, 2021 | 67 | 2021 |
| Integrated continuous-wave aluminum nitride Raman laser X Liu, C Sun, B Xiong, L Wang, J Wang, Y Han, Z Hao, H Li, Y Luo, J Yan, ... Optica 4 (8), 893-896, 2017 | 67 | 2017 |
| Green InGaN quantum dots breaking through efficiency and bandwidth bottlenecks of micro‐LEDs L Wang, L Wang, CJ Chen, KC Chen, Z Hao, Y Luo, C Sun, MC Wu, J Yu, ... Laser & Photonics Reviews 15 (5), 2000406, 2021 | 64 | 2021 |
| Aluminum nitride-on-sapphire platform for integrated high-Q microresonators X Liu, C Sun, B Xiong, L Wang, J Wang, Y Han, Z Hao, H Li, Y Luo, J Yan, ... Optics express 25 (2), 587-594, 2017 | 64 | 2017 |
| Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis X Meng, L Wang, Z Hao, Y Luo, C Sun, Y Han, B Xiong, J Wang, H Li Applied Physics Letters 108 (1), 2016 | 63 | 2016 |
| A review on experimental measurements for understanding efficiency droop in InGaN-based light-emitting diodes L Wang, J Jin, C Mi, Z Hao, Y Luo, C Sun, Y Han, B Xiong, J Wang, H Li Materials 10 (11), 1233, 2017 | 62 | 2017 |
| Abnormal Stranski–Krastanov mode growth of green InGaN quantum dots: morphology, optical properties, and applications in light-emitting devices L Wang, L Wang, J Yu, Z Hao, Y Luo, C Sun, Y Han, B Xiong, J Wang, ... ACS applied materials & interfaces 11 (1), 1228-1238, 2018 | 59 | 2018 |
| An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes J Wang, L Wang, L Wang, Z Hao, Y Luo, A Dempewolf, M Müller, ... Journal of Applied Physics 112 (2), 2012 | 59 | 2012 |
| 2 Gbps/3 m air–underwater optical wireless communication based on a single-layer quantum dot blue micro-LED Z Wei, L Zhang, L Wang, CJ Chen, A Pepe, X Liu, KC Chen, MC Wu, ... Optics Letters 45 (9), 2616-2619, 2020 | 55 | 2020 |
| Encapsulation-enabled perovskite–PMMA films combining a micro-led for high-speed white-light communication Z Wang, Z Wei, Y Cai, L Wang, M Li, P Liu, R Xie, L Wang, G Wei, HY Fu ACS Applied Materials & Interfaces 13 (45), 54143-54151, 2021 | 54 | 2021 |
| A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ... Applied Physics Letters 109 (24), 2016 | 52 | 2016 |
| Wideband thin-film lithium niobate modulator with low half-wave-voltage length product X Liu, B Xiong, C Sun, J Wang, Z Hao, L Wang, Y Han, H Li, J Yu, Y Luo Chinese Optics Letters 19 (6), 060016, 2021 | 50 | 2021 |
| Graphene on Self‐Assembled InGaN Quantum Dots Enabling Ultrahighly Sensitive Photodetectors A Hu, H Tian, Q Liu, L Wang, L Wang, X He, Y Luo, X Guo Advanced Optical Materials 7 (8), 1801792, 2019 | 46 | 2019 |
| InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers W Lv, L Wang, J Wang, Z Hao, Y Luo Nanoscale research letters 7 (1), 617, 2012 | 42* | 2012 |
Bing XIONGTsinghua UniversityDirección de correo verificada de mail.tsinghua.edu.cn