Seguir
Abhijeet paul
Abhijeet paul
Graduate Student Purdue University, Device Engineer Globalfoundries
Dirección de correo verificada de globalfoundries.com
Título
Citado por
Citado por
Año
Bandstructure effects in silicon nanowire electron transport
N Neophytou, A Paul, MS Lundstrom, G Klimeck
IEEE Transactions on Electron Devices 55 (6), 1286-1297, 2008
2192008
Spin-based computing: Device concepts, current status, and a case study on a high-performance microprocessor
J Kim, A Paul, PA Crowell, SJ Koester, SS Sapatnekar, JP Wang, CH Kim
Proceedings of the IEEE 103 (1), 106-130, 2014
1862014
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI
KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
1112014
Full three-dimensional quantum transport simulation of atomistic interface roughness in silicon nanowire FETs
SG Kim, M Luisier, A Paul, TB Boykin, G Klimeck
IEEE Transactions on Electron Devices 58 (5), 1371-1380, 2011
772011
Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires: Methodology and computational details
A Paul, M Luisier, G Klimeck
Journal of computational electronics 9, 160-172, 2010
772010
Effects of deposition parameters on the properties of chromium carbide coatings deposited onto steel by sputtering
A Paul, J Lim, K Choi, C Lee
Materials Science and Engineering: A 332 (1-2), 123-128, 2002
682002
Bandstructure effects in silicon nanowire hole transport
N Neophytou, A Paul, G Klimeck
IEEE Transactions on Nanotechnology 7 (6), 710-719, 2008
672008
Simulations of nanowire transistors: Atomistic vs. effective mass models
N Neophytou, A Paul, MS Lundstrom, G Klimeck
Journal of Computational Electronics 7, 363-366, 2008
452008
Atomistic approach to alloy scattering in Si1− xGex
SR Mehrotra, A Paul, G Klimeck
Applied Physics Letters 98 (17), 2011
422011
FinFET channel stress using tungsten contacts in raised epitaxial source and drain
A Paul, A Bello, VK Kamineni, D Deniz
US Patent 8,975,142, 2015
382015
Enhanced valence force field model for the lattice properties of gallium arsenide
S Steiger, M Salmani-Jelodar, D Areshkin, A Paul, T Kubis, M Povolotskyi, ...
Physical Review B—Condensed Matter and Materials Physics 84 (15), 155204, 2011
382011
Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-Fin SOI FINFETs
A Paul, A Bryant, TB Hook, CC Yeh, V Kamineni, JB Johnson, N Tripathi, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 13.5. 1-13.5. 4, 2013
362013
Comprehensive simulation of program, erase and retention in charge trapping flash memories
A Paul, C Sridhar, S Gedam, S Mahapatra
2006 International Electron Devices Meeting, 1-4, 2006
332006
Methods of forming stressed multilayer FinFET devices with alternative channel materials
A Paul, AP Jacob, MH Chi
US Patent 9,023,705, 2015
312015
Performance prediction of ultrascaled SiGe/Si core/shell electron and hole nanowire MOSFETs
A Paul, S Mehrotra, M Luisier, G Klimeck
IEEE electron device letters 31 (4), 278-280, 2010
312010
Atomistic study of electronic structure of PbSe nanowires
A Paul, G Klimeck
Applied Physics Letters 98 (21), 2011
272011
Intrinsic reliability improvement in biaxially strained SiGe p-MOSFETs
S Deora, A Paul, R Bijesh, J Huang, G Klimeck, G Bersuker, PD Krisch, ...
IEEE electron device letters 32 (3), 255-257, 2011
252011
On the validity of the top of the barrier quantum transport model for ballistic nanowire MOSFETs
A Paul, S Mehrotra, G Klimeck, M Luisier
2009 13th International Workshop on Computational Electronics, 1-4, 2009
252009
FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming
MH Chi, A Jacob, A Paul
US Patent 9,362,277, 2016
222016
Band structure lab
A Paul, M Luisier, N Neophytou, R Kim, J Geng, M McLennan, ...
doi, 2006
222006
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20