| IEEE T-ED A Asenov K46, 1718, 1999 | 854* | 1999 |
| Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness A Asenov, S Kaya, AR Brown IEEE Transactions on Electron Devices 50 (5), 1254-1260, 2003 | 747 | 2003 |
| Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs A Asenov, AR Brown, JH Davies, S Kaya, G Slavcheva IEEE transactions on electron devices 50 (9), 1837-1852, 2003 | 735 | 2003 |
| 1 μm gate length, In 0.75 Ga0. 25 As channel, thin body n-MOSFET on InP substrate with transconductance of 737 μm RJW Hill, R Droopad, DAJ Moran, X Li, H Zhou, D Macintyre, S Thorns, ... Electronics Letters 44 (7), 498-500, 2008 | 705* | 2008 |
| Design and fabrication of memory devices based on nanoscale polyoxometalate clusters C Busche, L Vila-Nadal, J Yan, HN Miras, DL Long, VP Georgiev, ... Nature 515 (7528), 545-549, 2014 | 346 | 2014 |
| Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs G Roy, AR Brown, F Adamu-Lema, S Roy, A Asenov IEEE Transactions on Electron Devices 53 (12), 3063-3070, 2006 | 336 | 2006 |
| RTS amplitudes in decananometer MOSFETs: 3-D simulation study A Asenov, R Balasubramaniam, AR Brown, JH Davies IEEE Transactions on Electron Devices 50 (3), 839-845, 2003 | 326 | 2003 |
| Statistical variability and reliability in nanoscale FinFETs X Wang, AR Brown, B Cheng, A Asenov 2011 International electron devices meeting, 5.4. 1-5.4. 4, 2011 | 322 | 2011 |
| Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations A Asenov, S Kaya, JH Davies IEEE Transactions on electron devices 49 (1), 112-119, 2002 | 288 | 2002 |
| Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: A 3-D density-gradient simulation study A Asenov, G Slavcheva, AR Brown, JH Davies, S Saini Electron Devices, IEEE Transactions on 48 (4), 722-729, 2001 | 279 | 2001 |
| Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-/spl mu/m MOSFET's with epitaxial and/spl delta/-doped channels A Asenov, S Saini IEEE Transactions on Electron Devices 46 (8), 1718-1724, 1999 | 237 | 1999 |
| Enhancement-Mode GaAs MOSFETs With an In0. 3 Ga0. 7As Channel, a Mobility of Over 5000 cm2/V· s, and Transconductance of Over 475 μS/μm RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ... Electron Device Letters, IEEE 28 (12), 1080-1082, 2007 | 230 | 2007 |
| Si/SiGe heterostructure parameters for device simulations L Yang, JR Watling, RCW Wilkins, M Boriçi, JR Barker, A Asenov, S Roy Semiconductor science and technology 19, 1174, 2004 | 224 | 2004 |
| A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs A Martinez, M Bescond, JR Barker, A Svizhenko, MP Anantram, C Millar, ... IEEE Transactions on Electron Devices 54 (9), 2213-2222, 2007 | 175 | 2007 |
| Poly-Si-gate-related variability in decananometer MOSFETs with conventional architecture AR Brown, G Roy, A Asenov IEEE Transactions on Electron Devices 54 (11), 3056-3063, 2007 | 164 | 2007 |
| Simulation of statistical variability in nano MOSFETs A Asenov 2007 IEEE symposium on VLSI technology, 86-87, 2007 | 158 | 2007 |
| Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study X Wang, AR Brown, N Idris, S Markov, G Roy, A Asenov Electron Devices, IEEE Transactions on 58 (8), 2293-2301, 2011 | 156 | 2011 |
| Where do the dopants go? S Roy, A Asenov Science 309 (5733), 388, 2005 | 154 | 2005 |
| Impact of metal gate granularity on threshold voltage variability: A full-scale three-dimensional statistical simulation study AR Brown, NM Idris, JR Watling, A Asenov IEEE Electron Device Letters 31 (11), 1199-1201, 2010 | 139 | 2010 |
| Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter AR Brown, A Asenov, JR Watling IEEE Transactions on Nanotechnology 1 (4), 195-200, 2002 | 123 | 2002 |