Photooxidation and quantum confinement effects in exfoliated black phosphorus A Favron, E Gaufrès, F Fossard, AL Phaneuf-L’Heureux, NYW Tang, ...
Nature materials 14 (8), 826-832, 2015
1358 2015 Molecular beam epitaxy growth of S Tixier, M Adamcyk, T Tiedje, S Francoeur, A Mascarenhas, P Wei, ...
Applied physics letters 82 (14), 2245-2247, 2003
540 2003 Band gap of S Francoeur, MJ Seong, A Mascarenhas, S Tixier, M Adamcyk, T Tiedje
Applied physics letters 82 (22), 3874-3876, 2003
524 2003 Giant Spin-Orbit Bowing in B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje
Physical review letters 97 (6), 067205, 2006
514 2006 High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ...
Applied physics letters 75 (14), 2073-2075, 1999
297 1999 Luminescence of as-grown and thermally annealed GaAsN/GaAs S Francoeur, G Sivaraman, Y Qiu, S Nikishin, H Temkin
Applied physics letters 72 (15), 1857-1859, 1998
192 1998 Excitons bound to nitrogen clusters in GaAsN S Francoeur, SA Nikishin, C Jin, Y Qiu, H Temkin
Applied physics letters 75 (11), 1538-1540, 1999
110 1999 Bi isoelectronic impurities in GaAs S Francoeur, S Tixier, E Young, T Tiedje, A Mascarenhas
Physical Review B—Condensed Matter and Materials Physics 77 (8), 085209, 2008
107 2008 High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
100 1999 Band gaps of the dilute quaternary alloys GaNxAs1− x− yBiy and Ga1− yInyNxAs1− x S Tixier, SE Webster, EC Young, T Tiedje, S Francoeur, A Mascarenhas, ...
Applied Physics Letters 86 (11), 2005
95 2005 Mid-infrared polarized emission from black phosphorus light-emitting diodes J Wang, A Rousseau, M Yang, T Low, S Francoeur, S Kéna-Cohen
Nano letters 20 (5), 3651-3655, 2020
92 2020 Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy A Bergeron, J Ibrahim, R Leonelli, S Francoeur
Applied physics letters 110 (24), 2017
85 2017 Polarization-resolved raman study of bulk-like and davydov-induced vibrational modes of exfoliated black phosphorus AL Phaneuf-L’Heureux, A Favron, JF Germain, P Lavoie, P Desjardins, ...
Nano Letters 16 (12), 7761-7767, 2016
85 2016 Optical spectroscopy of single impurity centers in semiconductors S Francoeur, JF Klem, A Mascarenhas
Physical review letters 93 (6), 067403, 2004
82 2004 Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2 P St-Jean, GA Seryogin, S Francoeur
Applied Physics Letters 96 (23), 2010
53 2010 Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects A Favron, E Gaufres, F Fossard, PL Lévesque, AL Phaneuf-L'Heureux, ...
arXiv preprint arXiv:1408.0345, 2014
52 2014 Phonon engineering in isotopically disordered silicon nanowires S Mukherjee, U Givan, S Senz, A Bergeron, S Francoeur, M De La Mata, ...
Nano letters 15 (6), 3885-3893, 2015
49 2015 Second-order Raman scattering in exfoliated black phosphorus A Favron, FA Goudreault, V Gosselin, J Groulx, M Côté, R Leonelli, ...
Nano letters 18 (2), 1018-1027, 2018
47 2018 Bi-induced vibrational modes in GaAsBi MJ Seong, S Francoeur, S Yoon, A Mascarenhas, S Tixier, M Adamcyk, ...
Superlattices and Microstructures 37 (6), 394-400, 2005
39 2005 Initiation and evolution of phase separation in heteroepitaxial InAlAs films B Shin, A Lin, K Lappo, RS Goldman, MC Hanna, S Francoeur, ...
Applied physics letters 80 (18), 3292-3294, 2002
35 2002 
Richard MartelProfessor of Chemistry, Universite de MontrealDirección de correo verificada de umontreal.ca
