| Modeling statistical dopant fluctuations in MOS transistors PA Stolk, FP Widdershoven, DBM Klaassen IEEE Transactions on Electron devices 45 (9), 1960-1971, 1998 | 560 | 1998 |
| Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays C Laborde, F Pittino, HA Verhoeven, SG Lemay, L Selmi, MA Jongsma, ... Nature nanotechnology 10 (9), 791-795, 2015 | 166 | 2015 |
| Closed-and open-boundary models for gate-current calculation in n-MOSFETs A Dalla Serra, A Abramo, P Palestri, L Selmi, F Widdershoven IEEE Transactions on Electron Devices 48 (8), 1811-1815, 2001 | 70 | 2001 |
| A CMOS pixelated nanocapacitor biosensor platform for high-frequency impedance spectroscopy and imaging F Widdershoven, A Cossettini, C Laborde, A Bandiziol, PP van Swinderen, ... IEEE transactions on biomedical circuits and systems 12 (6), 1369-1382, 2018 | 68 | 2018 |
| Amiware: Hardware technology drivers of ambient intelligence S Mukherjee, E Aarts, R Roovers, F Widdershoven, M Ouwerkerk Springer Science & Business Media, 2006 | 46 | 2006 |
| CMOS biosensor platform F Widdershoven, D Van Steenwinckel, J Überfeld, T Merelle, H Suy, ... 2010 International Electron Devices Meeting, 36.1. 1-36.1. 4, 2010 | 45 | 2010 |
| Examination of the Si (111) SiO2, Si (110) SiO2, and Si (100) SiO2 interfacial properties following rapid thermal annealing PK Hurley, BJ O’Sullivan, FN Cubaynes, PA Stolk, FP Widdershoven, ... Journal of the Electrochemical Society 149 (3), G194, 2002 | 43 | 2002 |
| High-frequency nanocapacitor arrays: concept, recent developments, and outlook SG Lemay, C Laborde, C Renault, A Cossettini, L Selmi, ... Accounts of chemical research 49 (10), 2355-2362, 2016 | 40 | 2016 |
| Device modeling of statistical dopant fluctuations in MOS transistors PA Stolk, FP Widdershoven, DBM Klaassen SISPAD'97. 1997 International Conference on Simulation of Semiconductor …, 1997 | 35 | 1997 |
| IEEE Trans. Electron Devices PA Stolk, FP Widdershoven, DBM Klaassen IEEE Trans. Electron Devices 45 (9), 1960-1971, 1998 | 29 | 1998 |
| Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements F Pittino, L Selmi, F Widdershoven Solid-state electronics 88, 82-88, 2013 | 23 | 2013 |
| Derivation and numerical verification of a compact analytical model for the AC admittance response of nanoelectrodes, suitable for the analysis and optimization of impedance … F Pittino, P Scarbolo, F Widdershoven, L Selmi IEEE Transactions on Nanotechnology 14 (4), 709-716, 2015 | 20 | 2015 |
| Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays E Vianello, F Driussi, D Esseni, L Selmi, F Widdershoven, MJ van Duuren IEEE transactions on electron devices 54 (8), 1953-1962, 2007 | 19 | 2007 |
| Numerical simulation of the position and orientation effects on the impedance response of nanoelectrode array biosensors to DNA and PNA strands F Pittino, F Passerini, L Selmi, F Widdershoven Microelectronics Journal 45 (12), 1695-1700, 2014 | 18 | 2014 |
| On ambient intelligence, needful things and process technologies C van der Poel, F Pessolano, R Roovers, F Widdershoven, ... Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004 | 17 | 2004 |
| Flat band voltage shift and oxide properties after rapid thermal annealing BJ O'Sullivan, PK Hurley, FN Cubaynes, PA Stolk, FP Widdershoven Microelectronics Reliability 41 (7), 1053-1056, 2001 | 16 | 2001 |
| Investigation of the energy distribution of stress-induced oxide traps by numerical analysis of the TAT of HEs F Driussi, R Iob, D Esseni, L Selmi, R van Schaijk, F Widdershoven IEEE transactions on electron devices 51 (10), 1570-1576, 2004 | 15 | 2004 |
| A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors P Palestri, AD Serra, L Selmi, M Pavesi, PL Rigolli, A Abramo, ... IEEE Transactions on Electron Devices 49 (8), 1427-1435, 2002 | 14 | 2002 |
| Experimental characterization of statistically independent defects in gate dielectrics-Part I: Description and Validation of the Model F Driussi, F Widdershoven, D Esseni, L Selmi, MJ van Duuren IEEE transactions on electron devices 52 (5), 942-948, 2005 | 13 | 2005 |
| Cathode hot electrons and anode hot holes in tunneling MOS capacitors P Palestri, L Selmi, E Sangiorgi, M Pavesi, F Widdershoven Proceedings of the 30th European Solid-State Device Research Conference, 296-299, 2000 | 13 | 2000 |
