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| Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography AM Munshi, DL Dheeraj, VT Fauske, DC Kim, J Huh, JF Reinertsen, ... Nano letters 14 (2), 960-966, 2014 | 177 | 2014 |
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| Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress G Signorello, E Lörtscher, PA Khomyakov, S Karg, DL Dheeraj, ... Nature communications 5 (1), 3655, 2014 | 147 | 2014 |
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| Vertically oriented growth of GaN nanorods on Si using graphene as an atomically thin buffer layer M Heilmann, AM Munshi, G Sarau, M Göbelt, C Tessarek, VT Fauske, ... Nano letters 16 (6), 3524-3532, 2016 | 89 | 2016 |
| Rectifying single GaAsSb nanowire devices based on self-induced compositional gradients J Huh, H Yun, DC Kim, AM Munshi, DL Dheeraj, H Kauko, ... Nano Letters 15 (6), 3709-3715, 2015 | 82 | 2015 |
| Single-mode near-infrared lasing in a GaAsSb-based nanowire superlattice at room temperature D Ren, L Ahtapodov, JS Nilsen, J Yang, A Gustafsson, J Huh, ... Nano letters 18 (4), 2304-2310, 2018 | 78 | 2018 |
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| Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si (111) AM Munshi, DL Dheeraj, J Todorovic, ATJ van Helvoort, H Weman, ... Journal of Crystal Growth 372, 163-169, 2013 | 76 | 2013 |
| New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays D Ren, DL Dheeraj, C Jin, JS Nilsen, J Huh, JF Reinertsen, AM Munshi, ... Nano letters 16 (2), 1201-1209, 2016 | 74 | 2016 |
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