| Silicon-nanowire transistors with intruded nickel-silicide contacts WM Weber, L Geelhaar, AP Graham, E Unger, GS Duesberg, M Liebau, ... Nano letters 6 (12), 2660-2666, 2006 | 322 | 2006 |
| Direct comparison of catalyst-free and catalyst-induced GaN nanowires C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ... Nano Research 3, 528-536, 2010 | 206 | 2010 |
| Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons O Brandt, C Pfüller, C Chèze, L Geelhaar, H Riechert Physical Review B—Condensed Matter and Materials Physics 81 (4), 045302, 2010 | 150 | 2010 |
| Properties of GaN nanowires grown by molecular beam epitaxy L Geelhaar, C Cheze, B Jenichen, O Brandt, C Pfüller, S Münch, ... IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 878-888, 2011 | 142 | 2011 |
| Axial and radial growth of Ni-induced GaN nanowires L Geelhaar, C Cheze, WM Weber, R Averbeck, H Riechert, T Kehagias, ... Applied Physics Letters 91 (9), 2007 | 110 | 2007 |
| Unpinning the Fermi level of GaN nanowires by ultraviolet radiation C Pfüller, O Brandt, F Grosse, T Flissikowski, C Chèze, V Consonni, ... Physical Review B—Condensed Matter and Materials Physics 82 (4), 045320, 2010 | 86 | 2010 |
| In situ investigation of self-induced GaN nanowire nucleation on Si C Chèze, L Geelhaar, A Trampert, H Riechert Applied Physics Letters 97 (4), 2010 | 71 | 2010 |
| Different growth rates for catalyst-induced and self-induced GaN nanowires C Chèze, L Geelhaar, B Jenichen, H Riechert Applied Physics Letters 97 (15), 2010 | 64 | 2010 |
| Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells L Lymperakis, T Schulz, C Freysoldt, M Anikeeva, Z Chen, X Zheng, ... Physical Review Materials 2 (1), 011601, 2018 | 61 | 2018 |
| Silicon to nickel‐silicide axial nanowire heterostructures for high performance electronics WM Weber, L Geelhaar, E Unger, C Chèze, F Kreupl, H Riechert, P Lugli physica status solidi (b) 244 (11), 4170-4175, 2007 | 56 | 2007 |
| Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires O Brandt, S Fernández-Garrido, JK Zettler, E Luna, U Jahn, C Chèze, ... Crystal growth & design 14 (5), 2246-2253, 2014 | 55 | 2014 |
| Collector phase transitions during vapor− solid− solid nucleation of GaN nanowires C Cheze, L Geelhaar, A Trampert, O Brandt, H Riechert Nano letters 10 (9), 3426-3431, 2010 | 55 | 2010 |
| Time-resolved photoluminescence spectroscopy of individual GaN nanowires A Gorgis, T Flissikowski, O Brandt, C Chèze, L Geelhaar, H Riechert, ... Physical Review B—Condensed Matter and Materials Physics 86 (4), 041302, 2012 | 39 | 2012 |
| Silicon nanowires: catalytic growth and electrical characterization WM Weber, GS Duesberg, AP Graham, M Liebau, E Unger, C Cheze, ... physica status solidi (b) 243 (13), 3340-3345, 2006 | 38 | 2006 |
| Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy R Kudrawiec, M Gladysiewicz, L Janicki, J Misiewicz, G Cywinski, ... Applied Physics Letters 100 (18), 2012 | 34 | 2012 |
| Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface H Turski, F Krzyżewski, A Feduniewicz-Żmuda, P Wolny, M Siekacz, ... Applied Surface Science 484, 771-780, 2019 | 33 | 2019 |
| AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy C Skierbiszewski, M Siekacz, H Turski, G Muzioł, M Sawicka, ... Applied physics express 5 (2), 022104, 2012 | 32 | 2012 |
| Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit C Pfüller, O Brandt, T Flissikowski, C Chèze, L Geelhaar, HT Grahn, ... Nano Research 3, 881-888, 2010 | 32 | 2010 |
| In/GaN (0001)-(3× 3) R 30° adsorbate structure as a template for embedded (In, Ga) N/GaN monolayers and short-period superlattices C Chèze, F Feix, M Anikeeva, T Schulz, M Albrecht, H Riechert, O Brandt, ... Applied Physics Letters 110 (7), 2017 | 28 | 2017 |
| Growth mechanisms in semipolar (202¯ 1) and nonpolar m-plane (101¯ 0) algan/gan structures grown by pambe under n-rich conditions M Sawicka, C Cheze, H Turski, J Smalc-Koziorowska, M Kryśko, S Kret, ... Journal of crystal growth 377, 184-191, 2013 | 26 | 2013 |
