Hiroshi AMANO (天野 浩)

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Motoaki IwayaMeijo UniversityDirección de correo verificada de meijo-u.ac.jp
Satoshi KamiyamaMeijo UniversityDirección de correo verificada de meijo-u.ac.jp
Yoshio HondaNagoyaDirección de correo verificada de nuee.nagoya-u.ac.jp
Kazumasa HiramatsuMie University, Emeritus ProfessoreDirección de correo verificada de elec.mie-u.ac.jp
Christian WetzelRensselaer Polytechnic InstituteDirección de correo verificada de ieee.org
Seong Tae-YeonProfessor of Materials Science, Korea UniversityDirección de correo verificada de korea.ac.kr
Plamen P. PaskovLinkoping University, Sweden and ECE NCSU, USADirección de correo verificada de liu.se
Galia PozinaLinköping UniversityDirección de correo verificada de ifm.liu.se
Masataka ImuraNational Institute for Materials ScienceDirección de correo verificada de nims.go.jp
Bruno K MeyerJustus Liebig University GiessenDirección de correo verificada de mailbox.tu-berlin.de
Daisuke IidaKing Abdullah University of Science and Technology (KAUST)Dirección de correo verificada de kaust.edu.sa
Markus PristovsekProf. Nagoya UniversityDirección de correo verificada de imass.nagoya-u.ac.jp
Yasuo KoideNational Institute for Materials Science (NIMS)Dirección de correo verificada de nims.go.jp
Jung HanWilliam Norton Professor of Electrical Engineering, Yale UniversityDirección de correo verificada de yale.edu
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinDirección de correo verificada de tu-berlin.de
Si-Young BaeKorea Institute of Ceramic Engineering and TechnologyDirección de correo verificada de kicet.re.kr
Fernando PonceProfessor of Physics, Arizona State UniversityDirección de correo verificada de asu.edu
Tania PaskovaECE Dept. NCSUDirección de correo verificada de ncsu.edu
Irina BuyanovaProfessor of Physics, Linkoping UniversityDirección de correo verificada de liu.se
Tatiana V. ShubinaChief researcher, Ioffe Institute of RASDirección de correo verificada de beam.ioffe.ru

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Hiroshi AMANO (天野　浩)

Nagoya University (名古屋大学)

Dirección de correo verificada de nuee.nagoya-u.ac.jp - Página principal

Semiconductor devices Opto electronics Power devices High frequency devices photocathode


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer H Amano, N Sawaki, I Akasaki, Y Toyoda Applied Physics Letters 48 (5), 353-355, 1986	3264	1986
P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI) H Amano, M Kito, K Hiramatsu, I Akasaki Japanese journal of applied physics 28 (12A), L2112, 1989	3164	1989
Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells T Takeuchi, S Sota, M Katsuragawa, M Komori, H Takeuchi, HAH Amano, ... Japanese Journal of Applied Physics 36 (4A), L382, 1997	1552	1997
The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018	1195	2018
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE I Akasaki, H Amano, Y Koide, K Hiramatsu, N Sawaki Journal of crystal growth 98 (1-2), 209-219, 1989	1153	1989
The emergence and prospects of deep-ultraviolet light-emitting diode technologies M Kneissl, TY Seong, J Han, H Amano nature photonics 13 (4), 233-244, 2019	1087	2019
Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters IAI Akasaki, HAH Amano Japanese journal of applied physics 36 (9R), 5393, 1997	1056*	1997
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006	835	2006
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect T Takeuchi, C Wetzel, S Yamaguchi, H Sakai, H Amano, I Akasaki, ... Applied physics letters 73 (12), 1691-1693, 1998	825	1998
Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells T Takeuchi, H Amano, I Akasaki Japanese Journal of Applied Physics 39 (2R), 413, 2000	681	2000
Magneto‐optical studies of GaN and GaN/Al_xGa_1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance YJ Wang, R Kaplan, HK Ng, K Doverspike, DK Gaskill, T Ikedo, I Akasaki, ... Journal of applied physics 79 (10), 8007-8010, 1996	605	1996
Shortest wavelength semiconductor laser diode I Akasaki, S Sota, H Sakai, T Tanaka, M Koike, H Amano Electronics Letters 32 (12), 1105-1106, 1996	580	1996
Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN pn junction LED I Akasaki, H Amano, M Kito, K Hiramatsu Journal of luminescence 48, 666-670, 1991	499	1991
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE K Hiramatsu, S Itoh, H Amano, I Akasaki, N Kuwano, T Shiraishi, K Oki Journal of Crystal Growth 115 (1-4), 628-633, 1991	476	1991
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	447	2020
Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection M Hiramatsu, K Shiji, H Amano, M Hori Applied physics letters 84 (23), 4708-4710, 2004	445	2004
Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate H Amano, I Akasaki, K Hiramatsu, N Koide, N Sawaki Thin Solid Films 163, 415-420, 1988	423	1988
Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device I Akasaki, H Amano, S Sota, H Sakai, T Tanaka, M Koike Japanese journal of applied physics 34 (11B), L1517, 1995	417*	1995
Optical properties of strained AlGaN and GaInN on GaN T Takeuchi, H Takeuchi, S Sota, H Sakai, HAH Amano, IAI Akasaki Japanese journal of applied physics 36 (2B), L177, 1997	413	1997
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer A Watanabe, T Takeuchi, K Hirosawa, H Amano, K Hiramatsu, I Akasaki Journal of crystal growth 128 (1-4), 391-396, 1993	396	1993

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