Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
499 2013 High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Y Zhao, S Tanaka, CC Pan, K Fujito, D Feezell, JS Speck, SP DenBaars, ...
Applied physics express 4 (8), 082104, 2011
249 2011 Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ...
Applied Physics Letters 100 (20), 2012
220 2012 High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (2021) GaN substrates S Yamamoto, Y Zhao, CC Pan, RB Chung, K Fujito, J Sonoda, ...
Applied physics express 3 (12), 122102, 2010
220 2010 High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes CC Pan, S Tanaka, F Wu, Y Zhao, JS Speck, S Nakamura, SP DenBaars, ...
Applied Physics Express 5 (6), 062103, 2012
150 2012 Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Y Zhao, H Fu, GT Wang, S Nakamura
Advances in Optics and Photonics 10 (1), 246-308, 2018
148 2018 Nonpolar and semipolar LEDs YR WU, CY HUANG, Y ZHAO, JS SPECK
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies …, 2014
133 * 2014 A Comparative Study on the Electrical Properties of Vertical (2 O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates H Fu, H Chen, X Huang, I Baranowski, J Montes, TH Yang, Y Zhao
IEEE Transactions on Electron Devices 65 (8), 3507-3513, 2018
110 2018 Green Semipolar (20 2 1) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth Y Zhao, SH Oh, F Wu, Y Kawaguchi, S Tanaka, K Fujito, JS Speck, ...
109 2013 High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ...
Applied Physics Letters 99 (5), 051109-051109-3, 2011
108 2011 30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique Y Zhao, J Sonoda, CC Pan, S Brinkley, I Koslow, K Fujito, H Ohta, ...
Applied physics express 3 (10), 102101, 2010
100 2010 Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers H Fu, X Huang, H Chen, Z Lu, I Baranowski, Y Zhao
Applied Physics Letters 111 (15), 2017
94 2017 Demonstration of AlN Schottky barrier diodes with blocking voltage over 1 kV H Fu, I Baranowski, X Huang, H Chen, Z Lu, J Montes, X Zhang, Y Zhao
IEEE Electron Device Letters 38 (9), 1286-1289, 2017
89 2017 Demonstration of mechanically exfoliated β-Ga2O3/GaN pn heterojunction J Montes, C Yang, H Fu, TH Yang, K Fu, H Chen, J Zhou, X Huang, ...
Applied Physics Letters 114 (16), 2019
69 2019 High-power low-droop violet semipolar (303 1) InGaN/GaN light-emitting diodes with thick active layer design DL Becerra, Y Zhao, SH Oh, CD Pynn, K Fujito, SP DenBaars, ...
Applied Physics Letters 105 (17), 2014
69 2014 High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ...
IEEE Electron Device Letters 41 (1), 127-130, 2019
67 2019 Investigation of GaN-on-GaN vertical pn diode with regrown p-GaN by metalorganic chemical vapor deposition K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ...
Applied physics letters 113 (23), 2018
66 2018 High performance vertical GaN-on-GaN pn power diodes with hydrogen-plasma-based edge termination H Fu, K Fu, X Huang, H Chen, I Baranowski, TH Yang, J Montes, Y Zhao
IEEE Electron Device Letters 39 (7), 1018-1021, 2018
66 2018 Thermally enhanced blue light-emitting diode J Xue, Y Zhao, SH Oh, WF Herrington, JS Speck, SP DenBaars, ...
Applied Physics Letters 107 (12), 2015
64 2015 Demonstration of 1.27 kV Etch-Then-Regrow GaN K Fu, H Fu, X Huang, H Chen, TH Yang, J Montes, C Yang, J Zhou, ...
IEEE Electron Device Letters 40 (11), 1728-1731, 2019
63 2019 
Houqiang FuAssistant Professor, School of ECEE, Arizona State UniversityDirección de correo verificada de asu.edu
