Ultra-wide bandgap semiconductor Ga2O3 power diodes J Zhang, P Dong, K Dang, Y Zhang, Q Yan, H Xiang, J Su, Z Liu, M Si, ...
Nature Communications 13 (1), 1-8, 2022
354 2022 Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios
IEEE Transactions on Electron Devices 60 (7), 2224-2230, 2013
199 2013 Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
174 2017 Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2018
156 2018 Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 113506, 2011
144 2011 Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al 2 O … ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
Applied Physics Letters 95 (22), 223501, 2009
133 2009 High-Performance Vertical 2 O3 Schottky Barrier Diode With Implanted Edge Termination H Zhou, Q Yan, J Zhang, Y Lv, Z Liu, Y Zhang, K Dang, P Dong, Z Feng, ...
IEEE Electron Device Letters 40 (11), 1788-1791, 2019
119 2019 Demonstration of the p-NiOx /n-Ga2 O3 Heterojunction Gate FETs and Diodes With BV2 /Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2 C Wang, H Gong, W Lei, Y Cai, Z Hu, S Xu, Z Liu, Q Feng, H Zhou, J Ye, ...
IEEE Electron Device Letters 42 (4), 485-488, 2021
118 2021 1200 V GaN vertical fin power field-effect transistors Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2017
117 2017 Trench formation and corner rounding in vertical GaN power devices Y Zhang, M Sun, Z Liu, D Piedra, J Hu, X Gao, T Palacios
Applied Physics Letters 110 (19), 193506, 2017
115 2017 6 kV/3.4 mΩ·cm2 Vertical β-Ga2 O3 Schottky Barrier Diode With BV2 /Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC P Dong, J Zhang, Q Yan, Z Liu, P Ma, H Zhou, Y Hao
IEEE Electron Device Letters 43 (5), 765-768, 2022
114 2022 β-Ga2 O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2 /Ron,sp value of 0.93 GW/cm2 Q Yan, H Gong, J Zhang, J Ye, H Zhou, Z Liu, S Xu, C Wang, Z Hu, ...
Applied Physics Letters 118 (12), 122102, 2021
114 2021 GaN FinFETs and trigate devices for power and RF applications: review and perspective Y Zhang, A Zubair, Z Liu, M Xiao, JA Perozek, Y Ma, T Palacios
Semiconductor Science and Technology, 2021
105 2021 Temperature-dependent forward gate current transport in atomic-layer-deposited ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 163501, 2011
100 2011 InAlN/GaN HEMTs on Si With High W Xing, Z Liu, H Qiu, K Ranjan, Y Gao, GI Ng, T Palacios
IEEE Electron Device Letters 39 (1), 75-78, 2017
94 2017 GaN high electron mobility transistors for sub-millimeter wave applications DS Lee, Z Liu, T Palacios
Japanese Journal of Applied Physics 53 (10), 100212, 2014
94 2014 High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (2), 96-98, 2009
85 2009 Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from− 50 to 200 C ZH Liu, S Arulkumaran, GI Ng
Applied Physics Letters 94 (14), 142105, 2009
81 2009 Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016
76 2016 Improved Linearity for Low-Noise Applications in 0.25- ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (8), 803-805, 2010
75 2010 