| Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films Y Ohuchi, J Matsuno, N Ogawa, Y Kozuka, M Uchida, Y Tokura, ... Nature communications 9 (1), 213, 2018 | 211 | 2018 |
| Topological Hall effect in thin films of the Heisenberg ferromagnet EuO Y Ohuchi, Y Kozuka, M Uchida, K Ueno, A Tsukazaki, M Kawasaki Physical Review B 91 (24), 245115, 2015 | 86 | 2015 |
| Photoinduced sign inversion of the anomalous Hall effect in EuO thin films Y Ohuchi, Y Kozuka, N Rezaei, MS Bahramy, R Arita, K Ueno, ... Physical Review B 89 (12), 121114, 2014 | 10 | 2014 |
| NO Annealing Simulation of 4H-SiC/SiO2 by Charge-Transfer Type Molecular Dynamics Y Ohuchi, H Saeki, H Sakakima, S Izumi Materials Science Forum 1090, 135-139, 2023 | 4 | 2023 |
| Epitaxially Stabilized Oxide Composed of Twisted Triangular-Lattice Layers M Uchida, K Ohba, Y Ohuchi, Y Kozuka, M Kawasaki Chemistry of Materials 28 (4), 1165-1169, 2016 | 3 | 2016 |
| Method for manufacturing nitride semiconductor device and nitride semiconductor device R Tanaka, Y Ohuchi, K Ueno, S Takashima US Patent 12,237,379, 2025 | | 2025 |
| Nitride semiconductor device and method of manufacturing the same Y Ohuchi, K Ueno, R Tanaka, S Takashima US Patent App. 18/606,227, 2024 | | 2024 |
| Surface Oxidation of GaN (0001) Simulated by Charge‐Transfer‐Type Molecular Dynamics Y Ohuchi, H Saeki, H Sakakima, S Izumi physica status solidi (b) 261 (11), 2400030, 2024 | | 2024 |
| Molecular Dynamics Simulation Approach to H2 Etching Process on SiC H Saeki, Y Ohuchi, H Sakakima, S Izumi Scientific Books of Abstracts 8, 472-473, 2024 | | 2024 |
| Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations Y Ohuchi, H Saeki, H Sakakima, S Izumi Defect and Diffusion Forum 434, 93-98, 2024 | | 2024 |
| Nitride semiconductor device K Ueno, Y Ohuchi US Patent 11,837,656, 2023 | | 2023 |
| Nitride semiconductor device Y Ohuchi, K Ueno US Patent 11,830,915, 2023 | | 2023 |
| Method for manufacturing nitride semiconductor device and nitride semiconductor device R Tanaka, Y Ohuchi, K Ueno, S Takashima US Patent App. 17/582,710, 2022 | | 2022 |
| Anomalous Hall effect in perovskite cobalt oxide thin films Y Ohuchi, J Matsuno, Y Kozuka, M Uchida, M Kawasaki APS March Meeting Abstracts 2018, X23. 008, 2018 | | 2018 |