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Peng Xu
Peng Xu
Senior Engineer @ Apple
Dirección de correo verificada de apple.com
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Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ...
2017 symposium on VLSI technology, T230-T231, 2017
9122017
Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element
P Xu, K Cheng, J Li, CH Lee
US Patent 10,522,594, 2019
2712019
Vertical field-effect transistor with uniform bottom spacer
J Li, K Cheng, P Xu, H Wu
US Patent 10,229,985, 2019
2282019
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...
2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016
1912016
Graphene-nanoplatelet-based photomechanical actuators
J Loomis, B King, T Burkhead, P Xu, N Bessler, E Terentjev, ...
Nanotechnology 23 (4), 045501, 2012
1472012
Graphene/elastomer composite-based photo-thermal nanopositioners
J Loomis, X Fan, F Khosravi, P Xu, M Fletcher, RW Cohn, ...
Scientific reports 3 (1), 1900, 2013
1152013
Load transfer and mechanical properties of chemically reduced graphene reinforcements in polymer composites
P Xu, J Loomis, RD Bradshaw, B Panchapakesan
Nanotechnology 23 (50), 505713, 2012
702012
Buffer regions for blocking unwanted diffusion in nanosheet transistors
Z Bi, K Cheng, J Li, P Xu
US Patent 10,263,100, 2019
502019
Closely packed vertical transistors with reduced contact resistance
Z Bi, K Cheng, J Li, P Xu
US Patent 9,735,253, 2017
372017
Transistor with air spacer and self-aligned contact
K Cheng, X Miao, P Xu, C Zhang
US Patent 9,721,897, 2017
362017
Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts
K Cheng, P Xu
US Patent 10,211,302, 2019
322019
Fabrication of an isolated dummy fin between active vertical fins with tight fin pitch
K Cheng, P Xu
US Patent 9,853,131, 2017
322017
Stimuli-responsive transformation in carbon nanotube/expanding microsphere–polymer composites
J Loomis, P Xu, B Panchapakesan
Nanotechnology 24 (18), 185703, 2013
322013
Formation of a partial air-gap spacer
CH Lee, K Cheng, H Wu, P Xu
US Patent 11,011,617, 2021
312021
Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths
K Cheng, J Li, P Xu
US Patent 10,707,208, 2020
312020
Synergy among binary (MWNT, SLG) nano-carbons in polymer nano-composites: a Raman study
P Xu, J Loomis, B King, B Panchapakesan
Nanotechnology 23 (31), 315706, 2012
312012
Photo-mechanical actuation of carbon nanotubes: mechanisms and applications in micro and nano-devices
S Lu, S Ahir, V Velasco, B King, P Xu, EM Terentjev, B Panchapakesan
Journal of Micro-Nano Mechatronics 5, 29-41, 2009
302009
Forming a hybrid channel nanosheet semiconductor structure
P Xu
US Patent 9,704,863, 2017
28*2017
Transistor with improved air spacer
Z Bi, K Cheng, J Li, P Xu
US Patent 9,941,352, 2018
262018
Nanosheet transistors with thin inner spacers and tight pitch gate
K Cheng, CH Lee, J Li, P Xu
US Patent 10,600,889, 2020
252020
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