Hong Zhou

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Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityDirección de correo verificada de purdue.edu
Zhihong LiuXidian University, ChinaDirección de correo verificada de xidian.edu.cn
Mengwei Si（司梦维）Shanghai Jiao Tong UniversityDirección de correo verificada de sjtu.edu.cn
Gang QiuUniversity of MinnesotaDirección de correo verificada de g.ucla.edu
Sami AlghamdiAssociate Professor at King Abdulaziz University - PhD, Purdue UniversityDirección de correo verificada de kau.edu.sa
LINGMING YANGPurdue UniversityDirección de correo verificada de purdue.edu
Yuchen DuGlobalFoundiresDirección de correo verificada de globalfoundries.com
Xiabing LouHarvard UniversityDirección de correo verificada de fas.harvard.edu
Jinhyun NohTexas InstrumentsDirección de correo verificada de ti.com
Geok Ing NgNanyang Technological UniversityDirección de correo verificada de ntu.edu.sg
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityDirección de correo verificada de purdue.edu
Heng WuPurdue UniversityDirección de correo verificada de purdue.edu
Ava J. TanDisplay Electrical Engineer, Apple Inc.Dirección de correo verificada de berkeley.edu
Sayeef SalahuddinTSMC Distinguished Professor of EECS, University of California, BerkeleyDirección de correo verificada de berkeley.edu
Kelson ChabakAir Force Research LaboratoryDirección de correo verificada de us.af.mil
Adam T. NealAir Force Research LabDirección de correo verificada de us.af.mil

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Hong Zhou

Xidian University

Dirección de correo verificada de xidian.edu.cn

GaN Power Device beta-Ga2O3 Power Device Ferroelectric FETs Oxide Semiconductor Devices


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Steep-slope hysteresis-free negative capacitance MoS₂ transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018	535	2018
Ultra-wide bandgap semiconductor Ga₂O₃ power diodes J Zhang, P Dong, K Dang, Y Zhang, Q Yan, H Xiang, J Su, Z Liu, M Si, ... Nature communications 13 (1), 3900, 2022	354	2022
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide IEEE Electron Device Letters 38 (1), 103-106, 2016	318	2016
Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ... ACS nano 11 (10), 10222-10229, 2017	238	2017
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect H Zhou, K Maize, G Qiu, A Shakouri, PD Ye Applied Physics Letters 111 (9), 2017	237	2017
Field-Plated Lateral -Ga₂O₃ Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm² Z Hu, H Zhou, Q Feng, J Zhang, C Zhang, K Dang, Y Cai, Z Feng, Y Gao, ... IEEE Electron Device Letters 39 (10), 1564-1567, 2018	194	2018
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ... IEEE Electron Device Letters 39 (2), 300-303, 2017	172	2017
Progress in state-of-the-art technologies of Ga2O3 devices C Wang, J Zhang, S Xu, C Zhang, Q Feng, Y Zhang, J Ning, S Zhao, ... Journal of Physics D: Applied Physics 54 (24), 243001, 2021	149	2021
Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing H Zhou, S Alghmadi, M Si, G Qiu, DY Peide IEEE Electron Device Letters 37 (11), 1411-1414, 2016	148	2016
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung Applied Physics Letters 98 (11), 2011	144	2011
Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities Y Lv, Y Wang, X Fu, S Dun, Z Sun, H Liu, X Zhou, X Song, K Dang, ... IEEE Transactions on Power Electronics 36 (6), 6179-6182, 2020	143	2020
Lateral β-Ga₂O₃ MOSFETs With High Power Figure of Merit of 277 MW/cm² Y Lv, H Liu, X Zhou, Y Wang, X Song, Y Cai, Q Yan, C Wang, S Liang, ... IEEE Electron Device Letters 41 (4), 537-540, 2020	124	2020
A review of the most recent progresses of state-of-art gallium oxide power devices H Zhou, J Zhang, C Zhang, Q Feng, S Zhao, P Ma, Y Hao Journal of Semiconductors 40 (1), 011803, 2019	120	2019
High-Performance Vertical -Ga₂O₃ Schottky Barrier Diode With Implanted Edge Termination H Zhou, Q Yan, J Zhang, Y Lv, Z Liu, Y Zhang, K Dang, P Dong, Z Feng, ... IEEE Electron Device Letters 40 (11), 1788-1791, 2019	119	2019
Demonstration of the p-NiO_x/n-Ga₂O₃ Heterojunction Gate FETs and Diodes With BV²/R_on,sp Figures of Merit of 0.39 GW/cm² and 1.38 GW/cm² C Wang, H Gong, W Lei, Y Cai, Z Hu, S Xu, Z Liu, Q Feng, H Zhou, J Ye, ... IEEE Electron Device Letters 42 (4), 485-488, 2021	118	2021
6 kV/3.4 mΩ·cm² Vertical β-Ga₂O₃ Schottky Barrier Diode With BV²/R_on,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC P Dong, J Zhang, Q Yan, Z Liu, P Ma, H Zhou, Y Hao IEEE Electron Device Letters 43 (5), 765-768, 2022	114	2022
β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron, sp value of 0.93 GW/cm2 Q Yan, H Gong, J Zhang, J Ye, H Zhou, Z Liu, S Xu, C Wang, Z Hu, ... Applied Physics Letters 118 (12), 2021	114	2021
Thermodynamic Studies of β-Ga₂O₃ Nanomembrane Field-Effect Transistors on a Sapphire Substrate H Zhou, K Maize, J Noh, A Shakouri, PD Ye ACS omega 2 (11), 7723-7729, 2017	103	2017
Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou Applied Physics Letters 98 (16), 2011	100	2011
Recent progress of integrated circuits and optoelectronic chips Y Hao, S Xiang, G Han, J Zhang, X Ma, Z Zhu, X Guo, Y Zhang, Y Han, ... Science China Information Sciences 64 (10), 201401, 2021	99	2021

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