| Resistive switching by voltage-driven ion migration in bipolar RRAM—Part II: Modeling S Larentis, F Nardi, S Balatti, DC Gilmer, D Ielmini IEEE Transactions on Electron Devices 59 (9), 2468-2475, 2012 | 569 | 2012 |
| Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini IEEE Transactions on electron devices 61 (8), 2912-2919, 2014 | 285 | 2014 |
| Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM S Ambrogio, S Balatti, V Milo, R Carboni, ZQ Wang, A Calderoni, ... IEEE Transactions on Electron Devices 63 (4), 1508-1515, 2016 | 257 | 2016 |
| Resistive switching by voltage-driven ion migration in bipolar RRAM—Part I: Experimental study F Nardi, S Larentis, S Balatti, DC Gilmer, D Ielmini IEEE Transactions on Electron Devices 59 (9), 2461-2467, 2012 | 215 | 2012 |
| Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament S Balatti, S Larentis, DC Gilmer, D Ielmini Advanced materials 25 (10), 1474-1478, 2013 | 194 | 2013 |
| Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches S Ambrogio, S Balatti, DC Gilmer, D Ielmini IEEE Transactions on Electron Devices 61 (7), 2378-2386, 2014 | 163 | 2014 |
| Evidence for voltage-driven set/reset processes in bipolar switching RRAM D Ielmini, F Nardi, S Balatti IEEE Transactions on Electron Devices 59 (8), 2049-2056, 2012 | 158 | 2012 |
| Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini IEEE Transactions on Electron Devices 61 (8), 2920-2927, 2014 | 150 | 2014 |
| True random number generation by variability of resistive switching in oxide-based devices S Balatti, S Ambrogio, Z Wang, D Ielmini IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …, 2015 | 148 | 2015 |
| Complementary switching in oxide-based bipolar resistive-switching random memory F Nardi, S Balatti, S Larentis, DC Gilmer, D Ielmini IEEE transactions on electron devices 60 (1), 70-77, 2012 | 142 | 2012 |
| Physical unbiased generation of random numbers with coupled resistive switching devices S Balatti, S Ambrogio, R Carboni, V Milo, Z Wang, A Calderoni, ... IEEE Transactions on Electron Devices 63 (5), 2029-2035, 2016 | 135 | 2016 |
| Spike-timing dependent plasticity in a transistor-selected resistive switching memory S Ambrogio, S Balatti, F Nardi, S Facchinetti, D Ielmini Nanotechnology 24 (38), 384012, 2013 | 134 | 2013 |
| Impact of the mechanical stress on switching characteristics of electrochemical resistive memory S Ambrogio, S Balatti, S Choi, D Ielmini Advanced Materials 26 (23), 3885-3892, 2014 | 122 | 2014 |
| Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory S Balatti, S Ambrogio, Z Wang, S Sills, A Calderoni, N Ramaswamy, ... IEEE Transactions on Electron Devices 62 (10), 3365-3372, 2015 | 120 | 2015 |
| Complementary switching in metal oxides: Toward diode-less crossbar RRAMs F Nardi, S Balatti, S Larentis, D Ielmini 2011 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2011 | 110 | 2011 |
| A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems Z Wang, S Ambrogio, S Balatti, D Ielmini Frontiers in neuroscience 8, 438, 2015 | 109 | 2015 |
| Normally-off logic based on resistive switches—Part I: Logic gates S Balatti, S Ambrogio, D Ielmini IEEE transactions on Electron Devices 62 (6), 1831-1838, 2015 | 94 | 2015 |
| Understanding switching variability and random telegraph noise in resistive RAM S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini 2013 IEEE International Electron Devices Meeting, 31.5. 1-31.5. 4, 2013 | 90 | 2013 |
| Set variability and failure induced by complementary switching in bipolar RRAM S Balatti, S Ambrogio, DC Gilmer, D Ielmini IEEE electron device letters 34 (7), 861-863, 2013 | 86 | 2013 |
| Noise-induced resistance broadening in resistive switching memory—Part II: Array statistics S Ambrogio, S Balatti, V McCaffrey, DC Wang, D Ielmini IEEE Transactions on Electron Devices 62 (11), 3812-3819, 2015 | 74 | 2015 |
