High-power 200 fs Kerr-lens mode-locked Yb: YAG thin-disk oscillator O Pronin, J Brons, C Grasse, V Pervak, G Boehm, MC Amann, ...
Optics letters 36 (24), 4746-4748, 2011
194 2011 Surface micromachined tunable 1.55 μm-VCSEL with 102 nm continuous single-mode tuning C Gierl, T Gruendl, P Debernardi, K Zogal, C Grasse, HA Davani, G Böhm, ...
Optics express 19 (18), 17336-17343, 2011
154 2011 Terahertz sources based on Čerenkov difference-frequency generation in quantum cascade lasers K Vijayraghavan, RW Adams, A Vizbaras, M Jang, C Grasse, G Boehm, ...
Applied Physics Letters 100 (25), 2012
144 2012 Long-wavelength high-contrast grating vertical-cavity surface-emitting laser W Hofmann, C Chase, M Müller, Y Rao, C Grasse, G Böhm, MC Amann, ...
IEEE Photonics Journal 2 (3), 415-422, 2010
74 2010 Type-II InP-based lasers emitting at 2.55 μm S Sprengel, A Andrejew, K Vizbaras, T Gruendl, K Geiger, G Boehm, ...
Applied Physics Letters 100 (4), 2012
57 2012 High-power Kerr-lens mode-locked Yb: YAG thin-disk oscillator in the positive dispersion regime O Pronin, J Brons, C Grasse, V Pervak, G Boehm, MC Amann, ...
Optics letters 37 (17), 3543-3545, 2012
51 2012 InP-based type-II quantum-well lasers and LEDs S Sprengel, C Grasse, P Wiecha, A Andrejew, T Gruendl, G Boehm, ...
IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1900909-1900909, 2013
50 2013 Record single-mode, high-power VCSELs by inhibition of spatial hole burning T Gruendl, P Debernardi, M Mueller, C Grasse, P Ebert, K Geiger, ...
IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1700913-1700913, 2013
47 2013 Up to 3 μm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells S Sprengel, C Grasse, K Vizbaras, T Gruendl, MC Amann
Applied Physics Letters 99 (22), 2011
33 2011 1.3 µm short-cavity VCSELs enabling error-free transmission at 25 Gbit/s over 25 km fibre link M Müller, P Wolf, C Grasse, MPI Dias, M Ortsiefer, G Böhm, E Wong, ...
Electronics letters 48 (23), 1487-1489, 2012
27 2012 Room-temperature type-I GaSb-based lasers in the 3.0-3.7 μm wavelength range K Vizbaras, A Vizbaras, A Andrejew, C Grasse, S Sprengel, MC Amann
Novel In-Plane Semiconductor Lasers XI 8277, 184-190, 2012
26 2012 InP-based 2.8–3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures C Grasse, P Wiecha, T Gruendl, S Sprengel, R Meyer, MC Amann
Applied Physics Letters 101 (22), 2012
24 2012 1.3 μm high-power short-cavity VCSELs for high-speed applications M Müller, C Grasse, K Saller, T Gründl, G Böhm, M Ortsiefer, MC Amann
CLEO: Science and Innovations, CW3N. 2, 2012
22 2012 Energy-efficient 1.3 μm short-cavity VCSELs for 30 Gb/s error-free optical links M Müller, P Wolf, T Gründl, C Grasse, J Rosskopf, W Hofmann, D Bimberg, ...
ISLC 2012 International Semiconductor Laser Conference, 1-2, 2012
20 2012 InP-based 1.3 μm and 1.55 μm short-cavity VCSELs suitable for telecom-and datacom-applications M Müller, C Grasse, MC Amann
2012 14th International Conference on Transparent Optical Networks (ICTON), 1-4, 2012
20 * 2012 Empirical modeling of the refractive index for (AlGaIn) As lattice matched to InP C Grasse, G Boehm, M Mueller, T Gruendl, R Meyer, MC Amann
Semiconductor science and technology 25 (4), 045018, 2010
20 2010 Continuously Tunable, Polarization Stable SWG MEMS VCSELs at 1.55 T Gründl, K Zogal, P Debernardi, M Müller, C Grasse, K Geiger, R Meyer, ...
IEEE Photonics Technology Letters 25 (9), 841-843, 2013
19 2013 Tuneable VCSEL aiming for the application in interconnects and short haul systems C Gierl, K Zogal, S Jatta, HA Davani, F Küppers, P Meissner, T Gründl, ...
Optical Metro Networks and Short-Haul Systems III 7959, 54-66, 2011
19 2011 GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3 μm light emission grown on InP substrate C Grasse, T Gruendl, S Sprengel, P Wiecha, K Vizbaras, R Meyer, ...
Journal of crystal growth 370, 240-243, 2013
16 2013 Room-Temperature A Vizbaras, M Anders, S Katz, C Grasse, G Boehm, R Meyer, MA Belkin, ...
IEEE Journal of Quantum Electronics 47 (5), 691-697, 2011
15 2011 