Molecular beam epitaxial growth of high quality InSb E Michel, G Singh, S Slivken, C Besikci, P Bove, I Ferguson, M Razeghi
Applied physics letters 65 (26), 3338-3340, 1994
81 1994 Extended wavelength SWIR InGaAs focal plane array: Characteristics and limitations Y Arslan, F Oguz, C Besikci
Infrared Physics & Technology 70, 134-137, 2015
74 2015 Anomalous Hall effect in InSb layers grown by metalorganic chemical vapor deposition on GaAs substrates C Besikci, YH Choi, R Sudharsanan, M Razeghi
Journal of applied physics 73 (10), 5009-5013, 1993
68 1993 Growth of In1−x Tlx Sb, a new infrared material, by low‐pressure metalorganic chemical vapor deposition YH Choi, C Besikci, R Sudharsanan, M Razeghi
Applied physics letters 63 (3), 361-363, 1993
62 1993 Detailed analysis of carrier transport in InAs0.3 Sb0.7 layers grown on GaAs substrates by metalorganic chemical‐vapor deposition C Besikci, YH Choi, G Labeyrie, E Bigan, M Razeghi, JB Cohen, ...
Journal of applied physics 76 (10), 5820-5828, 1994
53 1994 Detailed investigation of electron transport, capture and gain in Al0. 3Ga0. 7As/GaAs quantum well infrared photodetectors OO Cellek, C Besikci
Semiconductor science and technology 19 (2), 183, 2003
49 2003 High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance OO Cellek, S Ozer, C Besikci
IEEE journal of quantum electronics 41 (7), 980-985, 2005
41 2005 Numerical analysis of long wavelength infrared HgCdTe photodiodes H Kocer, Y Arslan, C Besikci
Infrared Physics & Technology 55 (1), 49-55, 2012
38 2012 Assessment of InSb photodetectors on Si substrates S Ozer, C Besikci
Journal of Physics D: Applied Physics 36 (5), 559, 2003
38 2003 Extended short wavelength infrared FPA technology: status and trends C Besikci
Quantum Sensing and Nano Electronics and Photonics XV 10540, 110-125, 2018
37 2018 Large-format voltage-tunable dual-band quantum-well infrared photodetector focal plane array for third-generation thermal imagers SU Eker, M Kaldirim, Y Arslan, C Besikci
IEEE Electron Device Letters 29 (10), 1121-1123, 2008
37 2008 Extended Short Wavelength Infrared In0.83 Ga0.17 As Focal Plane ArrayY Arslan, F Oguz, C Besikci
IEEE Journal of Quantum Electronics 50 (12), 957-964, 2014
36 2014 Gain and transient photoresponse of quantum well infrared photodetectors: a detailed ensemble Monte Carlo study OO Cellek, S Memis, U Bostanci, S Ozer, C Besikci
Physica E: Low-dimensional Systems and Nanostructures 24 (3-4), 318-327, 2004
33 2004 Characteristics of InAs0. 8Sb0. 2 photodetectors on GaAs substrates C Besikci, S Ozer, C Van Hoof, L Zimmermann, J John, P Merken
Semiconductor science and technology 16 (12), 992, 2001
33 2001 Electron transport properties of Ga/sub 0.51/In/sub 0.49/P for device applications C Besikci, M Razeghi
IEEE transactions on electron devices 41 (6), 1066-1069, 2002
30 2002 Demonstration and performance assessment of large format InP–InGaAsP quantum-well infrared photodetector focal plane array S Ozer, U Tumkaya, B Asici, C Besikci
IEEE journal of quantum electronics 43 (8), 709-713, 2007
28 2007 Lattice-matched AlInAs–InGaAs mid-wavelength infrared QWIPs: characteristics and focal plane array performance M Kaldirim, Y Arslan, SU Eker, C Besikci
Semiconductor science and technology 23 (8), 085007, 2008
25 2008 Large format voltage tunable dual-band QWIP FPAs Y Arslan, SU Eker, M Kaldirim, C Besikci
Infrared physics & technology 52 (6), 399-402, 2009
23 2009 Large format AlInAs–InGaAs quantum-well infrared photodetector focal plane array for midwavelength infrared thermal imaging S Ozer, U Tumkaya, C Besikci
IEEE Photonics Technology Letters 19 (18), 1371-1373, 2007
22 2007 InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy A Tevke, C Besikci, C Van Hoof, G Borghs
Solid-State Electronics 42 (6), 1039-1044, 1998
22 1998