| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 188 | 2022 |
| Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles AJ Tan, YH Liao, LC Wang, N Shanker, JH Bae, C Hu, S Salahuddin IEEE Electron Device Letters 42 (7), 994-997, 2021 | 159 | 2021 |
| One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon SS Cheema, N Shanker, CH Hsu, A Datar, J Bae, D Kwon, S Salahuddin Advanced Electronic Materials 8 (6), 2100499, 2022 | 100 | 2022 |
| Emerging memory technologies for neuromorphic computing CH Kim, S Lim, SY Woo, WM Kang, YT Seo, ST Lee, S Lee, D Kwon, S Oh, ... Nanotechnology 30 (3), 032001, 2018 | 92 | 2018 |
| Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices S Lim, JH Bae, JH Eum, S Lee, CH Kim, D Kwon, BG Park, JH Lee Neural Computing and Applications 31, 8101-8116, 2019 | 89 | 2019 |
| Demonstration of unsupervised learning with spike-timing-dependent plasticity using a TFT-type NOR flash memory array CH Kim, S Lee, SY Woo, WM Kang, S Lim, JH Bae, J Kim, JH Lee IEEE Transactions on Electron Devices 65 (5), 1774-1780, 2018 | 73 | 2018 |
| High-density and near-linear synaptic device based on a reconfigurable gated Schottky diode JH Bae, S Lim, BG Park, JH Lee IEEE Electron Device Letters 38 (8), 1153-1156, 2017 | 63 | 2017 |
| Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors JH Bae, D Kwon, N Jeon, S Cheema, AJ Tan, C Hu, S Salahuddin IEEE Electron Device Letters 41 (11), 1637-1640, 2020 | 57 | 2020 |
| On-chip training spiking neural networks using approximated backpropagation with analog synaptic devices D Kwon, S Lim, JH Bae, ST Lee, H Kim, YT Seo, S Oh, J Kim, K Yeom, ... Frontiers in neuroscience 14, 423, 2020 | 54 | 2020 |
| High-density and highly-reliable binary neural networks using NAND flash memory cells as synaptic devices ST Lee, H Kim, JH Bae, H Yoo, NY Choi, D Kwon, S Lim, BG Park, JH Lee 2019 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2019 | 52 | 2019 |
| Observation of physisorption in a high-performance FET-type oxygen gas sensor operating at room temperature S Hong, J Shin, Y Hong, M Wu, D Jang, Y Jeong, G Jung, JH Bae, ... Nanoscale 10 (37), 18019-18027, 2018 | 51 | 2018 |
| Hot electrons as the dominant source of degradation for sub-5nm HZO FeFETs AJ Tan, M Pešić, L Larcher, YH Liao, LC Wang, JH Bae, C Hu, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 50 | 2020 |
| Improved CO gas detection of Si MOSFET gas sensor with catalytic Pt decoration and pre-bias effect S Hong, Y Hong, Y Jeong, G Jung, W Shin, J Park, JK Lee, D Jang, ... Sensors and Actuators B: Chemical 300, 127040, 2019 | 48 | 2019 |
| Reconfigurable field-effect transistor as a synaptic device for XNOR binary neural network JH Bae, H Kim, D Kwon, S Lim, ST Lee, BG Park, JH Lee IEEE Electron Device Letters 40 (4), 624-627, 2019 | 46 | 2019 |
| Effects of high-pressure annealing on the low-frequency noise characteristics in ferroelectric FET W Shin*, JH Bae*, S Kim, K Lee, D Kwon, BG Park, D Kwon, JH Lee IEEE Electron Device Letters 43 (1), 13-16, 2021 | 45 | 2021 |
| A split-gate positive feedback device with an integrate-and-fire capability for a high-density low-power neuron circuit KB Choi, SY Woo, WM Kang, S Lee, CH Kim, JH Bae, S Lim, JH Lee Frontiers in neuroscience 12, 704, 2018 | 42 | 2018 |
| Comparison of the characteristics of semiconductor gas sensors with different transducers fabricated on the same substrate G Jung, W Shin, S Hong, Y Jeong, J Park, D Kim, JH Bae, BG Park, ... Sensors and Actuators B: Chemical 335, 129661, 2021 | 41 | 2021 |
| Adaptive weight quantization method for nonlinear synaptic devices D Kwon, S Lim, JH Bae, ST Lee, H Kim, CH Kim, BG Park, JH Lee IEEE Transactions on Electron Devices 66 (1), 395-401, 2018 | 41 | 2018 |
| Proposition of deposition and bias conditions for optimal signal-to-noise-ratio in resistor-and FET-type gas sensors W Shin, G Jung, S Hong, Y Jeong, J Park, D Kim, D Jang, D Kwon, ... Nanoscale 12 (38), 19768-19775, 2020 | 39 | 2020 |
| Operation scheme of multi-layer neural networks using NAND flash memory as high-density synaptic devices ST Lee, S Lim, NY Choi, JH Bae, D Kwon, BG Park, JH Lee IEEE Journal of the Electron Devices Society 7, 1085-1093, 2019 | 38 | 2019 |
Jong-Ho LeeDepartment of Electrical and Computer Engineering, Seoul National UniversityDirección de correo verificada de snu.ac.kr
