Measurements of the effective mass and scattering times of composite fermions from magnetotransport analysis DR Leadley, RJ Nicholas, CT Foxon, JJ Harris Physical review letters 72 (12), 1906, 1994 | 234 | 1994 |
Intersubband resonant scattering in GaAs-Ga 1− x Al x As heterojunctions DR Leadley, R Fletcher, RJ Nicholas, F Tao, CT Foxon, JJ Harris Physical Review B 46 (19), 12439, 1992 | 134 | 1992 |
Ohmic contacts to n-type germanium with low specific contact resistivity K Gallacher, P Velha, DJ Paul, I MacLaren, M Myronov, DR Leadley Applied Physics Letters 100 (2), 2012 | 123 | 2012 |
Fractional quantum Hall effect measurements at zero g factor DR Leadley, RJ Nicholas, DK Maude, AN Utjuzh, JC Portal, JJ Harris, ... Physical review letters 79 (21), 4246, 1997 | 122 | 1997 |
Critical collapse of the exchange-enhanced spin splitting in two-dimensional systems DR Leadley, RJ Nicholas, JJ Harris, CT Foxon Physical Review B 58 (19), 13036, 1998 | 115 | 1998 |
Ultra-high hole mobility exceeding one million in a strained germanium quantum well A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ... Applied Physics Letters 101 (17), 2012 | 109 | 2012 |
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley Applied Physics Letters 93 (19), 2008 | 108 | 2008 |
Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm RE Warburton, G Intermite, M Myronov, P Allred, DR Leadley, K Gallacher, ... IEEE Transactions on Electron Devices 60 (11), 3807-3813, 2013 | 106 | 2013 |
Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates VA Shah, A Dobbie, M Myronov, DR Leadley Journal of Applied Physics 107 (6), 2010 | 103 | 2010 |
Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 2013 | 98 | 2013 |
High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate VA Shah, A Dobbie, M Myronov, DR Leadley Solid-State Electronics 62 (1), 189-194, 2011 | 82 | 2011 |
Cyclotron phonon emission and electron energy loss rates in GaAs-GaAlAs heterojunctions DR Leadley, RJ Nicholas, JJ Harris, CT Foxon Semiconductor science and technology 4 (10), 879, 1989 | 80 | 1989 |
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ... Optics letters 36 (21), 4158-4160, 2011 | 73 | 2011 |
Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well MA Zudov, OA Mironov, QA Ebner, PD Martin, Q Shi, DR Leadley Physical Review B 89 (12), 125401, 2014 | 63 | 2014 |
Spin transport in germanium at room temperature C Shen, T Trypiniotis, KY Lee, SN Holmes, R Mansell, M Husain, V Shah, ... Applied Physics Letters 97 (16), 2010 | 63 | 2010 |
Application of Bryan’s algorithm to the mobility spectrum analysis of semiconductor devices D Chrastina, JP Hague, DR Leadley Journal of applied physics 94 (10), 6583-6590, 2003 | 62 | 2003 |
Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas C Morrison, P Wiśniewski, SD Rhead, J Foronda, DR Leadley, M Myronov Applied Physics Letters 105 (18), 2014 | 61 | 2014 |
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001) VA Shah, A Dobbie, M Myronov, DR Leadley Thin Solid Films 519 (22), 7911-7917, 2011 | 57 | 2011 |
Influence of acoustic phonons on inter-subband scattering in GaAs-GaAlAs heterojunctions DR Leadley, RJ Nicholas, JJ Harris, CT Foxon Semiconductor science and technology 4 (10), 885, 1989 | 51 | 1989 |
Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents AJ Matthews, KV Kavokin, A Usher, ME Portnoi, M Zhu, JD Gething, ... Physical Review B—Condensed Matter and Materials Physics 70 (7), 075317, 2004 | 50 | 2004 |