CMOS small-signal and thermal noise modeling at high frequencies A Antonopoulos, M Bucher, K Papathanasiou, N Mavredakis, N Makris, ...
IEEE transactions on electron devices 60 (11), 3726-3733, 2013
47 2013 Compact modeling technology for the simulation of integrated circuits based on graphene field‐effect transistors F Pasadas, PC Feijoo, N Mavredakis, A Pacheco‐Sanchez, FA Chaves, ...
Advanced Materials 34 (48), 2201691, 2022
30 2022 Improved metal-graphene contacts for low-noise, high-density microtransistor arrays for neural sensing N Schaefer, R Garcia-Cortadella, A Bonaccini Calia, N Mavredakis, X Illa, ...
Carbon, 2020
27 2020 Understanding the Bias Dependence of Low Frequency Noise in Single Layer Graphene FETs N Mavredakis, R Garcia Cortadella, A Bonaccini Calia, JA Garrido, ...
Nanoscale, 14947-14956, 2018
26 2018 Measurement and modelling of 1/f noise in 180 nm NMOS and PMOS devices N Mavredakis, A Antonopoulos, M Bucher
Proceedings of Papers 5th European Conference on Circuits and Systems for …, 2010
20 2010 Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors A Pacheco-Sanchez, N Mavredakis, PC Feijoo, W Wei, E Pallecchi, ...
IEEE Transactions on Electron Devices 67 (12), 5790-5796, 2020
19 2020 Velocity saturation effect on low frequency noise in short channel single layer graphene field effect transistors N Mavredakis, W Wei, E Pallecchi, D Vignaud, H Happy, ...
ACS Applied Electronic Materials 1 (12), 2626-2636, 2019
18 2019 Charge-Based Compact Model for Bias-Dependent Variability of 1/ N Mavredakis, N Makris, P Habas, M Bucher
IEEE Transactions on Electron Devices 63 (11), 4201-4208, 2016
15 2016 Low-frequency noise parameter extraction method for single-layer graphene FETs N Mavredakis, W Wei, E Pallecchi, D Vignaud, H Happy, RG Cortadella, ...
IEEE transactions on electron devices 67 (5), 2093-2099, 2020
12 2020 An extraction method for mobility degradation and contact resistance of graphene transistors A Pacheco-Sanchez, N Mavredakis, PC Feijoo, D Jiménez
IEEE Transactions on Electron Devices 69 (7), 4037-4041, 2022
9 2022 Analog/RF figures of merit of advanced DG MOSFETs RK Sharma, A Antonopoulos, N Mavredakis, M Bucher
2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012
9 2012 Bias dependence of low frequency noise in 90nm CMOS N Mavredakis, A Antonopoulos, M Bucher
Proc. NSTI-Nanotech/Microtech 2, 805-808, 2010
8 2010 Variability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETs M Bucher, A Nikolaou, N Mavredakis, N Makris, M Coustans, J Lolivier, ...
2017 International Conference of Microelectronic Test Structures (ICMTS), 1-4, 2017
7 2017 Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs ES Nikolaos Mavredakis, Matthias Bucher, Roland
Electron Devices, IEEE Transactions on 60 (2), 2013
7 * 2013 Inversion-coefficient based design of RF CMOS low-noise amplifiers N Mavredakis, M Bucher
2006 13th IEEE International Conference on Electronics, Circuits and Systems …, 2006
7 2006 A scalable compact model for the static drain current of graphene FETs N Mavredakis, A Pacheco-Sanchez, O Txoperena, E Torres, D Jiménez
IEEE Transactions on Electron Devices 71 (1), 853-859, 2023
5 2023 Straightforward bias-and frequency-dependent small-signal model extraction for single-layer graphene FETs N Mavredakis, A Pacheco-Sanchez, W Wei, E Pallecchi, H Happy, ...
Microelectronics Journal 133, 105715, 2023
5 2023 Bias-dependent intrinsic RF thermal noise modeling and characterization of single-layer graphene FETs N Mavredakis, A Pacheco-Sanchez, P Sakalas, W Wei, E Pallecchi, ...
IEEE Transactions on Microwave Theory and Techniques 69 (11), 4639-4646, 2021
5 2021 Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs N Mavredakis, RG Cortadella, X Illa, N Schaefer, AB Calia, ...
Nanoscale Advances 2 (11), 5450-5460, 2020
5 2020 Charge-based compact model for bias-dependent variability of 1 N Mavredakis, N Makris, P Habas, M Bucher
IEEE Trans. Electron Devices 63 (11), 4201-4208, 2016
5 2016 