| Basic principles of STT-MRAM cell operation in memory arrays AV Khvalkovskiy, D Apalkov, S Watts, R Chepulskii, RS Beach, A Ong, ... Journal of Physics D: Applied Physics 46 (7), 074001, 2013 | 798 | 2013 |
| Magnetoresistive random access memory D Apalkov, B Dieny, JM Slaughter Proceedings of the IEEE 104 (10), 1796-1830, 2016 | 619 | 2016 |
| Spin-transfer torque magnetic random access memory (STT-MRAM) D Apalkov, A Khvalkovskiy, S Watts, V Nikitin, X Tang, D Lottis, K Moon, ... ACM Journal on Emerging Technologies in Computing Systems (JETC) 9 (2), 1-35, 2013 | 577 | 2013 |
| Advances and future prospects of spin-transfer torque random access memory E Chen, D Apalkov, Z Diao, A Driskill-Smith, D Druist, D Lottis, V Nikitin, ... IEEE Transactions on Magnetics 46 (6), 1873-1878, 2010 | 521 | 2010 |
| Matching domain-wall configuration and spin-orbit torques for efficient domain-wall motion AV Khvalkovskiy, V Cros, D Apalkov, V Nikitin, M Krounbi, KA Zvezdin, ... Physical Review B—Condensed Matter and Materials Physics 87 (2), 020402, 2013 | 479 | 2013 |
| Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers Z Diao, D Apalkov, M Pakala, Y Ding, A Panchula, Y Huai Applied Physics Letters 87 (23), 2005 | 297 | 2005 |
| Spin transfer switching in dual MgO magnetic tunnel junctions Z Diao, A Panchula, Y Ding, M Pakala, S Wang, Z Li, D Apalkov, H Nagai, ... Applied Physics Letters 90 (13), 2007 | 233 | 2007 |
| Spin-torque switching: Fokker-Planck rate calculation DM Apalkov, PB Visscher Physical Review B—Condensed Matter and Materials Physics 72 (18), 180405, 2005 | 199 | 2005 |
| Perpendicular spin torques in magnetic tunnel junctions Z Li, S Zhang, Z Diao, Y Ding, X Tang, DM Apalkov, Z Yang, K Kawabata, ... Physical Review Letters 100 (24), 246602, 2008 | 174 | 2008 |
| Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction AV Khvalkovskiy, D Apalkov US Patent 9,076,537, 2015 | 164 | 2015 |
| Method and system for providing a spin transfer device with improved switching characteristics D Apalkov, Z Li US Patent 7,486,552, 2009 | 159 | 2009 |
| Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled E Chen, D Apalkov US Patent 7,800,942, 2010 | 151 | 2010 |
| Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions R Chepulskyy, X Tang, D Apalkov, AV Khvalkovskiy, V Nikitin, MT Krounbi US Patent 9,130,155, 2015 | 138 | 2015 |
| Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements D Apalkov, Y Huai US Patent App. 11/185,507, 2007 | 123 | 2007 |
| Latest advances and roadmap for in-plane and perpendicular STT-RAM A Driskill-Smith, D Apalkov, V Nikitin, X Tang, S Watts, D Lottis, K Moon, ... 2011 3rd IEEE International Memory Workshop (IMW), 1-3, 2011 | 110 | 2011 |
| Magnetic elements having a bias field and magnetic memory devices using the magnetic elements Y Huai, D Apalkov US Patent 7,518,835, 2009 | 93 | 2009 |
| Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells D Apalkov, Z Diao, Y Ding, Y Huai US Patent App. 11/251,428, 2007 | 90 | 2007 |
| Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices AV Khvalkovskiy, D Apalkov, V Nikitin, MT Krounbi US Patent 9,076,954, 2015 | 66 | 2015 |
| Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation D Apalkov, S Watts, A Driskill-Smith, E Chen, Z Diao, V Nikitin IEEE transactions on magnetics 46 (6), 2240-2243, 2010 | 66 | 2010 |
| Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions AV Khvalkovskiy, D Apalkov, MT Krounbi US Patent 9,105,830, 2015 | 65 | 2015 |
Vladimir NikitinSamsung Semiconductor Inc.Dirección de correo verificada de samsung.com
