Degradation of hexagonal silicon-carbide-based bipolar devices M Skowronski, S Ha
Journal of applied physics 99 (1), 2006
559 2006 Determination of wurtzite GaN lattice polarity based on surface reconstruction AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Applied physics letters 72 (17), 2114-2116, 1998
407 1998 Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ...
Applied physics letters 66 (10), 1252-1254, 1995
378 1995 Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER …, 1998
320 1998 Dislocation conversion in 4H silicon carbide epitaxy S Ha, P Mieszkowski, M Skowronski, LB Rowland
Journal of Crystal Growth 244 (3-4), 257-266, 2002
295 2002 Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ...
Applied physics letters 67 (16), 2284-2286, 1995
288 1995 Intracenter transitions in the dominant deep level (EL2) in GaAs M Kaminska, M Skowronski, J Lagowski, JM Parsey, HC Gatos
Applied physics letters 43 (3), 302-304, 1983
254 1983 Lifetime-limiting defects in n− 4H-SiC epilayers PB Klein, BV Shanabrook, SW Huh, AY Polyakov, M Skowronski, ...
Applied Physics Letters 88 (5), 2006
249 2006 Identification of the 0.82-eV Electron Trap, M Kamińska, M Skowroński, W Kuszko
Physical review letters 55 (20), 2204, 1985
232 1985 Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions JQ Liu, M Skowronski, C Hallin, R Söderholm, H Lendenmann
Applied physics letters 80 (5), 749-751, 2002
213 2002 Semi‐insulating 6H–SiC grown by physical vapor transport HMD Hobgood, RC Glass, G Augustine, RH Hopkins, J Jenny, ...
Applied physics letters 66 (11), 1364-1366, 1995
186 1995 Structural instability of 4H–SiC polytype induced by n -type doping JQ Liu, HJ Chung, T Kuhr, Q Li, M Skowronski
Applied physics letters 80 (12), 2111-2113, 2002
173 2002 The mechanism of micropipe nucleation at inclusions in silicon carbide M Dudley, XR Huang, W Huang, A Powell, S Wang, P Neudeck, ...
Applied physics letters 75 (6), 784-786, 1999
171 1999 GaN (0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Surface science 423 (1), 70-84, 1999
168 1999 Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing TA Kuhr, JQ Liu, HJ Chung, M Skowronski, F Szmulowicz
Journal of applied physics 92 (10), 5863-5871, 2002
163 2002 Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy F Hamdani, M Yeadon, DJ Smith, H Tang, W Kim, A Salvador, ...
Journal of applied physics 83 (2), 983-990, 1998
162 1998 Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching W Jiang, M Noman, YM Lu, JA Bain, PA Salvador, M Skowronski
Journal of Applied Physics 110 (3), 2011
142 2011 Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect J Lagowski, DG Lin, TP Chen, M Skowronski, HC Gatos
Applied physics letters 47 (9), 929-931, 1985
138 1985 Recombination-enhanced defect motion in forward-biased 4H–SiC M Skowronski, JQ Liu, WM Vetter, M Dudley, C Hallin, H Lendenmann
Journal of applied physics 92 (8), 4699-4704, 2002
137 2002 Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2 /TiO2 Devices D Li, AA Sharma, DK Gala, N Shukla, H Paik, S Datta, DG Schlom, ...
ACS applied materials & interfaces 8 (20), 12908-12914, 2016
132 2016 