Jun Tatebayashi

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D.L. Huffaker, Diana Huffaker, Diana L...Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLADirección de correo verificada de uta.edu
Ganesh BalakrishnanProfessor, ECE UNM, Director NM EPSCoRDirección de correo verificada de unm.edu
L. Ralph DawsonResearch Professor of ECE, University of New MexicoDirección de correo verificada de chtm.unm.edu
Jinfa HoKLADirección de correo verificada de kla.com
BAOLAI LIANGUCLADirección de correo verificada de cnsi.ucla.edu
Maya Narayanan KuttyPostdoctoral Research Fellow, Centre for High Technology Materials, University of New MexicoDirección de correo verificada de unm.edu
Satoshi KAKOResearch Scientist at NTT Research Inc.Dirección de correo verificada de ntt-research.com
Guillaume HuyetUniversité Côte d'Azur, CNRS, Institut de Physique de NiceDirección de correo verificada de inphyni.cnrs.fr
Tatsuya UsukiSMatrAnDirección de correo verificada de smatran.org
Toshihiko BabaYokohama National UniversityDirección de correo verificada de ynu.ac.jp

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Jun Tatebayashi

Osaka University

Dirección de correo verificada de mat.eng.osaka-u.ac.jp


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition J Tatebayashi, M Nishioka, Y Arakawa Applied Physics Letters 78 (22), 3469-3471, 2001	354	2001
Room-temperature lasing in a single nanowire with quantum dots J Tatebayashi, S Kako, J Ho, Y Ota, S Iwamoto, Y Arakawa Nature Photonics 9 (8), 501-505, 2015	212	2015
Size, shape, and strain dependence of the factor in self-assembled In(Ga)As quantum dots T Nakaoka, T Saito, J Tatebayashi, Y Arakawa Physical Review B—Condensed Matter and Materials Physics 70 (23), 235337, 2004	159	2004
Low-threshold near-infrared GaAs–AlGaAs core–shell nanowire plasmon laser J Ho, J Tatebayashi, S Sergent, CF Fong, S Iwamoto, Y Arakawa Acs Photonics 2 (1), 165-171, 2015	125	2015
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ... Applied physics letters 89 (16), 2006	114	2006
1.28 μm lasing from stacked InAs∕ GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition J Tatebayashi, N Hatori, M Ishida, H Ebe, M Sugawara, Y Arakawa, ... Applied Physics Letters 86 (5), 2005	81	2005
Narrow photoluminescence linewidth from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor … T Yang, J Tatebayashi, S Tsukamoto, M Nishioka, Y Arakawa Applied physics letters 84 (15), 2817-2819, 2004	81	2004
A nanowire-based plasmonic quantum dot laser J Ho, J Tatebayashi, S Sergent, CF Fong, Y Ota, S Iwamoto, Y Arakawa Nano letters 16 (4), 2845-2850, 2016	80	2016
Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well J Tatebayashi, A Khoshakhlagh, SH Huang, G Balakrishnan, LR Dawson, ... Applied Physics Letters 90 (26), 2007	72	2007
Tuning of -factor in self-assembled In(Ga)As quantum dots through strain engineering T Nakaoka, T Saito, J Tatebayashi, S Hirose, T Usuki, N Yokoyama, ... Physical Review B—Condensed Matter and Materials Physics 71 (20), 205301, 2005	72	2005
Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots P Jayavel, H Tanaka, T Kita, O Wada, H Ebe, M Sugawara, J Tatebayashi, ... Applied physics letters 84 (11), 1820-1822, 2004	72	2004
Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids PS Wong, G Balakrishnan, N Nuntawong, J Tatebayashi, DL Huffaker Applied Physics Letters 90 (18), 2007	65	2007
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut S Ichikawa, K Shiomi, T Morikawa, D Timmerman, Y Sasaki, ... Applied Physics Express 14 (3), 031008, 2021	63	2021
Formation and optical characteristics of strain-relieved and densely stacked GaSb∕ GaAs quantum dots J Tatebayashi, A Khoshakhlagh, SH Huang, LR Dawson, G Balakrishnan, ... Applied Physics Letters 89 (20), 2006	63	2006
Area-controlled growth of InAs quantum dots and improvement of density and size distribution J Tatebayashi, M Nishioka, T Someya, Y Arakawa Applied Physics Letters 77 (21), 3382-3384, 2000	63	2000
Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters J Tatebayashi, Y Ota, S Ishida, M Nishioka, S Iwamoto, Y Arakawa Applied Physics Letters 100 (26), 2012	60	2012
Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding T Ide, T Baba, J Tatebayashi, S Iwamoto, T Nakaoka, Y Arakawa Optics express 13 (5), 1615-1620, 2005	59	2005
InAs∕ GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—effects of postgrowth annealing on stacked inas quantum dots J Tatebayashi, Y Arakawa, N Hatori, H Ebe, M Sugawara, H Sudo, ... Applied physics letters 85 (6), 1024-1026, 2004	59	2004
Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemicalvapour deposition J Tatebayashi, N Hatori, H Kakuma, H Ebe, H Sudo, A Kuramata, ... Electronics Letters 39 (15), 1130-1131, 2003	59	2003
Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices J Tatebayashi, N Nuntawong, PS Wong, YC Xin, LF Lester, DL Huffaker Journal of Physics D: Applied Physics 42 (7), 073002, 2009	57	2009

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