Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) K Hiramatsu, K Nishiyama, M Onishi, H Mizutani, M Narukawa, ... Journal of Crystal Growth 221 (1-4), 316-326, 2000 | 556 | 2000 |
Recent progress in selective area growth and epitaxial lateral overgrowth of III‐nitrides: effects of reactor pressure in MOVPE growth K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda physica status solidi (a) 176 (1), 535-543, 1999 | 378 | 1999 |
Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy H Miyake, A Motogaito, K Hiramatsu Japanese journal of applied physics 38 (9A), L1000, 1999 | 130 | 1999 |
Buried tungsten metal structure fabricated by epitaxial-lateral-overgrown GaN via low-pressure metalorganic vapor phase epitaxy M Haino, M Yamaguchi, H Miyake, A Motogaito, K Hiramatsu, ... Japanese Journal of Applied Physics 39 (5B), L449, 2000 | 27 | 2000 |
Fabrication of binary diffractive lenses and the application to LED lighting for controlling luminosity distribution A Motogaito, K Hiramatsu Optics and Photonics Journal 3 (1), 67-73, 2013 | 26 | 2013 |
Characterization of GaN Based UV‐VUV Detectors in the Range 3.4–25 eV by Using Synchrotron Radiation A Motogaito, K Ohta, K Hiramatsu, Y Ohuchi, K Tadatomo, Y Hamamura, ... physica status solidi (a) 188 (1), 337-340, 2001 | 26 | 2001 |
Characterization of GaN-based Schottky barrier ultraviolet (UV) detectors in the UV and vacuum ultraviolet (VUV) region using synchrotron radiation A Motogaito, M Yamaguchi, K Hiramatsu, M Kotoh, Y Ohuchi, K Tadatomo, ... Japanese Journal of Applied Physics 40 (4B), L368, 2001 | 23 | 2001 |
High performance Schottky UV detectors (265–100 nm) using n‐Al0.5Ga0.5N on AlN epitaxial layer H Miyake, H Yasukawa, Y Kida, K Ohta, Y Shibata, A Motogaito, ... physica status solidi (a) 200 (1), 151-154, 2003 | 21 | 2003 |
GaN‐based Schottky barrier photodetectors from near ultraviolet to vacuum ultraviolet (360–50 nm) K Hiramatsu, A Motogaito physica status solidi (a) 195 (3), 496-501, 2003 | 18 | 2003 |
Extraordinary optical transmission exhibited by surface plasmon polaritons in a double-layer wire grid polarizer A Motogaito, Y Morishita, H Miyake, K Hiramatsu Plasmonics 10, 1657-1662, 2015 | 17 | 2015 |
Crystalline and optical properties of ELO GaN by HVPE using tungsten mask K HIRAMATSU, A MOTOGAITO, H MIYAKE, Y HONDA, Y IYECHIKA, ... IEICE transactions on electronics 83 (4), 620-626, 2000 | 15 | 2000 |
Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media A Motogaito, S Nakamura, J Miyazaki, H Miyake, K Hiramatsu Optics Communications 341, 64-68, 2015 | 14 | 2015 |
Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures A Motogaito, R Tanaka, K Hiramatsu Journal of the European Optical Society-Rapid Publications 17, 6, 2021 | 13 | 2021 |
Detecting high-refractive-index media using surface plasmon sensor with one-dimensional metal diffraction grating A Motogaito, S Mito, H Miyake, K Hiramatsu Optics and Photonics Journal 6 (7), 164-170, 2016 | 13 | 2016 |
Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via LP-MOVPE H Miyake, M Yamaguchi, M Haino, A Motogaito, K Hiramatsu, S Nambu, ... MRS Internet Journal of Nitride Semiconductor Research 5, 62-68, 2000 | 12 | 2000 |
Excitation mechanism of surface plasmon polaritons for surface plasmon sensor with 1D metal grating structure for high refractive index medium A Motogaito, Y Ito Photonic Sensors 9, 11-18, 2019 | 9 | 2019 |
Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure A Motogaito, T Nakajima, H Miyake, K Hiramatsu Applied Physics A 123 (12), 729, 2017 | 9 | 2017 |
Fabrication of a binary diffractive lens for controlling the luminous intensity distribution of LED light A Motogaito, N Machida, T Morikawa, K Manabe, H Miyake, K Hiramatsu Optical review 16, 455-457, 2009 | 9 | 2009 |
Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X‐ray (SX) region (10–100 nm) A Motogaito, H Watanabe, K Hiramatsu, K Fukui, Y Hamamura, ... physica status solidi (a) 200 (1), 147-150, 2003 | 9 | 2003 |
2. Growth of Group-III Nitrides-2.4 Epitaxial lateral overgrowth-Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor … K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda Physica Status Solidi-A-Applied Research 176 (1), 535-544, 1999 | 8 | 1999 |