| 2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications Z Lin, A McCreary, N Briggs, S Subramanian, K Zhang, Y Sun, X Li, ... 2D Materials 3 (4), 042001, 2016 | 562 | 2016 |
| A roadmap for electronic grade 2D materials N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ... 2D Materials 6 (2), 022001, 2019 | 296 | 2019 |
| Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping K Zhang, BM Bersch, J Joshi, R Addou, CR Cormier, C Zhang, K Xu, ... Advanced Functional Materials 28 (16), 1706950, 2018 | 208 | 2018 |
| Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy N Briggs, B Bersch, Y Wang, J Jiang, RJ Koch, N Nayir, K Wang, ... Nature materials 19 (6), 637-643, 2020 | 175 | 2020 |
| Epitaxial graphene/silicon carbide intercalation: a minireview on graphene modulation and unique 2D materials N Briggs, ZM Gebeyehu, A Vera, T Zhao, K Wang, ADLF Duran, B Bersch, ... Nanoscale 11 (33), 15440-15447, 2019 | 118 | 2019 |
| Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide K Zhang, BM Bersch, F Zhang, NC Briggs, S Subramanian, K Xu, ... ACS applied materials & interfaces 10 (47), 40831-40837, 2018 | 87 | 2018 |
| Scalable BEOL compatible 2D tungsten diselenide A Kozhakhmetov, JR Nasr, F Zhang, K Xu, NC Briggs, R Addou, ... 2D Materials 7 (1), 015029, 2019 | 65 | 2019 |
| Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides K Zhang, B Jariwala, J Li, NC Briggs, B Wang, D Ruzmetov, RA Burke, ... Nanoscale 10 (1), 336-341, 2018 | 55 | 2018 |
| Two-dimensional tantalum disulfide: controlling structure and properties via synthesis R Zhao, B Grisafe, RK Ghosh, S Holoviak, B Wang, K Wang, N Briggs, ... 2D Materials 5 (2), 025001, 2018 | 49 | 2018 |
| Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation Z Lin, Y Lei, S Subramanian, N Briggs, Y Wang, CL Lo, E Yalon, D Lloyd, ... APL Materials 6 (8), 2018 | 40 | 2018 |
| Unexpected Near-Infrared to Visible Nonlinear Optical Properties from 2-D Polar Metals MA Steves, Y Wang, N Briggs, T Zhao, H El-Sherif, BM Bersch, ... Nano Letters 20 (11), 8312-8318, 2020 | 36 | 2020 |
| Light–Matter Interaction in Quantum Confined 2D Polar Metals K Nisi, S Subramanian, W He, KA Ulman, H El‐Sherif, F Sigger, ... Advanced Functional Materials 31 (4), 2005977, 2021 | 32 | 2021 |
| Synthesis of V-MoS2 Layered Alloys as Stable Li-Ion Battery Anodes Y Lei, K Fujisawa, F Zhang, N Briggs, AR Aref, YT Yeh, Z Lin, ... ACS Applied Energy Materials 2 (12), 8625-8632, 2019 | 27 | 2019 |
| Tuning Transport and Chemical Sensitivity via Niobium Doping of Synthetic MoS2 K Zhang, DD Deng, B Zheng, Y Wang, FK Perkins, NC Briggs, VH Crespi, ... Advanced Materials Interfaces 7 (18), 2000856, 2020 | 25 | 2020 |
| Opportunities in 3-D stacked CMOS transistors M Radosavljević, CY Huang, W Rachmady, SH Seung, NK Thomas, ... 2021 IEEE International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2021 | 20 | 2021 |
| Scalable Characterization of 2D Gallium-Intercalated Epitaxial Graphene H El-Sherif, N Briggs, B Bersch, M Pan, M Hamidinejad, S Rajabpour, ... ACS Applied Materials & Interfaces 13 (46), 55428-55439, 2021 | 15 | 2021 |
| Demonstration of a Stacked CMOS Inverter at 60nm Gate Pitch with Power Via and Direct Backside Device Contacts M Radosavljević, CY Huang, R Galatage, MF Qayyum, JA Wiedemer, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 14 | 2023 |
| 2-dimensional polar metals: a low-frequency Raman scattering study MT Wetherington, F Turker, T Bowen, A Vera, S Rajabpour, N Briggs, ... 2D Materials 8 (4), 041003, 2021 | 12 | 2021 |
| Caveats in obtaining high-quality 2D materials and property characterization S Subramanian, N Briggs, J Shallenberger, MT Wetherington, ... Journal of Materials Research 35 (8), 855-863, 2020 | 11 | 2020 |
| Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates N Briggs, MI Preciado, Y Lu, K Wang, J Leach, X Li, K Xiao, ... Nanotechnology 29 (47), 47LT02, 2018 | 7 | 2018 |
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityDirección de correo verificada de psu.edu