Transcriptome Analysis of the Innate Immunity-Related Complement System in Spleen Tissue of Ctenopharyngodon idella Infected with Aeromonas hydrophila Y Dang, X Xu, Y Shen, M Hu, M Zhang, L Li, L Lv, J Li
PLoS One 11 (7), e0157413, 2016
75 2016 High RF performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology Y Lu, X Ma, L Yang, B Hou, M Mi, M Zhang, J Zheng, H Zhang, Y Hao
IEEE Electron Device Letters 39 (6), 811-814, 2018
61 2018 Complement component 3 (C3): An important role in grass carp (Ctenopharyngodon idella) experimentally exposed to Aeromonas hydrophila X Meng, Y Shen, S Wang, X Xu, Y Dang, M Zhang, L Li, J Zhang, R Wang, ...
Fish & Shellfish Immunology 88, 189-197, 2019
52 2019 Altered functional connectivity between the cerebellum and the cortico-striato-thalamo-cortical circuit in obsessive-compulsive disorder H Zhang, B Wang, K Li, X Wang, X Li, J Zhu, Q Zhao, Y Yang, L Lv, ...
Frontiers in psychiatry 10, 522, 2019
50 2019 AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m H Lu, B Hou, L Yang, X Niu, Z Si, M Zhang, M Wu, M Mi, Q Zhu, K Cheng, ...
IEEE Transactions on Electron Devices 68 (7), 3308-3313, 2021
47 2021 Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region M Mi, XH Ma, L Yang, Y Lu, B Hou, J Zhu, M Zhang, HS Zhang, Q Zhu, ...
IEEE Transactions on Electron Devices 64 (12), 4875-4881, 2017
42 2017 High RF performance GaN-on-Si HEMTs with passivation implanted termination H Lu, B Hou, L Yang, M Zhang, L Deng, M Wu, Z Si, S Huang, X Ma, ...
IEEE Electron Device Letters 43 (2), 188-191, 2021
41 2021 Transcriptome analysis and histopathology of black carp (Mylopharyngodon piceus) spleen infected by Aeromonas hydrophila X Zhang, Y Shen, X Xu, M Zhang, Y Bai, Y Miao, Y Fang, J Zhang, ...
Fish & Shellfish Immunology 83, 330-340, 2018
40 2018 Influence of fin configuration on the characteristics of AlGaN/GaN fin-HEMTs M Zhang, XH Ma, L Yang, M Mi, B Hou, Y He, S Wu, Y Lu, HS Zhang, ...
IEEE Transactions on Electron Devices 65 (5), 1745-1752, 2018
39 2018 A millimeter-wave AlGaN/GaN HEMT fabricated with transitional-recessed-gate technology for high-gain and high-linearity applications S Wu, X Ma, L Yang, M Mi, M Zhang, M Wu, Y Lu, H Zhang, C Yi, Y Hao
IEEE Electron Device Letters 40 (6), 846-849, 2019
38 2019 Comparative study on the morphological characteristics and nutritional quality of largemouth bass (Micropterus salmoides) cultured in an aquaculture system using land-based … S Jia, L Wang, J Zhang, L Zhang, F Ma, M Huang, S Liu, J Gong, M Zhang, ...
Aquaculture 549, 737721, 2022
36 2022 Influence of fin-like configuration parameters on the linearity of AlGaN/GaN HEMTs P Wang, X Ma, M Mi, M Zhang, J Zhu, Y Zhou, S Wu, J Liu, L Yang, B Hou, ...
IEEE Transactions on Electron Devices 68 (4), 1563-1569, 2021
36 2021 Accurate measurement of channel temperature for AlGaN/GaN HEMTs M Wu, XH Ma, L Yang, Q Zhu, M Zhang, LA Yang, Y Hao
IEEE Transactions on Electron Devices 65 (11), 4792-4799, 2018
35 2018 Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge L Yang, M Mi, B Hou, H Zhang, J Zhu, Q Zhu, Y Lu, M Zhang, Y He, ...
IEEE Electron Device Letters 38 (11), 1563-1566, 2017
35 2017 High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si L Yang, M Zhang, B Hou, M Mi, M Wu, Q Zhu, J Zhu, Y Lu, L Chen, X Zhou, ...
IEEE Transactions on Electron Devices 66 (3), 1202-1207, 2019
34 2019 90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application MH Mi, XH Ma, L Yang, BH Bin-Hou, JJ Zhu, YL He, M Zhang, S Wu, ...
Applied Physics Letters 111 (17), 2017
31 2017 Identification, characterization and immunological analysis of Ras related C3 botulinum toxin substrate 1 (Rac1) from grass carp Ctenopharyngodon idella MY Hu, YB Shen, XY Xu, HY Yu, M Zhang, YF Dang, JL Li
Developmental & Comparative Immunology 54 (1), 20-31, 2016
31 2016 The DC performance and RF characteristics of GaN-based HEMTs improvement using graded AlGaN back barrier and Fe/C Co-doped buffer L Yang, B Hou, F Jia, M Zhang, M Wu, X Niu, H Lu, C Shi, M Mi, Q Zhu, ...
IEEE Transactions on Electron Devices 69 (8), 4170-4174, 2022
30 2022 Analysis of low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs for terminal applications Y Zhou, J Zhu, M Mi, M Zhang, P Wang, Y Han, S Wu, J Liu, Q Zhu, ...
IEEE Journal of the Electron Devices Society 9, 756-762, 2021
30 2021 Enhancement-mode AlGaN/GaN nanowire channel high electron mobility transistor with fluorine plasma treatment by ICP Y He, M Mi, C Wang, X Zheng, M Zhang, H Zhang, J Wu, L Yang, P Zhang, ...
IEEE Electron Device Letters 38 (10), 1421-1424, 2017
30 2017 
Xiaohua MaXidian UniversityDirección de correo verificada de xidian.edu.cn