Seth Ariel Tongay

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Junqiao WuProfessor and Chair of Materials Science, University of California, BerkeleyDirección de correo verificada de berkeley.edu
Mark BleiMaterials Science and Engineering & Dept. of Physics, ASUDirección de correo verificada de asu.edu
Ying QinArizona State UniversityDirección de correo verificada de asu.edu
T.TaniguchiNational Institute for Materials ScienceDirección de correo verificada de nims.go.jp
Hui CaiUniversity of California, MercedDirección de correo verificada de ucmerced.edu
Bin ChenResearch Associate Professor, Northwestern UniversityDirección de correo verificada de northwestern.edu
Arthur HebardProfessor of PhysicsDirección de correo verificada de phys.ufl.edu
Emma C. ReganDirección de correo verificada de berkeley.edu
Joonki SuhUNIST | Ulsan National Institute of Science and TechnologyDirección de correo verificada de unist.ac.kr
"Changhyun Ko"Associate Professor, Dept. of Materials Physics, Sookmyung Women's UniversityDirección de correo verificada de sookmyung.ac.kr
Sufei ShiAssociate Professor at Carnegie Mellon UniversityDirección de correo verificada de andrew.cmu.edu
Yuxia ShenArizona State UniversityDirección de correo verificada de asu.edu
A ZettlProfessor of Condensed Matter Physics, UC BerkeleyDirección de correo verificada de physics.berkeley.edu
Kedi WuApplied MaterialsDirección de correo verificada de asu.edu
Can ATACAAssociate ProfessorDirección de correo verificada de umbc.edu
Christian SchneiderCarl von Ossietzky Universität OldenburgDirección de correo verificada de uol.de
Aslıhan Suslu TunaArizona State UniversityDirección de correo verificada de asu.edu
Sijie YangPostdoctoral fellow, Arizona State UniversityDirección de correo verificada de asu.edu
Francois PeetersProfessor of Physics, University of AntwerpDirección de correo verificada de uantwerpen.be
Jun KangAssistant Professor, Beijing Computational Science Research CenterDirección de correo verificada de csrc.ac.cn

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Seth Ariel Tongay

Arizona State University

Dirección de correo verificada de asu.edu - Página principal

Epitaxy quantum materials 2D materials thin-film growth nanoscience


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures X Hong, J Kim, SF Shi, Y Zhang, C Jin, Y Sun, S Tongay, J Wu, Y Zhang, ... Nature nanotechnology 9 (9), 682-686, 2014	2266	2014
Band offsets and heterostructures of two-dimensional semiconductors J Kang, S Tongay, J Zhou, J Li, J Wu Applied Physics Letters 102 (1), 2013	1785	2013
Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe₂ versus MoS₂ S Tongay, J Zhou, C Ataca, K Lo, TS Matthews, J Li, JC Grossman, J Wu Nano letters 12 (11), 5576-5580, 2012	1542	2012
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons S Tongay, J Suh, C Ataca, W Fan, A Luce, JS Kang, J Liu, C Ko, ... Scientific reports 3 (1), 2657, 2013	1210	2013
High Efficiency Graphene Solar Cells by Chemical Doping X Miao, S Tongay, MK Petterson, K Berke, AG Rinzler, BR Appleton, ... Nano letters 12 (6), 2745-2750, 2012	1140	2012
Monolayer behaviour in bulk ReS₂ due to electronic and vibrational decoupling S Tongay, H Sahin, C Ko, A Luce, W Fan, K Liu, J Zhou, YS Huang, ... Nature communications 5 (1), 3252, 2014	1095	2014
Observation of moiré excitons in WSe₂/WS₂ heterostructure superlattices C Jin, EC Regan, A Yan, M Iqbal Bakti Utama, D Wang, S Zhao, Y Qin, ... Nature 567 (7746), 76-80, 2019	1092	2019
Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS₂ and WS₂ Monolayers S Tongay, W Fan, J Kang, J Park, U Koldemir, J Suh, DS Narang, K Liu, ... Nano letters 14 (6), 3185-3190, 2014	868	2014
Mott and generalized Wigner crystal states in WSe₂/WS₂ moiré superlattices EC Regan, D Wang, C Jin, MI Bakti Utama, B Gao, X Wei, S Zhao, W Zhao, ... Nature 579 (7799), 359-363, 2020	855	2020
Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating S Tongay, J Zhou, C Ataca, J Liu, JS Kang, TS Matthews, L You, J Li, ... Nano letters 13 (6), 2831-2836, 2013	852	2013
Excitonic Linewidth Approaching the Homogeneous Limit in -Based van der Waals Heterostructures F Cadiz, E Courtade, C Robert, G Wang, Y Shen, H Cai, T Taniguchi, ... Physical Review X 7 (2), 021026, 2017	786	2017
Doping against the Native Propensity of MoS₂: Degenerate Hole Doping by Cation Substitution J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ... Nano letters 14 (12), 6976-6982, 2014	746	2014
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS₂, WS₂, and Their Bilayer Heterostructures K Liu, Q Yan, M Chen, W Fan, Y Sun, J Suh, D Fu, S Lee, J Zhou, ... Nano letters 14 (9), 5097-5103, 2014	677	2014
Anomalous Raman spectra and thickness-dependent electronic properties of WSe H Sahin, S Tongay, S Horzum, W Fan, J Zhou, J Li, J Wu, FM Peeters Physical Review B—Condensed Matter and Materials Physics 87 (16), 165409, 2013	554	2013
Exciton radiative lifetime in transition metal dichalcogenide monolayers C Robert, D Lagarde, F Cadiz, G Wang, B Lassagne, T Amand, ... Physical review B 93 (20), 205423, 2016	501	2016
Enhanced Light Emission from Large-Area Monolayer MoS₂ Using Plasmonic Nanodisc Arrays S Butun, S Tongay, K Aydin Nano letters 15 (4), 2700-2704, 2015	437	2015
Tuning the Optical, Magnetic, and Electrical Properties of ReSe₂ by Nanoscale Strain Engineering S Yang, C Wang, H Sahin, H Chen, Y Li, SS Li, A Suslu, FM Peeters, ... Nano letters 15 (3), 1660-1666, 2015	434	2015
Scalable enhancement of graphene oxide properties by thermally driven phase transformation PV Kumar, NM Bardhan, S Tongay, J Wu, AM Belcher, JC Grossman Nature chemistry 6 (2), 151-158, 2014	415	2014
Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K S Lee, F Yang, J Suh, S Yang, Y Lee, G Li, H Sung Choe, A Suslu, ... Nature communications 6 (1), 1-7, 2015	410	2015
Rectification at graphene-semiconductor interfaces: zero-gap semiconductor-based diodes S Tongay, M Lemaitre, X Miao, B Gila, BR Appleton, AF Hebard Physical Review X 2 (1), 011002, 2012	396	2012

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