| High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection S Lukman, L Ding, L Xu, Y Tao, AC Riis-Jensen, G Zhang, QYS Wu, ... Nature nanotechnology 15 (8), 675-682, 2020 | 195 | 2020 |
| Exploring low power and ultrafast memristor on p-type van der Waals SnS XF Lu, Y Zhang, N Wang, S Luo, K Peng, L Wang, H Chen, W Gao, ... Nano letters 21 (20), 8800-8807, 2021 | 98 | 2021 |
| Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width Y Kang, S Xu, K Han, EYJ Kong, Z Song, S Luo, A Kumar, C Wang, W Fan, ... Nano letters 21 (13), 5555-5563, 2021 | 38 | 2021 |
| Ultra-low specific contact resistivity (1.4× 10− 9 Ω· cm2) for metal contacts on in-situ Ga-doped Ge0. 95Sn0. 05 film Y Wu, S Luo, W Wang, S Masudy-Panah, D Lei, G Liang, X Gong, YC Yeo Journal of Applied Physics 122 (22), 2017 | 30 | 2017 |
| Time-dependent Landau-Ginzburg equation-based ferroelectric tunnel junction modeling with dynamic response and multi-domain characteristics Z Zhou, L Jiao, J Zhou, Q Kong, S Luo, C Sun, Z Zheng, X Wang, D Zhang, ... IEEE Electron Device Letters 43 (1), 158-161, 2021 | 20 | 2021 |
| Record low specific contact resistivity (1.2×10−9Ω-cm2) for P-type semiconductors: Incorporation of Sn into Ge and in-Situ Ga doping Y Wu, S Luo, W Wang, S Masudy-Panah, D Lei, X Gong, G Liang, YC Yeo 2017 Symposium on VLSI Technology, T218-T219, 2017 | 14 | 2017 |
| Effects of contact placement and Intra/Interlayer interaction in current distribution of black phosphorus Sub-10-nm FET S Luo, KT Lam, B Wang, CH Hsu, W Huang, LZ Yao, A Bansil, H Lin, ... IEEE Transactions on Electron Devices 64 (2), 579-586, 2016 | 9 | 2016 |
| Probabilistic-bits based on ferroelectric field-effect transistors for probabilistic computing S Luo, Y He, B Cai, X Gong, G Liang IEEE Electron Device Letters 44 (8), 1356-1359, 2023 | 8 | 2023 |
| Surface-dominated conductance scaling in Weyl semimetal NbAs S Kumar, YH Tu, S Luo, NA Lanzillo, TR Chang, G Liang, ... npj Computational Materials 10 (1), 84, 2024 | 6 | 2024 |
| Many-body effects-based invertible logic with a simple energy landscape and high accuracy Y He, C Fang, S Luo, G Liang IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 9 …, 2023 | 6 | 2023 |
| Reply to: Detectivities of WS2/HfS2 heterojunctions S Lukman, L Ding, L Xu, Y Tao, AC Riis-Jensen, G Zhang, QS Wu, ... Nature nanotechnology 17 (3), 220-221, 2022 | 6 | 2022 |
| Performance Evaluation and Device Physics Investigation of Negative-Capacitance MOSFETs Based on Ultrathin Body Silicon and Monolayer MoS2 S Luo, X Zhang, G Liang IEEE Transactions on Electron Devices 67 (8), 3049-3055, 2020 | 6 | 2020 |
| Effects of interlayer interaction in van der Waals layered black phosphorus for sub-10 nm FET KT Lam, S Luo, B Wang, CH Hsu, A Bansil, H Lin, G Liang 2015 IEEE International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2015 | 6 | 2015 |
| Record low specific contact resistivity Y Wu, S Luo, W Wang, S Masudy-Panah, D Lei, X Gong Proc. Symp. VLSI Technol., pp. T218-T219, 2017 | 5 | 2017 |
| Ferroelectric probabilistic bits based on thermal noise induced randomness for stochastic computing S Luo, Y He, B Cai, X Gong, G Liang 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 4 | 2023 |
| A Computational Performance Evaluation of Negative-Capacitance MOSFETs based on Ultra-thin body Silicon and Monolayer MoS2 S Luo, X Zhang, G Liang 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020 | 3 | 2020 |
| The stochastic ferroelectric field-effect transistors-based probabilistic-bits: from device physics analysis to invertible logic applications S Luo, Y He, C Fang, B Cai, X Gong, G Liang Japanese Journal of Applied Physics 63 (2), 02SP77, 2024 | 2 | 2024 |
| Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10−10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature G Zheng, Y Wang, H Xu, R Khazaka, L Muehlenbein, S Luo, X Chen, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 2 | 2023 |
| Ultra-low Specific Contact Resistivity (3.2×10-10 Ω-cm2) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping H Xu, X Wang, S Luo, J Zhang, K Han, C Sun, C Wang, R Khazaka, Q Xie, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 2 | 2021 |
| Direct design of ground-state probabilistic logic using many-body interactions for probabilistic computing Y He, S Luo, C Fang, G Liang Scientific reports 14 (1), 15076, 2024 | 1 | 2024 |
Gengchiau LiangNational Yang Ming Chiao Tung UniversityDirección de correo verificada de nycu.edu.tw
