| Structure of GaAs (001)(2× 4)− c (2× 8) determined by scanning tunneling microscopy MD Pashley, KW Haberern, W Friday, JM Woodall, PD Kirchner Physical review letters 60 (21), 2176, 1988 | 668 | 1988 |
| Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy AC Warren, JM Woodall, JL Freeouf, D Grischkowsky, DT McInturff, ... Applied physics letters 57 (13), 1331-1333, 1990 | 616 | 1990 |
| Schottky barriers: An effective work function model JL Freeouf, JM Woodall Applied Physics Letters 39 (9), 727-729, 1981 | 574 | 1981 |
| Macroelectronics: Perspectives on technology and applications RH Reuss, BR Chalamala, A Moussessian, MG Kane, A Kumar, ... Proceedings of the IEEE 93 (7), 1239-1256, 2005 | 447 | 2005 |
| Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area EA Fitzgerald, GP Watson, RE Proano, DG Ast, PD Kirchner, GD Pettit, ... Journal of Applied Physics 65 (6), 2220-2237, 1989 | 394 | 1989 |
| Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures MR Melloch, N Otsuka, JM Woodall, AC Warren, JL Freeouf Applied physics letters 57 (15), 1531-1533, 1990 | 326 | 1990 |
| Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers KP Schoen, JM Woodall, JA Cooper, MR Melloch IEEE Transactions on electron devices 45 (7), 1595-1604, 1998 | 296 | 1998 |
| Unpinned (100) GaAs surfaces in air using photochemistry SD Offsey, JM Woodall, AC Warren, PD Kirchner, TI Chappell, GD Pettit Applied physics letters 48 (7), 475-477, 1986 | 272 | 1986 |
| Ohmic contacts to n‐GaAs using graded band gap layers of Ga1− xInxAs grown by molecular beam epitaxy JM Woodall, JL Freeouf, GD Pettit, T Jackson, P Kirchner Journal of Vacuum Science and Technology 19 (3), 626-627, 1981 | 272 | 1981 |
| Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs RM Feenstra, JM Woodall, GD Pettit Physical review letters 71 (8), 1176, 1993 | 262 | 1993 |
| The effect of fluorescent wavelength shifting on solar cell spectral response HJ Hovel, RT Hodgson, JM Woodall Solar Energy Materials 2 (1), 19-29, 1979 | 257 | 1979 |
| Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ... Journal of applied physics 64 (10), 4843-4852, 1988 | 255 | 1988 |
| Liquid phase-enabled reaction of Al–Ga and Al–Ga–In–Sn alloys with water JT Ziebarth, JM Woodall, RA Kramer, G Choi international journal of hydrogen energy 36 (9), 5271-5279, 2011 | 247 | 2011 |
| Carrier lifetime versus anneal in low temperature growth GaAs ES Harmon, MR Melloch, JM Woodall, DD Nolte, N Otsuka, CL Chang Applied physics letters 63 (16), 2248-2250, 1993 | 245 | 1993 |
| Structure and recombination in InGaAs/GaAs heterostructures EA Fitzgerald, DG Ast, PD Kirchner, GD Pettit, JM Woodall Journal of applied physics 63 (3), 693-703, 1988 | 228 | 1988 |
| EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300° K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY H Rupprecht, JM Woodall, GD Pettit Applied Physics Letters 11 (3), 81-83, 1967 | 215 | 1967 |
| High‐efficiency Ga1−xAlxAs–GaAs solar cells JM Woodall, HJ Hovel Applied Physics Letters 21 (8), 379-381, 1972 | 212 | 1972 |
| An isothermal etchback‐regrowth method for high‐efficiency Ga1− xAlxAs‐GaAs solar cells JM Woodall, HJ Hovel Applied Physics Letters 30 (9), 492-493, 1977 | 210 | 1977 |
| GaAs metallization: Some problems and trends JM Woodall, JL Freeouf Journal of Vacuum Science and Technology 19 (3), 794-798, 1981 | 191 | 1981 |
| Low-temperature grown III-V materials MR Melloch, JM Woodall, ES Harmon, N Otsuka, FH Pollak, DD Nolte, ... Annual Review of Materials Science 25 (1), 547-600, 1995 | 181 | 1995 |