Quantum confinement in Si and Ge nanostructures: Theory and experiment EG Barbagiovanni, DJ Lockwood, PJ Simpson, LV Goncharova
Applied Physics Reviews 1 (1), 2014
269 2014 Quantum confinement in Si and Ge nanostructures EG Barbagiovanni, DJ Lockwood, PJ Simpson, LV Goncharova
Journal of Applied Physics 111 (3), 2012
227 2012 Radiative mechanism and surface modification of four visible deep level defect states in ZnO nanorods EG Barbagiovanni, R Reitano, G Franzò, V Strano, A Terrasi, S Mirabella
Nanoscale 8 (2), 995-1006, 2016
66 2016 Electronic structure study of ion-implanted Si quantum dots in a SiO EG Barbagiovanni, LV Goncharova, PJ Simpson
Physical Review B—Condensed Matter and Materials Physics 83 (3), 035112, 2011
66 2011 Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition EG Barbagiovanni, V Strano, G Franzò, I Crupi, S Mirabella
Applied Physics Letters 106 (9), 2015
50 2015 Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices S Cosentino, EG Barbagiovanni, I Crupi, M Miritello, G Nicotra, C Spinella, ...
Solar Energy Materials and Solar Cells 135, 22-28, 2015
39 2015 Protrusions reduction in 3C-SiC thin film on Si M Zimbone, M Mauceri, G Litrico, EG Barbagiovanni, C Bongiorno, ...
Journal of Crystal Growth 498, 248-257, 2018
36 2018 Flexible organic/inorganic hybrid field-effect transistors with high performance and operational stability AS Dahiya, C Opoku, G Poulin-Vittrant, N Camara, C Daumont, ...
ACS Applied Materials & Interfaces 9 (1), 573-584, 2017
29 2017 Quantum confinement in nonadditive space with a spatially dependent effective mass for Si and Ge quantum wells EG Barbagiovanni, RN Costa Filho
Physica E: Low-dimensional Systems and Nanostructures 63, 14-20, 2014
26 2014 Role of quantum confinement in luminescence efficiency of group IV nanostructures EG Barbagiovanni, DJ Lockwood, NL Rowell, RN Costa Filho, I Berbezier, ...
Journal of Applied Physics 115 (4), 2014
25 2014 The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects S Cosentino, AM Mio, EG Barbagiovanni, R Raciti, R Bahariqushchi, ...
Nanoscale 7 (26), 11401-11408, 2015
21 2015 Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC M Zimbone, EG Barbagiovanni, C Bongiorno, C Calabretta, L Calcagno, ...
Crystal Growth & Design 20 (5), 3104-3111, 2020
19 2020 The role of Zn vacancies in UV sensing with ZnO nanorods EG Barbagiovanni, V Strano, G Franzò, S Mirabella
Applied Physics Letters 109 (14), 2016
18 2016 Universal model for defect-related visible luminescence in ZnO nanorods EG Barbagiovanni, V Strano, G Franzò, R Reitano, AS Dahiya, ...
RSC advances 6 (77), 73170-73175, 2016
17 2016 Use of W-boson longitudinal-transverse interferencein top quark spin-correlation functions CA Nelson, EG Barbagiovanni, JJ Berger, EK Pueschel, JR Wickman
The European Physical Journal C-Particles and Fields 45 (1), 121-138, 2006
17 2006 Influence of interface potential on the effective mass in Ge nanostructures EG Barbagiovanni, S Cosentino, DJ Lockwood, RN Costa Filho, A Terrasi, ...
Journal of Applied Physics 117 (15), 2015
15 2015 Photoluminescence efficiency of germanium dots self-assembled on oxides DJ Lockwood, NL Rowell, EG Barbagiovanni, LV Goncharova, ...
ECS Transactions 53 (1), 185, 2013
14 2013 3C-SiC grown on Si by using a Si1-xGex buffer layer M Zimbone, M Zielinski, EG Barbagiovanni, C Calabretta, F La Via
Journal of Crystal Growth 519, 1-6, 2019
12 2019 Thermal Annealing of high dose P implantation in 4H-SiC C Calabretta, M Zimbone, EG Barbagiovanni, S Boninelli, N Piluso, ...
Materials Science Forum 963, 399-402, 2019
9 2019 High Resolution Investigation of Stacking Fault Density by HRXRD and STEM EG Barbagiovanni, A Alberti, C Bongiorno, E Smecca, M Zimbone, ...
Materials Science Forum 963, 346-349, 2019
6 2019