Biocompatible and long-term monitoring strategies of wearable, ingestible and implantable biosensors: reform the next generation healthcare T Lu, S Ji, W Jin, Q Yang, Q Luo, TL Ren Sensors 23 (6), 2991, 2023 | 75 | 2023 |
Enhanced adhesion and anticorrosion of silk fibroin coated biodegradable Mg-Zn-Ca alloy via a two-step plasma activation H Fang, C Wang, S Zhou, Z Zheng, T Lu, G Li, Y Tian, T Suga Corrosion Science 168, 108466, 2020 | 44 | 2020 |
Low-Temperature Co-hydroxylated Cu/SiO2 Hybrid Bonding Strategy for a Memory-Centric Chip Architecture Q Kang, C Wang, S Zhou, G Li, T Lu, Y Tian, P He ACS Applied Materials & Interfaces 13 (32), 38866-38876, 2021 | 39 | 2021 |
Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress A Yan, C Wang, J Yan, Z Wang, E Zhang, Y Dong, ZY Yan, T Lu, T Cui, ... Advanced Functional Materials 34 (3), 2304409, 2024 | 32 | 2024 |
Polarized tunneling transistor for ultrafast memory J Chen, G Dun, J Hu, Z Lin, Y Wang, T Lu, P Li, T Wei, J Zhu, J Wang, X Li, ... ACS nano 17 (13), 12374-12382, 2023 | 14 | 2023 |
Optimal weight models for ferroelectric synapses toward neuromorphic computing T Lu, X Zhao, H Liu, Z Yan, R Zhao, M Shao, J Yan, M Yang, Y Yang, ... IEEE Transactions on Electron Devices 70 (5), 2297-2303, 2023 | 8 | 2023 |
Perovskite/InGaZnO-based reconfigurable optoelectronic device K Qin, YY Li, G Dun, T Lu, X Geng, C Wang, D Xie, H Tian, Y Yang, ... IEEE Electron Device Letters 43 (11), 1929-1932, 2022 | 4 | 2022 |
Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications MH Shao, RT Zhao, H Liu, WJ Xu, YD Guo, DP Huang, YZ Yang, XR Li, ... Chip, 100101, 2024 | 3 | 2024 |
Ultra-Low Voltage Schmitt Triggers Implemented by HfO2-Based Ferroelectric Field-Effect Transistors R Zhao, H Liu, T Lu, M Shao, X Zhao, Z Yan, Y Yang, TL Ren IEEE Electron Device Letters 43 (7), 1145-1148, 2022 | 3 | 2022 |
Dynamically Tunable Subthermionic Subthreshold Swing and Hysteresis in a Hf0.5Zr0.5O2-Based Ferroelectric Device Unit R Zhao, Z Yan, H Liu, T Lu, X Zhao, M Shao, Y Yang, TL Ren IEEE Transactions on Electron Devices 69 (12), 7102-7106, 2022 | 2 | 2022 |
Two-dimensional fully ferroelectric-gated hybrid computing-in-memory hardware for high-precision and energy-efficient dynamic tracking T Lu, J Xue, P Shen, H Liu, X Gao, X Li, J Hao, D Huang, R Zhao, J Yan, ... Science Advances 10 (36), eadp0174, 2024 | 1 | 2024 |
Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory R Zhao, H Liu, M Yang, T Lu, Z Li, Z Shi, Z Wang, J Liu, Y Yang, TL Ren Nano Letters 24 (35), 10957-10963, 2024 | 1 | 2024 |
Antiferroelectric Negative Capacitance Transistor for Low Power Consumption L Qiao, T Lu, C Song, Y Zhou, R Zhao, Q Wang, TL Ren, F Pan IEEE Electron Device Letters 45 (1), 52-55, 2023 | 1 | 2023 |
All‐in‐one perovskite memristor with tunable photoresponsivity GH Dun, YY Li, HN Zhang, F Wu, XC Tan, K Qin, YC He, ZS Wang, ... InfoMat, e12619, 2024 | | 2024 |
Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors ZY Yan, Z Hou, KH Xue, H Tian, T Lu, J Xue, F Wu, R Zhao, M Shao, ... Advanced Science 10 (34), 2303734, 2023 | | 2023 |
Low-temperature bonding and interfacial failure behavior of Si/glass and glass/glass chips Q Kang, C Wang, S Zhou, T Lu, Y Tian 2020 21st International Conference on Electronic Packaging Technology (ICEPT …, 2020 | | 2020 |