Artículos con órdenes de acceso público - Gang QiuMás información
No disponibles en ningún lugar: 3
Wafer-scale material-device correlation of tellurene MOSFETs
K Xiong, L Li, RJ Marstell, A Madjar, NC Strandwitz, JCM Hwang, G Qiu, ...
2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018
Órdenes: US National Science Foundation, US Department of Defense
RF Characterization on Nb-based Superconducting Silicon Interconnect Fabric for Future Large Scale Quantum Applications
YT Yang, H Ren, SK Chong, G Qiu, SY Ku, Y Cheng, C Hu, T Qian, ...
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC), 949-955, 2022
Órdenes: US National Science Foundation, US Department of Defense
Chemical Exfoliation of Black Phosphorus for Nanoelectronics Applications
M Min, GA Saenz, G Qiu, A Charnas, P Ye, AB Kaul
MRS Advances 2 (60), 3697-3702, 2017
Órdenes: US Department of Defense
Disponibles en algún lugar: 32
Field-effect transistors made from solution-grown two-dimensional tellurene
Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ...
Nature Electronics 1 (4), 228-236, 2018
Órdenes: US National Science Foundation, US Department of Energy, US Department of …
Steep-slope hysteresis-free negative capacitance MoS2 transistors
M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ...
Nature nanotechnology 13 (1), 24-28, 2018
Órdenes: US National Science Foundation, US Department of Defense
A ferroelectric semiconductor field-effect transistor
M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ...
Nature Electronics 2 (12), 580-586, 2019
Órdenes: US National Science Foundation, US Department of Defense
Tellurene: its physical properties, scalable nanomanufacturing, and device applications
W Wu, G Qiu, Y Wang, R Wang, P Ye
Chemical Society Reviews 47 (19), 7203-7212, 2018
Órdenes: US National Science Foundation, US Department of Defense
Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications
J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ...
ACS nano 11 (10), 10222-10229, 2017
Órdenes: US National Science Foundation, US Department of Defense
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
H Zhou, K Maize, G Qiu, A Shakouri, PD Ye
Applied Physics Letters 111 (9), 2017
Órdenes: US Department of Defense
Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes
JK Qin, PY Liao, M Si, S Gao, G Qiu, J Jian, Q Wang, SQ Zhang, S Huang, ...
Nature electronics 3 (3), 141-147, 2020
Órdenes: US National Science Foundation, US Department of Defense
Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene
G Qiu, C Niu, Y Wang, M Si, Z Zhang, W Wu, PD Ye
Nature Nanotechnology 15 (7), 585-591, 2020
Órdenes: US National Science Foundation, US Department of Defense
Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5
G Qiu, Y Du, A Charnas, H Zhou, S Jin, Z Luo, DY Zemlyanov, X Xu, ...
Nano letters 16 (12), 7364-7369, 2016
Órdenes: US National Science Foundation, US Department of Energy
Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene
G Qiu, Y Wang, Y Nie, Y Zheng, K Cho, W Wu, PD Ye
Nano Letters 18 (9), 5760–5767, 2018
Órdenes: US National Science Foundation, US Department of Defense
The resurrection of tellurium as an elemental two-dimensional semiconductor
G Qiu, A Charnas, C Niu, Y Wang, W Wu, PD Ye
npj 2D Materials and Applications 6 (1), 17, 2022
Órdenes: US National Science Foundation, US Department of Defense, Fundação para a …
Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS2 for High‐Performance Photodetectors
JK Qin, G Qiu, W He, J Jian, MW Si, YQ Duan, A Charnas, DY Zemlyanov, ...
Advanced Functional Materials 28 (48), 1806254, 2018
Órdenes: US National Science Foundation, US Department of Defense
Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets
G Jnawali, Y Xiang, SM Linser, IA Shojaei, R Wang, G Qiu, C Lian, ...
Nature communications 11 (1), 3991, 2020
Órdenes: US National Science Foundation, US Department of Energy, US Department of …
Data-driven and probabilistic learning of the process-structure-property relationship in solution-grown tellurene for optimized nanomanufacturing of high-performance …
Y Wang, RSB Ferreira, R Wang, G Qiu, G Li, Y Qin, DY Peide, A Sabbaghi, ...
Nano Energy 57, 480-491, 2019
Órdenes: US National Science Foundation, US Department of Defense
Imaging carrier inhomogeneities in ambipolar tellurene field effect transistors
S Berweger, G Qiu, Y Wang, B Pollard, KL Genter, R Tyrrell-Ead, ...
Nano letters 19 (2), 1289-1294, 2019
Órdenes: US National Science Foundation, US Department of Defense
Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization
C Niu, G Qiu, Y Wang, Z Zhang, M Si, W Wu, PD Ye
Physical Review B 101 (20), 205414, 2020
Órdenes: US National Science Foundation, US Department of Defense
Distinguishing the two-component anomalous hall effect from the topological Hall effect
L Tai, B Dai, J Li, H Huang, SK Chong, KL Wong, H Zhang, P Zhang, ...
ACS nano 16 (10), 17336-17346, 2022
Órdenes: US National Science Foundation, US Department of Energy, US Department of …
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